IP Library Granted Patent US 10,535,623
Granted Patent B2
US 10,535,623 · App. 16/131,401 · Granted Jan 14, 2020

Wire bonding systems and related methods

Inventors: Wentao Qin (Gilbert, AZ); Gordon M. Grivna (Mesa, AZ); Harold Anderson (Chandler, AZ); Thomas Anderson (Chandler, AZ); George Chang (Tempe, AZ)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H01L24/45H01L24/05H01L24/48H01L2224/02166H01L2224/04042H01L2224/05573H01L2224/05624H01L2224/45144H01L2224/45147H01L2224/45565H01L2224/45647H01L2224/48463H01L2224/48507
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Quick Facts
Patent No.
US 10,535,623
App. No.
16/131,401
Granted
Jan 14, 2020
Kind
B2
Abstract

A wire bond system. Implementations may include: a bond wire including copper (Cu), a bond pad including aluminum (Al) and a sacrificial anode electrically coupled with the bond pad, where the sacrificial anode includes one or more elements having a standard electrode potential below a standard electrode potential of Al.

Claims (27)

1. A method for forming a wire bond comprising:

bonding a wire comprising Cu with a bond pad comprising an aluminum alloy; and

electrically coupling a sacrificial anode with the bond pad;

wherein the sacrificial anode does not physically contact the bond pad.

2. The method of claim 1 , wherein the sacrificial anode comprises one of Mg, Hf, Be, or any combination thereof.

3. A method of forming a wire bond comprising:

physically and electrically coupling a sacrificial anode over at least a portion of a bond pad, wherein the bond pad comprises an aluminum alloy; and

forming one of an alloy stack or an intermetallic layer by bonding a wire comprising Cu through the sacrificial anode and to the bond pad.

4. The method of claim 3 , wherein the sacrificial anode comprises one of Mg, Hf, Be, and any combination thereof.

5. The method of claim 3 , wherein the sacrificial anode comprises W.

6. The method of claim 3 , wherein the sacrificial anode comprises Zn.

7. The method of claim 3 , wherein the sacrificial anode comprises Cr.

8. The method of claim 3 , wherein the sacrificial anode comprises Sn.

9. The method of claim 3 , wherein the sacrificial anode comprises one of Mo, Cd, Ni, Co, Fe, Cu, or any combination thereof.

10. The method of claim 3 , wherein the sacrificial anode is entirely over the bond pad.

11. A wire bond system comprising:

a bond wire comprising Cu; and

a bond pad coupled to the bond wire, the bond pad comprising a sacrificial anode;

wherein the sacrificial anode is directly coupled to the bond wire.

12. The system of claim 11 , wherein the sacrificial anode comprises W.

13. The system of claim 11 , wherein the sacrificial anode comprises Zn.

14. The system of claim 11 , wherein the sacrificial anode comprises Cr.

15. The system of claim 11 , wherein the sacrificial anode comprises Sn.

16. The system of claim 11 , wherein the sacrificial anode comprises Fe.

17. The system of claim 11 , wherein the sacrificial anode comprises one of Mo, Cd, Co, Ni, Cu, or any combination thereof.

18. The system of claim 11 , wherein the bond wire comprises a coating comprising one of Au, Ag, Pd, Ni, or any combination thereof.

19. The system of claim 11 , wherein the bond wire further comprises Ni.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 047399, FRAME 0631 Recorded Jun 23, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064078/0001 →
SECURITY INTEREST Recorded Nov 1, 2018
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 047399/0631 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 14, 2018
From: QIN, WENTAO; ANDERSON, HAROLD; ANDERSON, THOMAS; CHANG, GEORGE; GRIVNA, GORDON M.
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 046876/0481 →