Semiconductor substrate supports with embedded RF shield
Exemplary support assemblies may include a top puck defining a substrate support surface, where the top puck is also characterized by a height. The assemblies may include a stem coupled with the top puck on a second surface of the top puck opposite the substrate support surface. The assemblies may include an RF electrode embedded within the top puck proximate the substrate support surface. The assemblies may include a heater embedded within the top puck. The assemblies may also include a ground shield embedded within the top puck. The ground shield may be characterized by an inner region extending radially through the top puck. The ground shield may further be characterized by an outer region extending perpendicular to the inner region.
1. A substrate support assembly comprising:
a top puck defining a substrate support surface, wherein the top puck is characterized by a height;
an RF electrode embedded within the top puck proximate the substrate support surface;
a heater embedded within the top puck; and
a ground shield embedded within the top puck, wherein the ground shield is characterized by an inner region extending radially through the top puck, wherein the ground shield is further characterized by an outer region extending perpendicular to the inner region, wherein the outer region of the ground shield extends vertically at least partially through the height of the top puck at a radius within the top puck.
2. The substrate support assembly of claim 1 , wherein the top puck defines a recess within the substrate support surface configured to receive a substrate for processing.
3. The substrate support assembly of claim 1 , wherein the top puck comprises a ceramic material.
4. The substrate support assembly of claim 1 , wherein the heater is positioned within the top puck between the RF electrode and the ground shield.
5. The substrate support assembly of claim 4 , wherein the heater is configured to heat a substrate supported by the top puck to a temperature greater than or about 300° C.
6. The substrate support assembly of claim 4 , wherein the heater comprises a first heater and a second heater, wherein the second heater is independently controllable from the first heater, and wherein the second heater extends around an outer edge of the first heater.
7. The substrate support assembly of claim 1 , further comprising a stem coupled with the top puck on a second surface of the top puck opposite the substrate support surface, wherein the stem defines an internal channel through which an RF rod extends and couples with the RF electrode.
8. The substrate support assembly of claim 7 , further comprising a ground return extending through the internal channel coaxially with the RF rod.
9. The substrate support assembly of claim 1 , further comprising a ground impedance electrode disposed within the top puck proximate the substrate support surface.
10. A substrate support assembly comprising:
a top puck defining a substrate support surface and characterized by a height;
a stem coupled with the top puck on a second surface of the top puck opposite the substrate support surface;
an RF electrode embedded within the top puck proximate the substrate support surface;
a heater embedded within the top puck; and
a ground shield embedded within the top puck, wherein the ground shield comprises a base extending radially through the top puck, wherein the ground shield further comprises a plurality of intermediate rings positioned vertically between the ground shield base and the RF electrode, wherein the plurality of intermediate rings are vertically offset from one another within the top puck, wherein each ring of the plurality of intermediate rings is positioned within 1 cm of an adjacent ring within the top puck, and wherein the plurality of intermediate rings are electrically coupled with the base.
11. The substrate support assembly of claim 10 , wherein the top puck defines a recess within the substrate support surface configured to receive a substrate for processing.
12. The substrate support assembly of claim 10 , wherein the top puck and the stem comprise a ceramic material.
13. The substrate support assembly of claim 10 , wherein the heater is positioned within the top puck between the RF electrode and the ground shield.
14. The substrate support assembly of claim 13 , wherein the heater is configured to heat a substrate supported by the top puck to a temperature greater than or about 300° C.
15. The substrate support assembly of claim 13 , wherein the heater comprises a first heater and a second heater, wherein the second heater is independently controllable from the first heater, and wherein the second heater extends around an outer edge of the first heater.
16. The substrate support assembly of claim 10 , further comprising a ground impedance electrode disposed within the top puck proximate the substrate support surface, wherein the ground impedance electrode is coupled with ground along a separate ground path from the ground shield.
17. The substrate support assembly of claim 10 , further comprising a conductive post extending vertically within the top puck and electrically coupling the intermediate ring of the ground shield with the base of the ground shield.