Method and apparatus for plasma dicing a semi-conductor wafer
The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.
1. A method for plasma dicing a substrate, the method comprising:
providing a transfer arm;
providing a process chamber having a wall;
providing a plasma source adjacent to the wall of the process chamber;
providing a work piece support within the process chamber;
providing a lifting mechanism within the work piece support;
placing the substrate onto a support film on a frame to form the work piece, the frame having an underside;
placing the work piece onto the transfer arm;
transferring the work piece into the process chamber onto the lifting mechanism using the transfer arm, the lifting mechanism contacting the underside of the frame;
generating a plasma through the plasma source; and
etching the work piece through the generated plasma.
2. The method according to claim 1 , wherein the transfer arm maintaining the frame coplanar to the substrate during the transferring step.
3. The method according to claim 1 wherein the lifting mechanism does not make point contact with the substrate of the work piece.
4. The method according to claim 1 wherein the transfer arm does not support the substrate of the work piece alone.
5. The method according to claim 4 wherein the transfer arm supports the frame of the work piece alone.
6. The method according to claim 4 wherein the transfer arm supports both the tape and the frame of the work piece.
7. The method according to claim 4 further comprising aligning the work piece in the transfer arm using an alignment fixture.
8. A method for plasma dicing a substrate, the method comprising:
providing a transfer arm;
providing a process chamber having a wall;
providing a plasma source adjacent to the wall of the process chamber;
providing a work piece support within the process chamber;
providing a lifting mechanism within the work piece support;
placing the substrate onto a support film on a frame to form the work piece, the frame having an underside;
placing the work piece onto the transfer arm, the transfer arm contacting the underside of the frame;
transferring the work piece into the process chamber onto the lifting mechanism using the transfer arm, the lifting mechanism contacting the underside of the frame;
generating a plasma through the plasma source; and
etching the work piece through the generated plasma.
9. The method according to claim 8 , wherein the transfer arm maintaining the frame coplanar to the substrate during the transferring step.
10. The method according to claim 8 wherein the lifting mechanism does not make point contact with the substrate of the work piece.
11. The method according to claim 8 wherein the transfer arm supports the frame of the work piece alone.
12. The method according to claim 8 wherein the transfer arm supports both the tape and the frame of the work piece.