IP Library Granted Patent US 10,332,897
Granted Patent B2
US 10,332,897 · App. 16/133,176 · Granted Jun 25, 2019

Method of reducing fin width in FinFet SRAM array to mitigate low voltage strap bit fails

Inventors: Xiaoqiang Zhang (Clifton Park, NY); Hui Zang (Guilderland, NY); Ratheesh R. Thankalekshmi (Clifton Park, NY); Randy W. Mann (Milton, NY)
Assignee: GLOBALFOUNDRIES INC.
H01L27/1104H01L27/0207H01L29/66545H01L29/66818
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Quick Facts
Patent No.
US 10,332,897
App. No.
16/133,176
Granted
Jun 25, 2019
Kind
B2
Abstract

Various aspects include a static random access memory (SRAM) bitcell array structure. In some cases, the SRAM bitcell array structure includes at least one fin in an array of fins in a substrate, where a width of a first portion of the at least one fin is less than a width of a second portion of the at least one fin in the array of fins.

Claims (16)

1. A static random access memory (SRAM) bitcell array structure comprising:

at least one fin in an array of fins in a substrate,

wherein a width of a first portion of the at least one fin is less than a width of a second portion of the at least one fin in the array of fins,

wherein the first portion of the at least one fin in the array of fins is located in a strap region of the array of fins, and

wherein the first portion of the at least one fin in the array of fins is an end of the at least one fin.

2. The structure of claim 1 , wherein the at least one fin includes an N-type fin.

3. The structure of claim 1 , wherein the width of the first portion of the at least one fin is approximately 0.5 nanometers to approximately 1 nanometer less than the second portion of the at least one fin.

4. The structure of claim 1 , wherein the at least one fin is one of a set of three outermost fins of the array of fins.

5. The structure of claim 1 , wherein a width of the second portion of the at least one fin is greater than a width of a third portion of the at least one fin in the array of fins.

6. A static random access memory (SRAM) bitcell array structure comprising:

at least one fin in an array of fins in a substrate,

wherein a width of a first portion of the at least one fin is less than a width of a second portion of the at least one fin in the array of fins, and

wherein the width of the first portion of the at least one fin is approximately 0.5 nanometers to approximately 1 nanometer less than the second portion of the at least one fin.

7. The structure of claim 6 , wherein the at least one fin includes an N-type fin.

8. The structure of claim 7 , wherein the at least one fin is one of a set of three outermost fins of the array of fins.

9. The structure of claim 8 , wherein a width of the second portion of the at least one fin is greater than a width of a third portion of the at least one fin in the array of fins.

Assignments (3)
RELEASE OF SECURITY INTEREST Recorded May 12, 2021
From: WILMINGTON TRUST, NATIONAL ASSOCIATION
To: GLOBALFOUNDRIES U.S. INC.
Reel/Frame 056987/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 2, 2020
From: GLOBALFOUNDRIES INC.
To: GLOBALFOUNDRIES U.S. INC.
Reel/Frame 054633/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 18, 2018
From: ZHANG, XIAOQIANG; ZANG, HUI; THANKALEKSHMI, RATHEESH R.; MANN, RANDY W.
To: GLOBALFOUNDRIES INC.
Reel/Frame 046900/0738 →
Continuity (5)
Division 15603827 · May 24, 2017
Provisional Application 62468809 · Mar 8, 2017
Provisional Application 62469774 · Mar 10, 2017
Provisional Application 62470223 · Mar 11, 2017
Related Publication 20190019798A1 · Jan 17, 2019