Examination device
The present invention provides an inspection device that is capable of detecting foreign matter with high accuracy, the inspection device including: a light source; an electro-optic element on which light from the light source is incident and which changes a phase of the light into at least two states; and a controller. The controller corrects a phase fluctuation of the electro-optic element itself, using intensity modulation characteristics of the eletro-optic element which are obtained by changing an applied voltage that is input to the electro-optic element.
1. A semiconductor inspecting device comprising:
a stage for mounting a specimen;
an illumination optical system; and
a detection unit,
wherein the illumination optical system further comprises
a laser beam source irradiating a laser beam;
an electro-optic element which changes a polarization state of the laser beam from the laser beam source based on a voltage applied to the electro-optic element;
a wave plate which changes the polarization state of the laser beam through the electro-optic element according to an angle of the wave plate; and
a polarization beam splitter which diverge the laser beam through the wave plate with an intensity determined by the polarization state of the leaser beam,
wherein, before inspecting the specimen, the angle of the wave plate is adjusted such that a lower intensity of the laser beam through the polarization beam splitter in state that a first voltage is applied to the electro-optic element, is lower than a higher intensity of the laser beam through the polarization beam splitter in a state that second voltage is applied to the electro-optic element, and
wherein, during inspecting the specimen, the voltage applied to the electro-optic element is changed to the first voltage if a presence of foreign matter having a certain size is predicted.
2. A semiconductor inspecting device according to claim 1 , wherein the wherein the electro-optic element is a Pockels cell.
3. A semiconductor inspecting device according to claim 1 ,
wherein the wave plate is a half-wave plate, and
wherein said lower intensity is equal or lower than 50% of said intensity.