IP Library › Granted Patent US 10,720,566
Granted Patent B2
US 10,720,566 · App. 16/135,577 · Granted Jul 21, 2020

Bonding method

Inventors: Tomoyoshi Tai (Inazawa, JP); Yuji Hori (Owariasahi, JP); Keiichiro Asai (Nagoya, JP); Takashi Yoshino (Ama, JP); Masashi Goto (Nagoya, JP); Masahiko Namerikawa (Seto, JP)
Assignee: NGK INSULATORS, LTD.
H01L41/313H01L41/09H01L41/187H01L41/337H03H9/02559H03H9/02574H03H9/02622H03H9/25H01L21/2007H01L24/83H03H3/08Y10T29/42
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Quick Facts
Patent No.
US 10,720,566
App. No.
16/135,577
Granted
Jul 21, 2020
Kind
B2
Abstract

It is formed, over a supporting body made of a ceramic, a bonding layer composed of one or more material selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide and niobium pentoxide. Neutralized beam is irradiated onto a surface of the bonding layer to activate the surface of the bonding layer. The surface of the bonding layer and the piezoelectric single crystal substrate are bonded by direct bonding.

Claims (11)

1. A method of bonding a supporting body comprising a ceramic and a piezoelectric single crystal substrate, said method comprising the steps of:

forming a bonding layer over said supporting body, said bonding layer comprising one or more materials selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide and niobium pentoxide;

irradiating a first neutralized atomic beam onto a surface of said bonding layer to activate said surface of said bonding layer;

providing an intermediate layer over said piezoelectric single crystal substrate, said intermediate layer comprising one or more material selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide and niobium pentoxide;

irradiating a second neutralized atomic beam onto a surface of said intermediate layer to activate said surface of said intermediate layer; and

bonding said surface of said bonding layer and said surface of said intermediate layer by direct bonding.

2. The method of claim 1 , wherein said surface of said bonding layer is activated after said surface of said bonding layer is flattened.

3. The method of claim 1 , further comprising the step of processing said piezoelectric single crystal substrate to form a roughened surface, wherein said intermediate layer is provided on said roughened surface.

4. The method of claim 1 , wherein said surface of said intermediate layer is activated after said surface of said intermediate layer is flattened.

5. The method of claim 1 , wherein said supporting body comprises a material selected from the group consisting of mullite, cordierite and sialon.

6. The method of claim 1 , wherein said piezoelectric single crystal substrate comprises lithium niobate, lithium tantalate or lithium niobate-lithium tantalate solid solution.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 20, 2018
From: TAI, TOMOYOSHI; HORI, YUJI; ASAI, KEIICHIRO; YOSHINO, TAKASHI; GOTO, MASASHI; NAMERIKAWA, MASAHIKO
To: NGK INSULATORS, LTD.
Reel/Frame 046918/0292 →
Priority Claims (1)
JP 2016-061713 · Mar 25, 2016 · national
Continuity (2)
Continuation PCTJP2017006463 · Feb 22, 2017
Related Publication 20190036008A1 · Jan 31, 2019
Cited By (1)
US 12,512,810