Wafer element with an adjusted print resolution assist feature
A wafer element fabrication method is provided. The wafer element fabrication method includes forming a device element on a substrate such that the device element includes an upper surface and a sidewall extending from the upper surface to the substrate. The wafer element fabrication method further includes forming an adjusted print resolution assist feature (APRAF) on the substrate such that the APRAF is smaller than the device element in at least one dimension. In addition, the wafer element fabrication method includes depositing surrounding material, which is different from materials of the APRAF, to surround the APRAF and to lie on the upper surface in abutment with the sidewall of the device element.
1. A wafer element fabrication method, comprising:
forming a single device element directly on an upper surface of a substrate such that the single device element comprises an upper device element surface and a sidewall extending exclusively vertically in a height dimension from the upper surface to the substrate;
forming an adjusted print resolution assist feature (APRAF) directly on the upper surface of the substrate such that the APRAF is smaller than the device element in at least the height dimension; and
depositing surrounding oxide material, which is different from materials of the APRAF, to surround an entirety of the APRAF and to lie directly on the upper surface of the substrate in abutment with an entirety of the sidewall of the single device element.
2. The wafer element fabrication method according to claim 1 , wherein the single device element and the APRAF comprise similar materials.
3. The wafer element fabrication method according to claim 1 , wherein the surrounding oxide material comprises dielectric material.
4. The wafer element fabrication method according to claim 1 , wherein the APRAF is shorter than the single device element.
5. The wafer fabrication method according to claim 1 , wherein the APRAF is tapered from the substrate.
6. The wafer element fabrication method according to claim 1 , wherein:
the single device element comprises a lithographic edge element,
the surrounding oxide material comprises an entirely flat uppermost surface extending over respective portions of the single device element and the APRAF and extending over regions between the single device element and the APRAF, and
the APRAF is configured as multiple APRAFs arrayed with increasing distance from the sidewall.
7. The wafer element fabrication method according to claim 1 , wherein:
the single device element comprises a reactive-ion-etch-formed (RIE-formed) feature,
the surrounding oxide material comprises an entirely flat uppermost surface extending over respective portions of the device element and the APRAF and extending over regions between the single device element and the APRAF, and
the sidewall surrounds an open region with the APRAF and is configured as multiple APRAFs arrayed within the open region.
8. A wafer element fabrication method, comprising:
forming a single device element comprising an upper surface and a sidewall extending exclusively vertically in a height dimension;
forming an adjusted print resolution assist feature (APRAF) smaller than the device element in at least the height dimension; and
depositing surrounding oxide material, which different from materials of the APRAF, to surround an entirety of the APRAF and to lie on the upper surface in abutment with an entirety of the sidewall.
9. The wafer element fabrication method according to claim 8 , wherein the single device element and the APRAF comprise similar materials.
10. The wafer element fabrication method according to claim 8 , wherein the surrounding oxide material comprises dielectric material.
11. The wafer element fabrication method according to claim 8 , wherein the APRAF is shorter than the single device element.
12. The wafer fabrication method according to claim 8 , wherein the APRAF is tapered.
13. The wafer element fabrication method according to claim 8 , wherein:
the single device element comprises a lithographic edge element,
the surrounding oxide material comprises an entirely flat uppermost surface extending over respective portions of the device element and the APRAF and extending over regions between the single device element and the APRAF, and
the APRAF is configured as multiple APRAFs arrayed with increasing distance from the sidewall.
14. The wafer element fabrication method according to claim 8 , wherein:
the single device element comprises a reactive-ion-etch-formed (RIE-formed) feature,
the surrounding oxide material comprises an entirely flat uppermost surface extending over respective portions of the device element and the APRAF and extending over regions between the single device element and the APRAF, and
the sidewall surrounds an open region with the APRAF and is configured as multiple APRAFs arrayed within the open region.
15. The wafer element fabrication method according to claim 8 , wherein the single device element is one of a lithographic edge element and a reactive-ion-etch formed element.