Contact structure for semiconductor device
A method of forming a semiconductor device includes forming a source/drain region on a substrate and forming a first interlayer dielectric (ILD) layer over the source/drain region. The method further includes forming a first conductive region within the first ILD layer, selectively removing a portion of the first conductive region to form a concave top surface of the first conductive region. The method also includes forming a second ILD layer over the first ILD layer and forming a second conductive region within the second ILD layer and on the concave top surface. The concave top surface provides a large contact area, and hence reduced contact resistance between the first and second conductive regions.
1. A semiconductor device, comprising:
a fin structure on a substrate;
an epitaxial source/drain region on the fin structure;
an interlayer dielectric (ILD) layer over the epitaxial source/drain region;
a source/drain contact structure comprising:
a first conductive region over the epitaxial source/drain region;
a second conductive region over the first conductive region; and
a concavely curved interface between the first and second conductive regions; and
insulating spacers positioned within the ILD layer and along sidewalls of the second conductive region.
2. The semiconductor device of claim 1 , wherein a top surface of the first conductive region is below a top surface of the ILD layer.
3. The semiconductor device of claim 1 , the ILD layer is over the epitaxial source/drain region, wherein a first portion of the second conductive region is positioned within the ILD layer and a second portion of the second conductive region extends from the ILD layer.
4. The semiconductor device of claim 3 , further comprising an other ILD layer over the ILD layer, wherein:
the second conductive region extends into the other ILD layer; and
the first conductive region and the second conductive region are within the ILD layer and the other ILD layer.
5. The semiconductor device of claim 4 , further comprising:
a third ILD layer over the other ILD layer; and
an interconnect extending through the third ILD layer and connected to the second conductive region, wherein the interconnect comprises a dual-damascene structure.
6. The semiconductor device of claim 4 , further comprising:
other insulating spacers positioned within the other ILD layer and along sidewalls of the second conductive region.
7. A semiconductor device, comprising:
a fin structure on a substrate;
a source/drain region on the fin structure;
a first interlayer dielectric (ILD) layer over the source/drain region;
a second ILD layer over the first ILD layer;
a source/drain contact structure comprising a conductive over the source/drain region and positioned within the first and the second ILD layers, wherein a top surface of the conductive region is a concavely curved surface; and
insulating spacers positioned within the second ILD layer and along sidewalls of the conductive region.
8. The semiconductor device of claim 7 , further comprising:
a third ILD layer over the second ILD layer; and
an interconnect extending through the third ILD layer and connected to the conductive region, wherein the interconnect comprises a dual-damascene structure.
9. The semiconductor device of claim 8 , wherein a first portion of the interconnect is positioned within the second ILD layer and a second portion of the interconnect extends from the second ILD layer.
10. The semiconductor device of claim 7 , wherein the concavely curved surface is below a top surface of the second ILD layer.
11. The semiconductor device of claim 7 , further comprising:
insulating spacers positioned within the first ILD layer and along sidewalls of the conductive region.
12. A semiconductor device, comprising:
a fin structure on a substrate;
a source/drain region over the fin structure;
a first interlayer dielectric (ILD) layer over the source/drain region;
a second ILD layer over the first ILD layer;
a contact structure over the source/drain region, wherein the contact structure comprises a first and second contact sub-structures connected to one another, wherein the first contact sub-structure is in the first ILD layer and has a first concavely curved top surface, and the second contact sub-structure is in the second ILD layer and has a second concavely curved top surface; and
insulating spacers positioned within the second ILD layer and along sidewalls of the second contact sub-structure.
13. The semiconductor device of claim 12 , wherein:
the first concavely curved top surface is located between the first contact sub-structure and the second contact sub-structure.
14. The semiconductor device of claim 12 , wherein the first concavely curved top surface of the first contact sub-structure is below a top surface of the first ILD layer.
15. The semiconductor device of claim 12 , wherein a first portion of the second contact sub-structure is positioned within the first ILD layer and a second portion of the second contact sub-structure extends from the first ILD layer.
16. The semiconductor device of claim 12 , wherein the second concavely curved top surface of the second contact sub-structure is below a top surface of the second ILD layer.
17. The semiconductor device of claim 12 , further comprising:
insulating spacers positioned within the first ILD layer and along sidewalls of the second contact sub-structure.
18. The semiconductor device of claim 12 , further comprising:
a third ILD layer over the second ILD layer; and
an interconnect extending through the third ILD layer and connected to the second contact sub-structure, wherein the interconnect comprises a dual-damascene structure.