Semiconductor chip and power module, and manufacturing method of the same

1. A semiconductor chip comprising:

a semiconductor substrate; and

a front surface electrode which is formed in a principal surface of the semiconductor substrate,

wherein the front surface electrode includes an Al alloy film which contains a high melting-point metal, and

the Al alloy film contains a columnar Al crystal along a thickness direction of the Al alloy film.

2. The semiconductor chip according to claim 1 ,

wherein the semiconductor substrate is made of SiC.

3. The semiconductor chip according to claim 1 ,

wherein the high melting-point metal is any one of Ta, Nb, Re, Zr, W, Mo, V, Hf, Ti, Cr, and Pt.

4. The semiconductor chip according to claim 1 ,

wherein a Ni film is formed in an upper layer of the Al alloy film, and

the Al alloy film and the Ni film are laminated.

5. The semiconductor chip according to claim 1 ,

wherein an intermetallic compound made of the high melting-point metal and Al is precipitated in the Al alloy film.

6. A power module comprising:

a semiconductor chip which includes a principal surface and a rear surface on an opposite side of the principal surface, and is provided with a front surface electrode formed in the principal surface;

a substrate which supports the semiconductor chip and includes a wiring portion; and

a conductive member which electrically connects the front surface electrode of the semiconductor chip and the wiring portion of the substrate,

wherein the front surface electrode of the semiconductor chip includes an Al alloy film which contains a high melting-point metal, and

the Al alloy film contains a columnar Al crystal which extends along a thickness direction of the Al alloy film.

7. The power module according to claim 6 ,

wherein the semiconductor chip includes a semiconductor substrate which is made of SiC.

8. The power module according to claim 6 ,

wherein the high melting-point metal is any one of Ta, Nb, Re, Zr, W, Mo, V, Hf, Ti, Cr, and Pt.

9. The power module according to claim 6 ,

wherein the conductive member is an Al wire.

10. The power module according to claim 6 ,

wherein the semiconductor chip is mounted on the substrate through a sintered metal.

11. The power module according to claim 6 ,

wherein an intermetallic compound made of the high melting-point metal and Al is precipitated in the Al alloy film of the front surface electrode of the semiconductor chip.

12. The power module according to claim 6 ,

wherein a rear surface electrode is formed in the rear surface of the semiconductor chip, and

the rear surface electrode includes an Al alloy film which contains a high melting-point metal.

13. The power module according to claim 6 ,

wherein the front surface electrode formed in the principal surface of the semiconductor chip includes a metal film in a lower layer of the Al alloy film.

14. A manufacturing method of a power module, comprising:

(a) mounting a semiconductor chip on a substrate provided with a wiring portion, the semiconductor chip including a principal surface and a rear surface on an opposite side of the principal surface, and being provided with a front surface electrode which is formed in the principal surface and includes an Al alloy film containing a high melting-point metal; and

(b) electrically connecting the front surface electrode of the semiconductor chip and the wiring portion of the substrate by a conductive member after the (a),

wherein the Al alloy film of the front surface electrode of the semiconductor chip contains a columnar Al crystal which extends along a thickness direction of the Al alloy film.

15. The manufacturing method of the power module according to claim 14 ,

wherein the semiconductor chip includes a semiconductor substrate which is made of SiC,

the high melting-point metal is any one of Ta, Nb, Re, Zr, W, Mo, V, Hf, Ti, Cr, and Pt, and

in the (b), the front surface electrode of the semiconductor chip and the wiring portion of the substrate are electrically connected by an Al wire.