Oxide semiconductor field effect transistor and forming method thereof
An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.
1. An oxide semiconductor field effect transistor, comprising:
a first insulating layer disposed on a substrate;
a source and a drain disposed in the first insulating layer;
only a U-shaped channel layer sandwiched by the source and the drain without having any channel layers under the source and the drain;
a metal gate disposed on the U-shaped channel layer, wherein the metal gate comprises a gate oxide layer and a metal layer, and the U-shaped channel layer comprises a plurality of oxide semiconductor layers; and
a composite layer located between the gate oxide layer and the metal layer.
2. The oxide semiconductor field effect transistor according to claim 1 , wherein the metal gate comprises a low resistivity metal.
3. The oxide semiconductor field effect transistor according to claim 2 , wherein the gate oxide layer and the metal layer have U-shaped cross-sectional profiles.
4. The oxide semiconductor field effect transistor according to claim 1 , wherein a top surface of the metal gate is higher than top surfaces of the source and the drain.
5. The oxide semiconductor field effect transistor according to claim 1 , wherein a top surface of the U-shaped channel layer is higher than top surfaces of the source and the drain.
6. The oxide semiconductor field effect transistor according to claim 1 , further comprising:
an insulating layer disposed between the first insulating layer and the substrate.
7. The oxide semiconductor field effect transistor according to claim 6 , further comprising:
a back gate insulating layer disposed between the first insulating layer and the insulating layer.
8. The oxide semiconductor field effect transistor according to claim 6 , further comprising:
a back gate disposed right below the U-shaped channel layer and in the insulating layer.
9. The oxide semiconductor field effect transistor according to claim 8 , wherein the whole U-shaped channel layer vertically overlaps the back gate.
10. The oxide semiconductor field effect transistor according to claim 9 , wherein the back gate protrudes from the U-shaped channel layer.
11. The oxide semiconductor field effect transistor according to claim 1 , further comprising:
a cap layer conformally covering the source and the drain, and the first insulating layer blanketly covering the cap layer.