Carrier substrate and method of manufacturing semiconductor package using the same

1. A carrier substrate comprising:

a core layer;

a first metal layer disposed on the core layer; and

a plurality of unit pattern portions disposed on the first metal layer,

wherein

the plurality of unit pattern portions each have a planar area smaller than a planar area of the first metal layer, and

the plurality of unit pattern portions each include a second metal layer disposed on the first metal layer, a release layer disposed on the second metal layer, and a third metal layer disposed on the release layer.

2. The carrier substrate of claim 1 , wherein the plurality of unit pattern portions are physically spaced apart from each other by a predetermined interval.

3. The carrier substrate of claim 1 , wherein the first metal layer has a planar area larger than a planar area of the core layer.

4. The carrier substrate of claim 3 , wherein the first metal layer covers a top surface and a side surface of the core layer.

5. The carrier substrate of claim 1 , wherein the first metal layer has a planar area smaller than a planar area of the core layer.

6. The carrier substrate of claim 5 , wherein an outer portion of the core layer near edges of an upper surface of the core layer is exposed from the first metal layer.

7. The carrier substrate of claim 5 , wherein an outer portion of the core layer near a side surface is exposed from the first metal layer.

8. The carrier substrate of claim 1 , wherein the core layer is a glass plate.

9. The carrier substrate of claim 1 , wherein each of the plurality of unit pattern portions further comprises a fourth metal layer disposed on the third metal layer.

10. The carrier substrate of claim 9 , wherein

the first metal layer comprises a titanium (Ti) layer,

the second metal layer comprises a copper (Cu) layer,

the third metal layer comprises a titanium (Ti) layer, and

the fourth metal layer comprises a copper (Cu) layer.

11. The carrier substrate of claim 10 , wherein a thickness of the Cu layer of the fourth metal layer is greater than a thickness of the Cu layer of the second metal layer.

12. The carrier substrate of claim 1 , wherein the release layer comprises an inorganic release layer.

13. The carrier substrate of claim 1 , further comprising:

an insulating layer disposed on the first metal layer to cover the plurality of unit pattern portions,

wherein the insulating layer is not in contact with the core layer.

14. A method of manufacturing a semiconductor package, the method comprising:

preparing a carrier substrate including a core layer, a first metal layer disposed on the core layer, and a plurality of unit pattern portions disposed on the first metal layer, each of the plurality of unit pattern portions having a planar area smaller than a planar area of the first metal layer, and the plurality of unit pattern portions each including a second metal layer disposed on the first metal layer, a release layer disposed on the second metal layer, and a third metal layer disposed on the release layer;

forming an interposer on the respective unit pattern portions;

cutting the carrier substrate and the interposer to disconnect the respective unit pattern portions from each other;

placing a plurality of semiconductor chips on the interposer on the respective cut unit pattern portions;

forming an encapsulant on the interposer on the respective cut unit pattern portions to form a plurality of semiconductor packages on the respective cut unit pattern portions, the encapsulant encapsulating the semiconductor chips, and the plurality of semiconductor packages each including an interposer portion, one or more semiconductor chips disposed on the interposer portion, and an encapsulation portion disposed to encapsulate the one or more semiconductor chips;

trimming the respective cut unit pattern portions to disconnect the plurality of semiconductor packages on the respective cut unit pattern portions from each other; and

separating the carrier substrate from the respective cut semiconductor packages.

15. The method of claim 14 , wherein the separating of the carrier substrate comprises separating a release layer and a third metal layer of the respective cut and trimmed unit pattern portions.

16. The method of claim 15 , wherein the respective disconnected and trimmed unit pattern portions remaining on the semiconductor package are removed by an etching process after the separating of the carrier substrate.

17. A carrier substrate comprising:

a core layer;

a first metal layer disposed on the core layer;

a plurality of unit pattern portions, disposed on the first metal layer, comprising at least one metal layer and at least one release layer; and

an insulating layer covering the plurality of unit pattern portions,

wherein

the plurality of unit pattern portions each have a planar area smaller than a planar area of the first metal layer, and

the insulating layer is separated from the core layer with the first metal layer.

18. The carrier substrate of claim 17 , wherein the first metal layer has a planar area larger than a planar area of the core layer, and

the first metal layer covers a top surface and a side surface of the core layer.

19. The carrier substrate of claim 17 , wherein the first metal layer has a planar area smaller than a planar area of the core layer, and

an outer portion of the core layer near edges of an upper surface and an outer portion of the core layer near a side surface of the core layer are exposed from the first metal layer.

20. The carrier substrate of claim 17 , wherein the core layer is a glass plate,

the first metal layer comprises a titanium (Ti) layer,

the at least one metal layer comprises a copper (Cu) layer, and

the at least one release layer comprises an inorganic release layer.