Manufacturing method for liquid crystal display device
A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.
1. A display device comprising:
an interlayer insulation film;
a first inorganic insulation film above the interlayer insulation film;
a second inorganic insulation film above the first inorganic insulation film;
an orientation film covering the second inorganic insulation film;
a source electrode between the interlayer insulation film and the first inorganic insulation film;
a counter electrode between the first inorganic insulation film and the second inorganic insulation film;
a pixel electrode between the second inorganic insulation film and the orientation film; and
an organic insulation film between the counter electrode and the interlayer insulation film;
wherein
the first inorganic insulation film has a first hole,
the second inorganic insulation film has a second hole,
the pixel electrode connects to the source electrode via the first hole and the second hole,
a wall surface of the first inorganic insulation film defining the first hole is in contact with the pixel electrode,
a wall surface of the second inorganic insulation film defining the second hole is in contact with the pixel electrode, and
the second inorganic insulation film around the second hole is laminated on the first inorganic insulation film around the first hole.
2. The display device according to claim 1 , further comprises a metal portion between the organic insulation film and the second inorganic insulation film, wherein the metal portion is electrically connected to the counter electrode.
3. The display device according to claim 2 , wherein the source electrode has a upper surface, which face toward the pixel electrode, the first inorganic insulation film is contacted with the upper surface, and the second inorganic insulation film is not contacted with the upper surface.
4. The display device according to claim 3 , further comprises a poly-silicon film connected to the source electrode;
a gate electrode; and
a gate insulation film between the gate electrode and the poly-silicon film,
wherein the gate electrode is between the gate insulation film and the interlayer insulation film.
5. The display device according to claim 4 , wherein
a thickness of the second inorganic insulation film is smaller than a thickness of the first inorganic insulation film.
6. The display device according to claim 1 , wherein
a thickness of the first inorganic insulation film is different from a thickness of the second inorganic insulation film.
7. The display device according to claim 1 , wherein
the first inorganic insulation film and the second inorganic insulation film are silicon nitride film, and
a second inorganic insulation film is not as dense as the first inorganic insulation film.
8. A display device comprising:
a source electrode of a thin film transistor;
a pixel electrode connected to the source electrode;
a first inorganic insulation film provided on the source electrode; and
a second inorganic insulating film provided between the pixel electrode and the first inorganic insulation film;
wherein the second inorganic insulation film is stacked on the first inorganic insulation film above the source electrode,
the first inorganic insulation film and the second inorganic insulation film have a through hole,
the source electrode and the pixel electrode connect to each other via the through hole, and
the pixel electrode is in contact with the first inorganic insulation film and the second inorganic insulation film in the through hole.
9. The display device according to claim 8 , further comprising an organic insulation film provided between the source electrode and the pixel electrode,
wherein the organic insulation film contacts with at least one of the first inorganic insulation film and the second inorganic insulation film.
10. The display device according to claim 9 ,
wherein the organic insulation film does not contact with the pixel electrode.
11. The display device according to claim 10 ,
wherein the organic insulation film does not contact with the source electrode.
12. The display device according to claim 9 , further comprising a counter electrode provided between the pixel electrode and the organic insulation film,
wherein the counter electrode does not contact with the pixel electrode and the source electrode.
13. The display device according to claim 8 ,
wherein the first inorganic insulation film and the second inorganic insulation film are silicon nitride film, and
a second inorganic insulation film is not as dense as the first inorganic insulation film.
14. The display device according to claim 8 , wherein
a thickness of the first inorganic insulation film is different from a thickness of the second inorganic insulation film.
15. The display device according to claim 8 , further comprises a metal portion between the pixel electrode and the organic insulation film, wherein the metal portion is electrically connected to the counter electrode.
16. A display device comprising:
an interlayer insulation film;
a first inorganic insulation film above the interlayer insulation film;
a second inorganic insulation film above the first inorganic insulation film;
an orientation film covering the second inorganic insulation film;
a source electrode between the interlayer insulation film and the first inorganic insulation film;
a counter electrode between the first inorganic insulation film and the second inorganic insulation film;
a pixel electrode between the second inorganic insulation film and the orientation film; and
an organic insulation film between the counter electrode and the interlayer insulation film, wherein
the first inorganic insulation film has a first hole,
the second inorganic insulation film has a second hole,
the pixel electrode connects to the source electrode via the first hole and the second hole,
a wall surface of the first inorganic insulation film defining the first hole is in contact with the pixel electrode,
a wall surface of the second inorganic insulation film defining the second hole is in contact with the pixel electrode.