IP Library › Granted Patent US 10,429,868
Granted Patent B2
US 10,429,868 · App. 16/172,907 · Granted Oct 1, 2019

Flip voltage follower low dropout regulator

Inventors: Mahmoud Mohamed Rashad Ibrahim Elhebeary (Los Angeles, CA); Sameer Wadhwa (San Diego, CA)
Assignee: QUALCOMM Incorporated
G05F1/59G05F1/468G05F1/565G05F1/575H02M1/088
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Quick Facts
Patent No.
US 10,429,868
App. No.
16/172,907
Granted
Oct 1, 2019
Kind
B2
Abstract

A wide-tuning range low output impedance flip voltage follower (FVF) low dropout regulator (LDO) for large capacitor switching loads is disclosed. In some implementations, a touch sensing controller driver includes the LDO, which has an operational amplifier and a FVF. The FVF can have a gain device, a source follower device, and an adaptive level shifter coupled between a drain of the source follower device and a gate of the gain device.

Claims (45)

1. A touch sensing controller driver, comprising:

a plurality of switches, each of the plurality of switches configured to couple to a signal line of a touch panel;

a signal driver having an upper low dropout regulator (LDO) and a lower LDO, the upper LDO coupled to the plurality of switches to supply a current to the plurality of switches, the lower LDO coupled to the plurality of switches to sink the current from the plurality of switches, wherein the lower LDO comprises:

a lower operational amplifier having an output, a positive input, and a negative input; and

a lower flip voltage follower (FVF) having a lower gain device, a lower source follower device, and a lower adaptive level shifter connected to a drain of the lower source follower device and a gate of the lower gain device, wherein the output of the lower operational amplifier is configured to determine a voltage at a gate of the lower source follower device.

2. The touch sensing controller driver of claim 1 , wherein a drain of the lower gain device is coupled to the negative input of the lower operational amplifier.

3. The touch sensing controller driver of claim 1 , wherein the lower adaptive level shifter comprises:

a first diode-connected pMOS transistor coupled between the drain of the lower source follower device and the gate of the lower gain device;

a lower compensation capacitor coupled between the drain of the lower source follower device and the gate of the lower gain device; and

a second diode-connected nMOS transistor coupled between the gate of the lower gain device and Vss.

4. The touch sensing controller driver of claim 1 , wherein the upper LDO comprises:

an upper operational amplifier having an output, a positive input, and a negative input; and

an upper flip voltage follower (FVF) having an upper gain device, an upper source follower device, and an upper adaptive level shifter coupled between a drain of the upper source follower device and a gate of the upper gain device.

5. The touch sensing controller driver of claim 4 , wherein a gate of the upper source follower device is coupled to the output of the upper operational amplifier and a drain of the upper gain device is coupled to the positive input of the upper operational amplifier.

6. The touch sensing controller driver of claim 4 , wherein the upper level shifter comprises:

a first diode-connected nMOS transistor coupled between the drain of the upper source follower device and the gate of the upper gain device;

an upper compensation capacitor coupled between the drain of the upper source follower device and the gate of the upper gain device; and

a second diode-connected pMOS transistor coupled between the gate of the upper gain device and Vdd.

7. The touch sensing controller driver of claim 1 , wherein the lower LDO further comprises a plurality of lower replica FVFs.

8. The touch sensing controller driver of claim 7 , wherein each of the plurality of lower replica FVFs comprises a lower replica adaptive level shifter.

9. The touch sensing controller driver of claim 8 , wherein the lower replica adaptive level shifter comprises a first diode-connected pMOS transistor, a second diode-connected nMOS transistor, and a lower compensation capacitor.

10. The touch sensing controller driver of claim 4 , wherein the upper LDO further comprises a plurality of upper replica FVFs.

11. The touch sensing controller driver of claim 10 , wherein each of the plurality of upper replica FVFs comprises an upper replica adaptive level shifter.

12. The touch sensing controller driver of claim 11 , wherein the upper replica adaptive level shifter comprises a first diode-connected pMOS transistor, a second diode connected nMOS transistor, and an upper compensation capacitor.

13. An electronic system, comprising:

a touch sensing panel; and

a touch sensing controller driver coupled to the touch sensing panel, the touch sensing controller driver comprising:

a plurality of switches, each of the plurality of switches configured to couple to a signal line of a touch panel; and

a signal driver having an upper low dropout regulator (LDO) and a lower LDO, the upper LDO coupled to the plurality of switches to supply a current to the plurality of switches, the lower LDO coupled to the plurality of switches to sink the current from the plurality of switches, wherein the lower LDO comprises:

a lower operational amplifier having an output, a positive input, and a negative input; and

a lower flip voltage follower (FVF) having a lower gain device, a lower source follower device, and a lower adaptive level shifter connected to a drain of the lower source follower device and a gate of the lower gain device, wherein the output of the lower operational amplifier is configured to determine a voltage at a gate of the lower source follower device.

14. The electronic system of claim 13 , wherein a drain of the lower gain device is coupled to the negative input of the lower operational amplifier.

15. The electronic system of claim 13 , wherein the lower adaptive level shifter comprises:

a first diode-connected pMOS transistor coupled between the drain of the lower source follower device and the gate of the lower gain device;

a lower compensation capacitor coupled between the drain of the lower source follower device and the gate of the lower gain device; and

a second diode-connected nMOS transistor coupled between the gate of the lower gain device and Vss.

16. The electronic system of claim 13 , wherein the upper LDO comprises:

an upper operational amplifier having an output, a positive input, and a negative input; and

an upper flip voltage follower (FVF) having an upper gain device, an upper source follower device, and an upper adaptive level shifter coupled between a drain of the upper source follower device and a gate of the upper gain device.

17. The electronic system of claim 16 , wherein a gate of the upper source follower device is coupled to the output of the upper operational amplifier and a drain of the upper gain device is coupled to the positive input of the upper operational amplifier.

18. The electronic system of claim 16 , wherein the upper level shifter comprises:

a first diode-connected nMOS transistor coupled between the drain of the upper source follower device and the gate of the upper gain device;

an upper compensation capacitor coupled between the drain of the upper source follower device and the gate of the upper gain device; and

a second diode-connected pMOS transistor coupled between the gate of the upper gain device and Vdd.

19. The electronic system of claim 13 , wherein the lower LDO further comprises a plurality of lower replica FVFs.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 29, 2018
From: ELHEBEARY, MAHMOUD MOHAMED RASHAD IBRAHIM; WADHWA, SAMEER
To: QUALCOMM INCORPORATED
Reel/Frame 047334/0718 →
Continuity (2)
Division 15828608 · Dec 1, 2017
Related Publication 20190171243A1 · Jun 6, 2019
Cited By (2)
US 12,535,840 US 12,547,197