Reinforced semiconductor die and related methods
Implementations of methods of forming a plurality of reinforced die may include forming a plurality of die on a substrate and patterning a metal gang frame to form a plurality of metal plates. The plurality of metal plates may correspond to the plurality of die. The method may include coupling the metal gang frame over the plurality of die and singulating the plurality of die. Each die of the plurality of die may include the corresponding metal plate from the plurality of metal plates coupled over the plurality of die.
1. A method of forming a plurality of reinforced die comprising:
forming a plurality of die on a substrate;
patterning a metal gang frame to form a plurality of metal plates, the plurality of metal plates corresponding to the plurality of die;
coupling the metal gang frame over the plurality of die; and
singulating the plurality of die;
wherein each die of the plurality of die comprises the corresponding metal plate from the plurality of metal plates coupled over the plurality of die.
2. The method of claim 1 , further comprising coupling a base plate to a side of the substrate opposite the side of the substrate having a plurality of die formed thereon.
3. The method of claim 1 , wherein the metal gang frame comprises copper.
4. The method of claim 1 , wherein the metal gang frame is directly coupled to the substrate through an adhesive.
5. The method of claim 1 , wherein coupling the metal gang frame over the plurality of die further comprises heating and compressing the metal gang frame and the plurality of die.
6. The method of claim 1 , wherein singulating the metal gang frame comprises one of sawing or laser cutting.
7. The method of claim 1 , wherein the plurality of die comprises a plurality of insulated gate bipolar transistors.
8. The method of claim 1 , wherein the substrate comprises a thickness 75 micrometers or less.
9. A method of forming a plurality of reinforced die comprising:
forming a plurality of die on a first surface of a substrate;
patterning a metal gang frame to form a plurality of metal plates, the plurality of metal plates corresponding to the plurality of die;
coupling the metal gang frame over the plurality of die to the first surface of the substrate;
coupling a base plate to a second surface of the substrate, the second surface opposite the first surface; and
singulating the plurality of die after coupling the metal gang frame over the plurality of die.
10. The method of claim 9 , wherein the metal gang frame and the base plate each comprise copper.
11. The method of claim 9 , wherein the metal gang frame is directly coupled to the substrate through one of a silver sinter paste or a solder.
12. The method of claim 9 , wherein coupling the metal gang frame to the first surface of the substrate and coupling the base plate to the second surface of the substrate further comprises heating and compressing the metal gang frame, the substrate, and the base plate.
13. The method of claim 9 , wherein singulating the metal gang frame comprises one of sawing or laser cutting.
14. The method of claim 9 , wherein the plurality of die comprises a plurality of insulated gate bipolar transistors.
15. The method of claim 9 , wherein the substrate comprises a thickness less than 75 micrometers.