Electronic devices comprising n-type and p-type superlattices

1. An electronic device comprising:

a n-type superlattice providing n-type conductivity;

an i-type superlattice; and

a p-type superlattice providing p-type conductivity;

the n-type superlattice comprising alternating host layers and donor impurity layers, wherein:

the host layers of the n-type superlattice consist essentially of a group III metal nitride semiconductor material; and

the donor impurity layers consist essentially of a corresponding donor material;

the i-type superlattice comprising alternating host layers and impurity layers; wherein:

the host layers of the i-type superlattice consist essentially of the group III metal nitride semiconductor material; and

the impurity layers consist essentially of a rare-earth or lanthanide metal;

the p-type superlattice comprising alternating host layers and acceptor impurity layers, wherein:

the host layers of the p-type superlattice consist essentially of the group III metal nitride semiconductor material; and

the acceptor impurity layers consist essentially of a corresponding acceptor material; and

wherein the group III metal nitride semiconductor material of the host layers of the n-type superlattice, the host layers of the i-type superlattice, and the host layers of the p-type superlattice are the same.

2. The electronic device of claim 1 wherein the electronic device is an ultraviolet light emitting diode or an ultraviolet light detector.

3. The electronic device of claim 1 wherein the n-type superlattice, the i-type superlattice and the p-type superlattice form a PIN junction.

4. The electronic device of claim 1 wherein the i-type superlattice is an intrinsic region that has a bandgap that varies along a growth direction.

5. The electronic device of claim 1 wherein:

the i-type superlattice is an optical recombination superlattice; and

the lanthanide metal is triply ionized.

6. The electronic device of claim 1 wherein a period or a duty cycle of the p-type superlattice or the n-type superlattice is such that the p-type superlattice or the n-type superlattice is transparent to a photon emission wavelength or a photon absorption wavelength of the i-type superlattice.

7. The electronic device of claim 1 wherein the group III metal in the group III metal nitride semiconductor material comprises at least about 50% Al by mol.

8. The electronic device of claim 1 wherein the group III metal nitride semiconductor material is selected from at least one of:

aluminium nitride (AlN);

aluminium gallium nitride (Al x Ga 1−x N) where 0<x<1;

aluminium indium nitride (Al x In 1−x N) where 0<x<1; and

aluminium gallium indium nitride (Al x Ga y In 1−x−y N) where 0<x<1, 0<y<1 and x+y<1.

9. The electronic device of claim 1 wherein the n-type superlattice or the p-type superlattice is tensile strained or compressively strained.

10. The electronic device of claim 1 wherein a period of the p-type superlattice or a period of the n-type superlattice is non-uniform.

11. An i-type superlattice, the superlattice comprising:

alternating host layers and impurity layers, wherein:

the host layers consist essentially of a group III metal nitride semiconductor material; and

the impurity layers consist essentially of a donor material corresponding to the group III metal nitride semiconductor material, an acceptor material corresponding to the group III metal nitride semiconductor material, or a compensated material comprising the donor material and the acceptor material that correspond to the group III metal nitride semiconductor material.

12. The superlattice of claim 11 wherein the donor material or the acceptor material comprises Si, Mg or a rare-earth or lanthanide metal.

13. The superlattice of claim 11 wherein the superlattice comprises a repeating unit cell of a first host layer, a first impurity layer comprising Si, a second host layer, a second impurity layer comprising Gd, a third host layer, and a third impurity layer comprising Mg.

14. The superlattice of claim 11 wherein the impurity layers are optically active.

15. The superlattice of claim 11 wherein:

the superlattice is an optical recombination superlattice; and

the impurity layers comprise a lanthanide metal that is triply ionized.

16. The superlattice of claim 11 wherein subsequent impurity layers are separated by a distance such that electron or hole wavefunctions in electronic potential wells induced by atoms of the donor material or acceptor material spatially overlap.

17. The superlattice of claim 11 wherein the impurity layers alternate in series between donor impurity layers and acceptor impurity layers.

18. A method of making an electronic device comprising an n-type superlattice providing n-type conductivity and a p-type superlattice providing p-type conductivity, the method comprising the steps of:

a. for the p-type superlattice, forming on a substrate a first host layer consisting essentially of a group III metal nitride semiconductor material;

b. forming above the first host layer an acceptor impurity layer consisting of a monolayer of acceptor atoms;

c. forming above the acceptor impurity layer a second host layer consisting essentially of the group III metal nitride semiconductor material;

d. repeating steps (b) to (c) until the p-type superlattice reaches a desired thickness or comprises a desired number of alternating host layers and acceptor impurity layers;

e. for the n-type superlattice, forming above the p-type superlattice a third host layer consisting essentially of the group III metal nitride semiconductor material;

f. forming above the third host layer a donor impurity layer consisting of a monolayer of donor atoms;

g. forming above the donor impurity layer a fourth host layer consisting essentially of the group III metal nitride semiconductor material; and

h. repeating steps (f) to (g) until the n-type superlattice reaches a desired thickness or comprises a desired number of alternating host layers and donor impurity layers;

wherein the group III metal in the group III metal nitride semiconductor material comprises at least about 50% Al by mol.

19. The method of claim 18 wherein the electronic device is an ultraviolet light emitting diode or an ultraviolet light detector.

20. The method of claim 18 further comprising:

between steps (d) and (e), forming an intrinsic region comprised of one or more group III metal nitride semiconductor materials, wherein the n-type superlattice, the intrinsic region, and the p-type superlattice form a PIN junction.

21. The method of claim 20 wherein the intrinsic region has a bandgap that varies along a growth direction.

22. The method of claim 18 wherein each host layer has a thickness between about 1 nm and about 25 nm.