IP Library Granted Patent US 10,901,121
Granted Patent B2
US 10,901,121 · App. 16/183,491 · Granted Jan 26, 2021

Planarization of optical substrates

Inventors: Christopher J. Stolz (Lathrop, CA); James A. Folta (Livermore, CA); Paul B. Mirkarimi (Danville, CA); Regina Soufli (Livermore, CA); Christopher Charles Walton (Oakland, CA); Justin Wolfe (Modesto, CA); Carmen Menoni (Fort Collins, CO); Dinesh Patel (Fort Collins, CO)
Assignees: Lawrence Livermore National Security, LLC; Colorado State University Research Foundation
G02B3/00C03C17/3417C23C14/08C23C14/34C23C14/3442C23F4/00G02B5/0816C03C2218/33Y10T428/265
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,901,121
App. No.
16/183,491
Granted
Jan 26, 2021
Kind
B2
Abstract

A method of making a laser mirror in which a mirror substrate has at least a one micron size nodular defect includes depositing a planarization layer over the mirror substrate and the nodular defect, depositing a layer of silicon dioxide over the planarization layer, and etching away a portion of the layer of silicon dioxide. The method also includes thereafter, depositing a layer of hafnium dioxide over the layer of silicon dioxide and repeating the steps of depositing a layer of silicon dioxide, etching away a portion of the layer of silicon dioxide, and depositing a layer of hafnium dioxide until the nodular defect is reduced in size a predetermined amount.

Claims (30)

1. A method of making a laser mirror in which a mirror substrate has at least a one micron size nodular defect comprising:

depositing a planarization layer over the mirror substrate and the nodular defect;

depositing a layer of silicon dioxide over the planarization layer;

etching away a portion of the layer of silicon dioxide;

thereafter, depositing a layer of hafnium dioxide over the layer of silicon dioxide; and

repeating the steps of depositing a layer of silicon dioxide, etching away a portion of the layer of silicon dioxide, and depositing a layer of hafnium dioxide until the nodular defect is reduced in size a predetermined amount.

2. The method of claim 1 wherein depositing a layer of silicon dioxide comprises depositing a layer of controlled thickness.

3. The method of claim 2 wherein etching away a portion of the layer of silicon dioxide comprises etching away about half of a thickness of the layer of silicon dioxide.

4. The method of claim 1 wherein the planarization layer comprises silicon dioxide (SiO 2 ).

5. The method of claim 1 wherein the planarization layer comprises hafnium dioxide (HfO 2 ).

6. The method of claim 1 wherein the planarization layer comprises at least one of tantala (Ta 2 O 5 ) or zirconia (ZrO 2 ).

7. The method of claim 1 wherein the layer of silicon dioxide is at least one micron thick.

8. The method of claim 1 wherein depositing a layer of silicon dioxide comprises ion beam sputtering silicon dioxide.

9. The method of claim 1 wherein etching away a portion of the layer of silicon dioxide comprises ion beam etching.

10. An optical component comprising:

a substrate having at least an about one micron size nodule thereon, wherein a surface of the nodule projects above an upper surface of the substrate;

a planarization layer disposed across the upper surface of the substrate and over the nodule, the planarization layer comprised of a material that flows over and around the nodule to cover the nodule and to produce a new surface layer substantially flat and co-planar with the upper surface of the substrate, without requiring etching to produce the new surface layer; and

an alternating sequence of layers of silicon dioxide and hafnium dioxide disposed on the planarization layer.

11. The optical component of claim 10 wherein the planarization layer comprises silicon dioxide.

12. The optical component of claim 10 wherein the planarization layer is characterized by a thickness of at least about 1.2 microns.

13. The optical component of claim 12 wherein the thickness is at least about 2 microns.

14. The optical component of claim 10 wherein the silicon dioxide layers comprise sputtered silicon dioxide and the hafnium dioxide layers comprise sputtered hafnium dioxide.

15. The optical component of claim 10 wherein the planarization layer comprises hafnium dioxide (HfO 2 ).

16. The optical component of claim 10 wherein the planarization layer comprises at least one of tantala (Ta 2 O 5 ) or zirconia (ZrO 2 ).

17. The optical component of claim 10 , wherein the optical component comprises a laser mirror.

18. A laser mirror comprising:

a substrate having at least an about one micron size nodule thereon, wherein a surface of the nodule projects above an upper surface of the substrate;

a planarization layer disposed over a surface of the substrate and over the nodule, the planarization layer comprised of a material that flows over and around the nodule to fully cover the nodule while producing a new surface layer substantially flat and co-planar with the upper surface, without requiring subsequent etching to produce the new surface layer;

the planarization layer being formed from a first layer of silicon dioxide; and

an alternating sequence of additional layers of silicon dioxide and hafnium dioxide disposed on the planarization layer.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 18, 2020
From: MENONI, CARMEN S; PATEL, DINESH C
To: COLORADO STATE UNIVERSITY RESEARCH FOUNDATION
Reel/Frame 052980/0048 →
CONFIRMATORY LICENSE Recorded Mar 29, 2019
From: LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
To: U.S. DEPARTMENT OF ENERGY
Reel/Frame 048749/0564 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 11, 2019
From: STOLTZ, CHRISTOPHER J.; FOLTA, JAMES A.; MIRKARIMI, PAUL B.; SOUFLI, REGINA; WALTON, CHRISTOPHER CHARLES; WOLFE, JUSTIN
To: LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
Reel/Frame 048565/0070 →
Continuity (3)
Division 14434699
Provisional Application 61713332 · Oct 12, 2012
Related Publication 20190162879A1 · May 30, 2019