Method of manufacturing a semiconductor device
In a method of manufacturing a semiconductor device, a fin structure is formed over a substrate. The fin structure is sculpted to have a plurality of non-etched portions and a plurality of etched portions having a narrower width than the plurality of non-etched portions. The sculpted fin structure is oxidized so that a plurality of nanowires are formed in the plurality of non-etched portions, respectively, and the plurality of etched portions are oxidized to form oxides. The plurality of nanowires are released by removing the oxides.
1. A semiconductor device, comprising:
a plurality of semiconductor wires;
a bottom fin structure protruding from a semiconductor substrate, over which the plurality of semiconductor wires are disposed;
a gate dielectric layer wrapping around each of the plurality of semiconductor wires;
a gate electrode layer disposed over the gate dielectric layer;
a source/drain region which is a source/drain semiconductor fin structure;
an isolation insulating layer from which the source/drain semiconductor fin structure protrudes; and
sidewall spacers disposed on opposite side faces of the gate electrode layer,
wherein the source/drain semiconductor fin structure has first portions and second portions having narrow widths than the first portions alternately arranged, and
the bottom fin structure, the first portions and the second portions are continuously formed of a same semiconductor material.
2. The semiconductor device of claim 1 , wherein a cross sectional shape of an uppermost one of the plurality of semiconductor wires has a tear-drop shape and has a largest area among the plurality of semiconductor wires.
3. The semiconductor device of claim 2 , wherein a cross sectional shape of a bottommost one of the plurality of semiconductor wires has a smallest area among the plurality of semiconductor wires.
4. The semiconductor device of claim 1 , further comprising a source/drain epitaxial layer wrapping the source/drain semiconductor fin structure.
5. The semiconductor device of claim 1 , wherein the first portions and second portions extend under one of the sidewall spacers.
6. The semiconductor device of claim 1 , further comprising:
a dielectric layer, different from the gate dielectric layer, disposed between the gate electrode layer and the isolation insulating layer,
wherein the dielectric layer is made of a different material than the sidewall spacers.
7. The semiconductor device of claim 1 , wherein the gate dielectric layer is disposed on a top of the bottom fin structure.
8. The semiconductor device of claim 7 , wherein the top of the bottom fin structure is rounded.
9. The semiconductor device of claim 1 , wherein the plurality of semiconductor wires are formed of the same material as the bottom fin structure, the first portions and the second portions.
10. A semiconductor device, comprising:
a plurality of semiconductor wires;
a bottom fin structure protruding from a semiconductor substrate, over which the plurality of semiconductor wires are disposed;
a gate dielectric layer wrapping around each of the plurality of semiconductor wires;
a gate electrode layer disposed over the gate dielectric layer;
a source/drain region;
an isolation insulating layer; and
sidewall spacers disposed on opposite side faces of the gate electrode layer, wherein:
the source/drain region include a fin having first portions and second portions having narrow widths than the first portions alternately arranged,
the bottom fin structure, the first portions and the second portions are formed of a same semiconductor material,
the first portions and second portions are continuously formed of the same semiconductor material,
the fin is disposed over the bottom fin structure, and
an insulating layer is disposed between a bottommost one of the plurality of semiconductor wires and the bottom fin structure.
11. The semiconductor device of claim 10 , wherein a cross sectional shape of an uppermost one of the plurality of semiconductor wires has a tear-drop shape and has a largest area among the plurality of semiconductor wires.
12. The semiconductor device of claim 11 , wherein a cross sectional shape of a bottommost one of the plurality of semiconductor wires has a smallest area among the plurality of semiconductor wires.
13. The semiconductor device of claim 11 , wherein remaining ones of the plurality of semiconductor wires have a circular shape.
14. The semiconductor device of claim 10 , further comprising a source/drain epitaxial layer wrapping the fin.
15. The semiconductor device of claim 10 , wherein the first portions and second portions extend under one of the sidewall spacers.
16. The semiconductor device of claim 10 , further comprising:
a dielectric layer, different from the gate dielectric layer, disposed between the gate electrode layer and the isolation insulating layer,
wherein the dielectric layer is made of a different material than the sidewall spacers.
17. The semiconductor device of claim 10 , wherein the bottom fin structure and a bottom part of the fin are continuously formed.
18. The semiconductor device of claim 17 , wherein the gate dielectric layer is disposed on a top of the bottom fin structure.
19. The semiconductor device of claim 18 , wherein the top of the bottom fin structure is rounded.
20. A semiconductor device, comprising:
a plurality of semiconductor wires;
a bottom fin structure protruding from a semiconductor substrate, over which the plurality of semiconductor wires are disposed;
a gate dielectric layer wrapping around each of the plurality of semiconductor wires;
a gate electrode layer disposed over the gate dielectric layer; and
a source/drain region which is a source/drain semiconductor fin structure,
wherein the source/drain semiconductor fin structure has first portions and second portions having narrow widths than the first portions alternately arranged,
the bottom fin structure, the first portions and the second portions are continuously formed of a same semiconductor material, and
a upper most portion of the source/drain semiconductor fin structure is one of the first portions.