Semiconductor package and board for mounting the same
A semiconductor package includes a semiconductor chip having an active surface on which connection pads are disposed and an inactive surface opposing the active surface, an encapsulant disposed to cover at least a portion of the semiconductor chip, and a connection member including a redistribution layer. The redistribution layer includes a plurality of first pads, a plurality of second pads surrounding the plurality of first pads, and a plurality of third pads surrounding the plurality of second pads. Each of the plurality of second pads and each of the plurality of third pads have shapes different from a shape of each of the plurality of first pads. Gaps between the plurality of second pads and gaps between the plurality of third pads are staggered with each other.
1. A semiconductor package comprising:
a semiconductor chip having an active surface on which connection pads are disposed and an inactive surface opposing the active surface;
an encapsulant covering at least a portion of the semiconductor chip; and
a connection member disposed on the encapsulant and the active surface of the semiconductor chip, the connection member including a redistribution layer,
wherein the redistribution layer includes a plurality of first pads, a plurality of second pads disposed along a circumference of the connection member to surround the plurality of first pads, and a plurality of third pads disposed along the circumference of the connection member to surround the plurality of second pads, and
in an extending direction of the circumference of the connection member, gaps between the plurality of second pads and gaps between the plurality of third pads are staggered with each other.
2. The semiconductor package of claim 1 , wherein each of the plurality of second pads and each of the plurality of third pads have shapes different from a shape of each of the plurality of first pads.
3. The semiconductor package of claim 1 , wherein each of the plurality of second pads and each of the plurality of third pads have predetermined lengths along the circumference of the connection member, and
the predetermined lengths are greater than widths of the gaps of the plurality of second pads and the gaps of the plurality of third pads.
4. The semiconductor package of claim 3 , wherein each of the plurality of first pads has a circular shape.
5. The semiconductor package of claim 1 , wherein the plurality of third pads have at least one gap disposed in at least one corner of the connection member, and
at least one of the plurality of second pads is disposed the corner of the connection member at which the at least one gap of the plurality of third pads is disposed.
6. The semiconductor package of claim 1 , wherein at least one of the plurality of first pads is electrically connected to a connection pad for a signal among the connection pads, and
each of the plurality of second pads and each of the plurality of third pads are electrically connected to a connection pad for a ground among the connection pads.
7. The semiconductor package of claim 1 , wherein at least one of the plurality of first pads is electrically connected to a connection pad for a signal among the connection pads, and
each of one of the plurality of second pads and the plurality of third pads is electrically connected to ground connection pads among the connection pads.
8. The semiconductor package of claim 1 , further comprising:
a plurality of electrical connection metal bumps disposed on the connection member and electrically connected to the plurality of first pads, respectively;
a plurality of first shield-dams disposed on the connection member and electrically connected to the plurality of second pads, respectively; and
a plurality of second shield-dams disposed on the connection member and electrically connected to the plurality of third pads, respectively,
wherein in the extending direction of the circumference of the connection member, gaps between the plurality of first shield-dams and gaps between the plurality of second shield-dams are staggered with each other.
9. The semiconductor package of claim 8 , wherein each of the plurality of first shield-dams and each of the plurality second shield-dams have dam shapes having predetermined lengths along the circumference of the connection member, and
the predetermined lengths are greater than widths of the gaps of the plurality of first shield-dams and the gaps of the plurality of second shield-dams, respectively.
10. The semiconductor package of claim 9 , wherein each of the plurality of electrical connection metal bumps has a ball shape.
11. The semiconductor package of claim 8 , wherein the plurality of second shield-dams have at least one gap disposed in at least one corner of the connection member, and
at least one of the plurality of first shield-dams is disposed at the corner of the connection member at which the at least one gap of the plurality of second shield-dams is disposed.
12. The semiconductor package of claim 8 , wherein at least one of the plurality of electrical connection metal bumps is electrically connected to a connection pad for a signal among the connection pads, and
each of the plurality of first shield-dams and each of the plurality of second shield-dams are electrically connected to a connection pad for a ground among the connection pads.
13. The semiconductor package of claim 12 , wherein at least one of the plurality of electrical connection metal bumps is electrically connected to a connection pad for a signal among the connection pads, and
each of one of the plurality of first shield-dams and one of the plurality of second shield-dams is electrically connected to ground connection pads among the connection pads.
14. The semiconductor package of claim 8 , wherein each of the plurality of electrical connection metal bumps and each of the plurality of first shield-dams and the plurality of second shield-dams include a low-melting point metal including tin (Sn) or a tin (Sn)-containing alloy.
15. The semiconductor package of claim 8 , wherein each of the plurality of electrical connection metal bumps, each of the plurality of first shield-dams, and each of the plurality of second shield-dams are disposed side by side at the same level.
16. The semiconductor package of claim 8 , wherein in a direction perpendicular to the circumference of the connection member, the gaps between the plurality of second shield-dams respectively overlay within one or more of the plurality of first shield-dams and the gaps between the plurality of first shield-dams overlay within one or more of the plurality of second shield-dams.
17. The semiconductor package of claim 1 , wherein in a direction perpendicular to the circumference of the connection member, the gaps between the plurality of second pads overlay within one or more of the plurality of third pads and the gaps between the plurality of third pads overlay within one or more of the plurality of second pads.
18. The semiconductor package of claim 1 , wherein the connection member includes a plurality of redistribution layer disposed on different levels with respect to the active surface of the semiconductor chip, and
the redistribution layer, which includes the plurality of first pads, the plurality of second pads, and the plurality of third pads, is one farthest away from the active surface among the plurality of redistribution layer.
19. The semiconductor package of claim 1 , further comprising:
a frame having a first through-hole in which the semiconductor chip is disposed; and
a backside metal layer disposed on the inactive surface of the semiconductor chip and electrically connected to metal layers disposed on surfaces of the frame through a backside metal via penetrating the encapsulant.
20. The semiconductor package of claim 19 , wherein the backside metal layer is electrically connected to the plurality of second pads and the plurality of third pads.
21. The semiconductor package of claim 19 , wherein the frame further includes a second through-hole in which a passive component is disposed, and
the encapsulant includes a first encapsulant encapsulating the passive component and filling at least a portion of the second through-hole, and a second encapsulant encapsulating the semiconductor chip, filling at least a portion of the first through-hole, and encapsulating the first encapsulant.
22. A semiconductor package comprising:
a semiconductor chip having an active surface on which connection pads are disposed and an inactive surface opposing the active surface;
an encapsulant covering at least a portion of the semiconductor chip; and
a connection member disposed on the encapsulant and the active surface of the semiconductor chip, the connection member including a redistribution layer,
wherein the redistribution layer includes a plurality of first pads, a plurality of second pads spaced apart from each other by first gaps and surrounding the plurality of first pads, and a plurality of third pads spaced apart from each by second gaps other and surrounding the plurality of second pads, and
one of the plurality of second pads is disposed between the plurality of first pads and one of the second gaps.
23. The semiconductor package of claim 22 , wherein one of the first gaps is disposed between the plurality of first pads and one of the third pads.
24. The semiconductor package of claim 22 , wherein another of the second gaps is disposed in at least one corner of the connection member, and
at least one of the plurality of second pads is disposed the corner of the connection member at which the another of the second gaps is disposed.
25. The semiconductor package of claim 22 , wherein each of the plurality of second pads and each of the plurality of third pads have shapes different from a shape of each of the plurality of first pads.
26. The semiconductor package of claim 22 , wherein each of the plurality of second pads and each of the plurality of third pads have predetermined lengths along the circumference of the connection member, and
the predetermined lengths are greater than widths of the first gaps of the plurality of second pads and the second gaps of the plurality of third pads.
27. The semiconductor package of claim 22 , further comprising:
a plurality of electrical connection metal bumps disposed on the connection member and electrically connected to the plurality of first pads, respectively;
a plurality of first shield-dams disposed on the connection member, spaced apart from each other by third gaps, and electrically connected to the plurality of second pads, respectively; and
a plurality of second shield-dams disposed on the connection member, spaced apart from each other by fourth gaps, and electrically connected to the plurality of third pads, respectively,
wherein one of the plurality of first shield-dams is disposed between the plurality of electrical connection metal bumps and one of the fourth gaps.
28. The semiconductor package of claim 27 , wherein one of the third gaps is disposed between the plurality of electrical connection metal bumps and one of the plurality of second shield-dams.