Germanium condensation for replacement metal gate devices with silicon germanium channel
A semiconductor structure and a method for fabricating the same. The structure includes a substrate and at least one semiconductor fin. The semiconductor structure further includes a channel region within the semiconductor fin. The channel region includes a higher content of germanium than remaining portions of the semiconductor fin. The semiconductor structure also includes a gate stack in contact with the semiconductor fin. The method includes removing a dummy gate formed on at least one semiconductor fin. The removal of the dummy gate exposes a channel region of the semiconductor fin. A germanium dioxide layer is formed in contact with the channel region. A condensation process is performed after the germanium dioxide layer has been formed. The condensation process increases germanium content only in the channel region.
1. A semiconductor structure comprising:
a substrate;
at least one semiconductor fin;
a channel region within the semiconductor fin, wherein the channel region comprises a higher content of germanium than remaining portions of the semiconductor fin; and
a gate stack in contact with the semiconductor fin and comprising at least a gate insulating layer, wherein the channel region comprising the higher content of germanium extends laterally beyond sidewalls of the gate stack.
2. The semiconductor structure of claim 1 , wherein the semiconductor fin comprises silicon germanium, and wherein the channel region comprises a germanium content of at least forty percent, and wherein one or more remaining portions of the semiconductor fin comprise a germanium content of thirty percent or less.
3. The semiconductor structure of claim 1 , further comprising:
a spacer surrounding the gate stack.
4. The semiconductor structure of claim 1 , wherein the gate stack further comprises at least:
a gate conductor.
5. The semiconductor structure of claim 4 , wherein the gate stack further comprises:
an interfacial layer in contact with the channel region and the insulating layer.
6. The semiconductor structure of claim 4 , wherein the gate stack further comprises:
a work-function layer in contact with the insulating layer and the gate conductor.
7. The semiconductor structure of claim 1 , wherein the substrate comprises a punch through stopper, and wherein the semiconductor fin is free of the punch through stopper.
8. An integrated circuit comprising:
a semiconductor device, wherein the semiconductor device comprises
a substrate,
at least one semiconductor fin,
a channel region within the semiconductor fin, wherein the channel region comprises a higher content of germanium than remaining portions of the semiconductor fin, and
a gate stack in contact with the semiconductor fin and comprising at least a gate insulating layer, wherein the channel region comprising the higher content of germanium extends laterally beyond sidewalls of the gate stack.
9. The integrated circuit of claim 8 , wherein the semiconductor fin comprises silicon germanium, and wherein the channel region comprises a germanium content of at least forty percent, and wherein one or more remaining portions of the semiconductor fin comprise a germanium content of thirty percent or less.
10. The integrated circuit of claim 8 , wherein the semiconductor device further comprises
a spacer surrounding the gate stack.
11. The integrated circuit of claim 8 , wherein the gate stack further comprises at least:
a gate conductor.
12. The integrated circuit of claim 11 , wherein the gate stack further comprises:
an interfacial layer in contact with the channel region and the insulating layer.
13. The integrated circuit of claim 11 , wherein the gate stack further comprises:
a work-function layer in contact with the insulating layer and the gate conductor.
14. A semiconductor structure comprising:
a substrate;
at least one semiconductor fin;
a channel region within the semiconductor fin, wherein the channel region comprises a higher content of germanium than remaining portions of the semiconductor fin;
a gate stack in contact with the semiconductor fin; and
a spacer surrounding the gate stack, wherein the gate stack extends below the spacer, and wherein the channel region comprising the higher content of germanium extends laterally beyond sidewalls of the gate stack.
15. The semiconductor structure of claim 14 , wherein the semiconductor fin comprises silicon germanium, and wherein the channel region comprises a germanium content of at least forty percent, and wherein one or more remaining portions of the semiconductor fin comprise a germanium content of thirty percent or less.
16. The semiconductor structure of claim 14 , wherein the gate stack comprises at least:
an insulating layer; and
a gate conductor.
17. The semiconductor structure of claim 16 , wherein the gate stack further comprises:
an interfacial layer in contact with the channel region and the insulating layer.
18. The semiconductor structure of claim 17 , wherein the interfacial layer is formed below and in contact with a bottom surface of the spacer.
19. The semiconductor structure of claim 16 , wherein the gate stack further comprises:
a work-function layer in contact with the insulating layer and the gate conductor.
20. The semiconductor structure of claim 14 , wherein the substrate comprises a punch through stopper, and wherein the semiconductor fin is free of the punch through stopper.