High mobility strained channels for fin-based NMOS transistors
Techniques are disclosed for incorporating high mobility strained channels into fin-based NMOS transistors (e.g., FinFETs such as double-gate, trigate, etc), wherein a stress material is cladded onto the channel area of the fin. In one example embodiment, a germanium or silicon germanium film is cladded onto silicon fins in order to provide a desired tensile strain in the core of the fin, although other fin and cladding materials can be used. The techniques are compatible with typical process flows, and cladding deposition can occur at a plurality of locations within typical process flow. In various embodiments, fins may be formed with a minimum width (or later thinned) so as to improve transistor performance. In some embodiments, a thinned fin also increases tensile strain across the core of a cladded fin. In some cases, strain in the core may be further enhanced by adding an embedded silicon epitaxial source and drain.
1. An integrated circuit, comprising:
a source region;
a drain region;
a channel structure between the source and drain regions and including silicon;
a layer including germanium and over the channel structure, the layer having a thickness of 2 nanometers (nm) or less, wherein the channel structure includes tensile strain and has a width of 4 nm or less between two portions of the layer; and
a gate structure above the channel structure, the gate structure including a gate electrode and a gate dielectric, the gate dielectric between the layer and the gate electrode.
2. The integrated circuit of claim 1 , wherein the channel structure comprises a fin that includes silicon.
3. The integrated circuit of claim 2 , wherein the fin is configured with a <110> channel orientation.
4. The integrated circuit of claim 1 , wherein the channel structure comprises a nanowire that includes silicon.
5. The integrated circuit of claim 1 , wherein the channel structure comprises a nanoribbon that includes silicon.
6. The integrated circuit of claim 1 , wherein at least one of the source and drain regions comprise N+ doped semiconductor material.
7. The integrated circuit of claim 6 , wherein one or both the source and drain regions comprise one or more semiconductor materials not included in the channel structure.
8. The integrated circuit of claim 1 , wherein the layer is comprised of between 10 atomic % to 90 atomic % germanium.
9. The integrated circuit of claim 1 , wherein the layer covers opposing side portions and a top portion of the channel structure.
10. The integrated circuit of claim 1 , wherein the layer has a thickness of 2 nm or less.
11. A mobile computing system comprising the integrated circuit of claim 1 .
12. An integrated circuit, comprising:
a fin structure including silicon;
a gate structure adjacent to but not directly on top and side walls of a portion of the fin structure, the gate structure including a gate electrode and a gate dielectric, the gate dielectric between the fin structure and the gate electrode;
a layer including germanium, the layer directly on the top and side walls of the portion of the fin structure so as to be at least between the gate dielectric and the portion of the fin structure, the layer having a thickness of 2 nanometers (nm) or less, wherein the fin structure has a width of 4 nm or less between first and second portions of the layer, the first and second portions on the side walls of the portion of the fin structure; and
a source region and a drain region, the portion of the fin structure between the source and drain regions.
13. The integrated circuit of claim 12 , wherein the fin structure is configured with a <110> channel orientation.
14. The integrated circuit of claim 12 , wherein the source and drain regions comprise N+ doped semiconductor material.
15. The integrated circuit of claim 12 , wherein the source and drain regions comprise at least one semiconductor material that is not silicon.
16. The integrated circuit of claim 12 , wherein the layer is comprised of between 10 atomic % to 90 atomic % germanium.
17. An integrated circuit, comprising:
a nanowire or nanoribbon including silicon;
a gate structure wrapped around but not directly on at least a portion of the nanowire or nanoribbon, the gate structure including a gate electrode and a gate dielectric, the gate dielectric between the gate electrode and the nanowire or nanoribbon;
a layer including germanium, the layer directly on and wrapped around the portion of the nanowire or nanoribbon so as to be at least between the gate dielectric and the portion of the nanowire or nanoribbon, the layer having a thickness of 2 nanometers (nm) or less, wherein the nanowire or nanoribbon has a width of 4 nm or less between first and second portions of the layer, the first and second portions on opposing sides of the portion of the nanowire or nanoribbon; and
a source region and a drain region, the nanowire or nanoribbon between the source and drain regions.
18. The integrated circuit of claim 17 , wherein the nanowire or nanoribbon is configured with a <110> channel orientation.
19. The integrated circuit of claim 17 , wherein the source and drain regions comprise N+ doped semiconductor material, the N+ doped semiconductor material comprising at least one semiconductor material that is not silicon.
20. The integrated circuit of claim 17 , wherein the layer is comprised of between 10 atomic % to 90 atomic % germanium.