Patent Assignment
Reel/Frame 060392/0603
Assignment of Assignor's Interest
Recorded: 2022-06-06
Pages: 7
Assignor
INTEL CORPORATION
Executed: 2022-06-03
Assignee
DAEDALUS PRIME LLC
51 PONDFIELD ROAD, BRONXVILLE, NEW YORK, 10708
Covered Properties
(75)
Method for Making a Semiconductor Device with a High-K Gate Dielectric and a Metal Gate Electrode
System Security Agent Authentication and Alert Distribution
Self-Aligned Contacts for Transistors
Metal Gate Device with Reduced Oxidation of a High-K Gate Dielectric
Metal Gate Device with Reduced Oxidation of a High-K Gate Dielectric
Application:
12/353,766 →
Publication:
US 2009/0179282
Method and Device for Controlling Use of Context Information of a User
System Security Agent Authentication and Alert Distribution
Device, System and Method of Simultaneously Communicating with a Group of Wireless Communication Devices
Device, System and Method of Indicating Station-Specific Information Within a Wireless Communication
Transistors with High Concentration of Boron Doped Germanium
Radio Based Location Power Profiles
Secure on-Line Sign-Up and Provisioning for Wi-Fi Hotspots Using a Device-Management Protocol
Intelligent Location Tagging for Determinstic Device Behavior
Small Data Transmission Techniques in a Wireless Communication Network
Multi-RAT Carrier Aggregation for Integrated WWAN-WLAN Operation
Multi-Rat Carrier Aggregation for Integrated Wwan-Wlan Operation
Mobile Network Operator and Data Service Provider Interoperation
Mechanism to Prevent Load in 3GPP Network Due to Mtc Device Triggers
Scalable Transmission or Device Trigger Requests
Cobalt Based Interconnects and Methods of Fabrication Thereof
Apparatus, System and Method of Commnicating a Sounding Feedback Sequence for Explicit Beamforming Training
Application:
13/738,162 →
Publication:
US 2013/0128837
Cmos Implementation of Germanium and Iii-V Nanowires and Nanoribbons in Gate-All-Around Architecture
Systems and Methods for Implementing a Peer-to-Peer Connection
Systems and Methods for Implementing Peer-to-Peer Wireless Connections
Contact Resistance Reduction Employing Germanium Overlayer Pre-Contact Metalization
Selective Germanium P-Contact Metalization Through Trench
Column Iv Transistors for Pmos Integration
Avd Hardmask for Damascene Patterning
Device to Device (D2D) Communication Mechanisms
Multi-Rat Carrier Aggregation for Integrated Wwan-Wlan Operation
Mechanism to Prevent Load in 3GPP Network Due to Mtc Device Triggers
Device, System and Method of Indicating Station-Specific Information Within a Wireless Communication
Transistors with High Concentration of Boron Doped Germanium
Radio Based Location Power Profiles
Contact Resistance Reduction Employing Germanium Overlayer Pre-Contact Metalization
Cmos Implementation of Germanium and Iii-V Nanowires and Nanoribbons in Gate-All-Around Architecture
Selective Germanium P-Contact Metalization Through Trench
Methods of Forming Dislocation Enhanced Strain in Nmos Structures
Mechanism to Prevent Load in 3GPP Network Due to Mtc Device Triggers
CMOS FinFET Device having Strained SiGe Fins and a Strained Si Cladding Layer on the NMOS channel
Self-Aligned Gate Edge and Local Interconnect and Method to Fabricate Same
High Mobility Strained Channels for Fin-Based Nmos Transistors
Selective Germanium P-Contact Metalization Through Trench
Radio Based Location Power Profiles
Column Iv Transistors for Pmos Integration
Avd Hardmask for Damascene Patterning
Contact Resistance Reduction Employing Germanium Overlayer Pre-Contact Metalization
Secure on-Line Sign-Up and Provisioning for Wi-Fi Hotspots Using a Device-Management Protocol
Transistors with High Concentration of Germanium
Application:
15/489,569 →
Publication:
US 2017/0221724
Cmos Implementation of Germanium and Iii-V Nanowires and Nanoribbons in Gate-All-Around Architecture
Selective Germanium P-Contact Metalization Through Trench
Avd Hardmask for Damascene Patterning
Self-Aligned Gate Edge and Local Interconnect and Method to Fabricate Same
Radio Based Location Power Profiles
Transistor Devices Having Source/Drain Structure Configured with High Germanium Content Portion
Method of Fabricating a Semiconductor Device with Strained Sige Fins and a Si Cladding Layer
High Mobility Strained Channels for Fin-Based Nmos Transistors
Cmos Implementation of Germanium and Iii-V Nanowires and Nanoribbons in Gate-All-Around Architecture
Self-Aligned Gate Edge and Local Interconnect
Selective Germanium P-Contact Metalization Through Trench
Contact Resistance Reduction Employing Germanium Overlayer Pre-Contact Metalization
Methods of Forming Dislocation Enhanced Strain in Nmos Structures
Transistors with High Concentration of Germanium
Selective Germanium P-Contact Metalization Through Trench
Contact Resistance Reduction Employing Germanium Overlayer Pre-Contact Metalization
High Mobility Strained Channels for Fin-Based Nmos Transistors
Application:
16/998,382 →
Publication:
US 2020/0381549
Self-Aligned Gate Edge and Local Interconnect
Column Iv Transistors for Pmos Integration
Methods of Forming Dislocation Enhanced Strain in Nmos Structures
Application:
17/389,611 →
Method of Fabricating CMOS FinFETs by Selectively Etching a Strained SiGe Layer
Methods of Forming Dislocation Enhanced Strain in Nmos and Pmos Structures
Contact Resistance Reduction Employing Germanium Overlayer Pre-Contact Metalization
Transistor Devices Having Source/Drain Structure Configured with High Germanium Content Portion
Application:
17/667,821 →
Publication:
US 2022/0271125
Methods of Forming Dislocation Enhanced Strain in Nmos and Pmos Structures
Advanced Wireless Communication Systems and Techniques
Application:
61/542,726 →
Related Assignments
(21)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Dec 7, 2004
From: BRASK, JUSTIN; PAE, SANGWOO; KAVALIEROS, JACK; METZ, MATTHEW V.
To: INTEL CORPORATION
Reel/Frame 016073/0928 →
Assignment of Assignor's Interest
Dec 30, 2004
From: ROSS, ALAN D.; MORGAN, DENNIS M.
To: INTEL CORPORATION
Reel/Frame 016151/0797 →
Assignment of Assignor's Interest
Mar 31, 2005
From: CHANG, PETER L.D.; DOYLE, BRIAN S.
To: INTEL CORPORATION
Reel/Frame 016453/0789 →
Assignment of Assignor's Interest
Jun 21, 2005
From: DOYLE, BRIAN S.; KASVALIEROS, JACK; BRASK, JUSTIN K.; METZ, MATTHEW V.
To: INTEL CORPORATION
Reel/Frame 016718/0342 →
Assignment of Assignor's Interest
Jan 25, 2010
From: GONG, MICHELLE X.; STACEY, ROBERT J.
To: INTEL CORPORATION
Reel/Frame 023836/0991 →
Assignment of Assignor's Interest
Jun 9, 2010
From: TRAININ, SOLOMON; KASHER, ASSAF
To: INTEL CORPORATION
Reel/Frame 024507/0176 →
Assignment of Assignor's Interest
Oct 19, 2010
From: KOHLENBERG, TOBIAS; AISSI, SELIM; MORGAN, DENNIS M.; ROSS, ALAN D.
To: INTEL CORPORATION
Reel/Frame 025157/0332 →
Assignment of Assignor's Interest
Jan 27, 2011
From: MURTHY, ANAND S.; GLASS, GLENN A.; GHANI, TAHIR; PILLARISETTY, RAVI
To: INTEL CORPORATION
Reel/Frame 025707/0633 →
Assignment of Assignor's Interest
Jan 27, 2011
From: MURTHY, ANAND S.; GLASS, GLENN A.; GHANI, TAHIR; PILLARISETTY, RAVI
To: INTEL CORPORATION
Reel/Frame 025707/0505 →
Assignment of Assignor's Interest
Jun 27, 2012
From: JAIN, PUNEET K.; KEDALAGUDDE, MEGHASHREE DATTATRI; VENKATACHALAM, MUTHAIAH
To: INTEL CORPORATION
Reel/Frame 028455/0907 →
Assignment of Assignor's Interest
Jul 19, 2012
From: GUPTA, VIVEK; CANPOLAT, NECATI
To: INTEL CORPORATION
Reel/Frame 028589/0444 →
Assignment of Assignor's Interest
Aug 15, 2012
From: GUPTA, VIVEK
To: INTEL CORPORATION
Reel/Frame 028794/0011 →
Assignment of Assignor's Interest
Sep 5, 2012
From: TRAYNOR, KEVIN; GRAY, MARK D.
To: INTEL CORPORATION
Reel/Frame 028898/0199 →
Assignment of Assignor's Interest
Sep 11, 2012
From: JAIN, PUNEET K.; VENKATACHALAM, MUTHAIAH
To: INTEL CORPORATION
Reel/Frame 028933/0134 →
Assignment of Assignor's Interest
Sep 18, 2012
From: GUPTA, VIVEK; ETEMAD, KAMRAN
To: INTEL CORPORATION
Reel/Frame 028977/0409 →
Assignment of Assignor's Interest
Sep 18, 2012
From: GUPTA, VIVEK; ETEMAD, KAMRAN
To: INTEL CORPORATION
Reel/Frame 028977/0451 →
Assignment of Assignor's Interest
Jan 31, 2023
From: DAEDALUS PRIME LLC
To: TAASERA LICENSING LLC
Reel/Frame 062548/0088 →
Assignment of Assignor's Interest
Feb 13, 2023
From: INTEL CORPORATION
To: DAEDALUS PRIME LLC
Reel/Frame 062746/0654 →
Corrective Assignment to Correct the Us Patent 10,592,626 Should Have Been Identified as 10,593,626. Previously Recorded on Reel 060392 Frame 0603. Assignor(S) Hereby Confirms the Assignment.
May 18, 2023
From: INTEL CORPORATION
To: DAEDALUS PRIME LLC
Reel/Frame 063695/0134 →
Assignment of Assignor's Interest
Aug 1, 2024
From: DAEDALUS PRIME LLC
To: K.MIZRA LLC
Reel/Frame 068157/0512 →
Assignment of Assignor's Interest
Dec 12, 2025
From: DAEDALUS PRIME LLC
To: MEDIATEK INC.
Reel/Frame 073948/0951 →