Patent Assignment
Reel/Frame 073948/0951
Assignment of Assignor's Interest
Recorded: 2025-12-12
Pages: 24
Assignor
DAEDALUS PRIME LLC
Executed: 2025-12-01
Assignee
MEDIATEK INC.
NO. 1, DUSING 1ST RD., HSINCHU SCIENCE PARK, HSINCHU CITY, 30078, TAIWAN
Covered Properties
(56)
Self-Aligned Contacts for Transistors
Metal Gate Device with Reduced Oxidation of a High-K Gate Dielectric
Method and Device for Controlling Use of Context Information of a User
Transistors with High Concentration of Boron Doped Germanium
Secure on-Line Sign-Up and Provisioning for Wi-Fi Hotspots Using a Device-Management Protocol
Cobalt Based Interconnects and Methods of Fabrication Thereof
Cmos Implementation of Germanium and Iii-V Nanowires and Nanoribbons in Gate-All-Around Architecture
Contact Resistance Reduction Employing Germanium Overlayer Pre-Contact Metalization
Selective Germanium P-Contact Metalization Through Trench
Column Iv Transistors for Pmos Integration
Methods and Apparatuses to Form Self-Aligned Caps
Capping Dielectric Structure for Transistor Gates
Avd Hardmask for Damascene Patterning
Transistors with High Concentration of Boron Doped Germanium
Contact Resistance Reduction Employing Germanium Overlayer Pre-Contact Metalization
Methods and Apparatuses to Form Self-Aligned Caps
Cmos Implementation of Germanium and Iii-V Nanowires and Nanoribbons in Gate-All-Around Architecture
Selective Germanium P-Contact Metalization Through Trench
Methods of Forming Dislocation Enhanced Strain in Nmos Structures
Capping Dielectric Structures for Transistor Gates
CMOS FinFET Device having Strained SiGe Fins and a Strained Si Cladding Layer on the NMOS channel
Self-Aligned Gate Edge and Local Interconnect and Method to Fabricate Same
Techniques for Integration of Ge-Rich P-Mos Source/Drain
High Mobility Strained Channels for Fin-Based Nmos Transistors
Selective Germanium P-Contact Metalization Through Trench
Column Iv Transistors for Pmos Integration
Avd Hardmask for Damascene Patterning
Contact Resistance Reduction Employing Germanium Overlayer Pre-Contact Metalization
Secure on-Line Sign-Up and Provisioning for Wi-Fi Hotspots Using a Device-Management Protocol
Methods and Apparatuses to Form Self-Aligned Caps
Cmos Implementation of Germanium and Iii-V Nanowires and Nanoribbons in Gate-All-Around Architecture
Selective Germanium P-Contact Metalization Through Trench
Avd Hardmask for Damascene Patterning
Self-Aligned Gate Edge and Local Interconnect and Method to Fabricate Same
Techniques for Integration of Ge-Rich P-Mos Source/Drain
Transistor Devices Having Source/Drain Structure Configured with High Germanium Content Portion
Method of Fabricating a Semiconductor Device with Strained Sige Fins and a Si Cladding Layer
Techniques for Integration of Ge-Rich P-Mos Source/Drain
High Mobility Strained Channels for Fin-Based Nmos Transistors
Cmos Implementation of Germanium and Iii-V Nanowires and Nanoribbons in Gate-All-Around Architecture
Self-Aligned Gate Edge and Local Interconnect
Selective Germanium P-Contact Metalization Through Trench
Contact Resistance Reduction Employing Germanium Overlayer Pre-Contact Metalization
Methods of Forming Dislocation Enhanced Strain in Nmos Structures
Methods and Apparatuses to Form Self-Aligned Caps
Transistors with High Concentration of Germanium
Selective Germanium P-Contact Metalization Through Trench
Contact Resistance Reduction Employing Germanium Overlayer Pre-Contact Metalization
Self-Aligned Gate Edge and Local Interconnect
Column Iv Transistors for Pmos Integration
Method of Fabricating CMOS FinFETs by Selectively Etching a Strained SiGe Layer
Methods of Forming Dislocation Enhanced Strain in Nmos and Pmos Structures
Contact Resistance Reduction Employing Germanium Overlayer Pre-Contact Metalization
Methods of Forming Dislocation Enhanced Strain in Nmos and Pmos Structures
Methods of Forming Dislocation Enhanced Strain in Nmos and Pmos Structures
Self-Aligned Gate Edge and Local Interconnect
Application:
18/068,826 →
Publication:
US 2023/0178594
Related Assignments
(17)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Mar 31, 2005
From: CHANG, PETER L.D.; DOYLE, BRIAN S.
To: INTEL CORPORATION
Reel/Frame 016453/0789 →
Assignment of Assignor's Interest
Jun 21, 2005
From: DOYLE, BRIAN S.; KASVALIEROS, JACK; BRASK, JUSTIN K.; METZ, MATTHEW V.
To: INTEL CORPORATION
Reel/Frame 016718/0342 →
Assignment of Assignor's Interest
Oct 19, 2010
From: KOHLENBERG, TOBIAS; AISSI, SELIM; MORGAN, DENNIS M.; ROSS, ALAN D.
To: INTEL CORPORATION
Reel/Frame 025157/0332 →
Assignment of Assignor's Interest
Jan 27, 2011
From: MURTHY, ANAND S.; GLASS, GLENN A.; GHANI, TAHIR; PILLARISETTY, RAVI
To: INTEL CORPORATION
Reel/Frame 025707/0633 →
Assignment of Assignor's Interest
Jan 27, 2011
From: MURTHY, ANAND S.; GLASS, GLENN A.; GHANI, TAHIR; PILLARISETTY, RAVI
To: INTEL CORPORATION
Reel/Frame 025707/0505 →
Assignment of Assignor's Interest
Jul 19, 2012
From: GUPTA, VIVEK; CANPOLAT, NECATI
To: INTEL CORPORATION
Reel/Frame 028589/0444 →
Assignment of Assignor's Interest
Feb 4, 2013
From: JEZEWSKI, CHRISTOPHER J.; CLARKE, JAMES S.; INDUKURI, TEJASWI K.; GSTREIN, FLORIAN
To: INTEL CORPORATION
Reel/Frame 029750/0777 →
Assignment of Assignor's Interest
Jul 16, 2013
From: BRAIN, RUTH A.; FISCHER, KEVIN J.; CHILDS, MICHAEL A.
To: INTEL CORPORATION
Reel/Frame 030811/0085 →
Assignment of Assignor's Interest
Aug 5, 2013
From: GLASS, GLENN A.; MURTHY, ANAND S.
To: INTEL CORPORATION
Reel/Frame 030942/0949 →
Assignment of Assignor's Interest
Aug 5, 2013
From: GLASS, GLENN A.; MURTHY, ANAND S.; GHANI, TAHIR
To: INTEL CORPORATION
Reel/Frame 030942/0800 →
Assignment of Assignor's Interest
Aug 5, 2013
From: GLASS, GLENN A.; MURTHY, ANAND S.; GHANI, TAHIR
To: INTEL CORPORATION
Reel/Frame 030942/0859 →
Assignment of Assignor's Interest
Aug 15, 2013
From: BOYANOV, BOYAN; SINGH, KANWAL JIT
To: INTEL CORPORATION
Reel/Frame 031022/0160 →
Assignment of Assignor's Interest
Sep 3, 2015
From: RADOSAVLJEVIC, MARKO; PILLARISETTY, RAVI; DEWEY, GILBERT; MUKHERJEE, NILOY
To: INTEL CORPORATION
Reel/Frame 036491/0579 →
Assignment of Assignor's Interest
Jun 6, 2022
From: INTEL CORPORATION
To: DAEDALUS PRIME LLC
Reel/Frame 060392/0603 →
Assignment of Assignor's Interest
Jun 6, 2022
From: INTEL CORPORATION
To: DAEDALUS PRIME LLC
Reel/Frame 060392/0594 →
Assignment of Assignor's Interest
Feb 13, 2023
From: INTEL CORPORATION
To: DAEDALUS PRIME LLC
Reel/Frame 062746/0654 →
Corrective Assignment to Correct the Us Patent 10,592,626 Should Have Been Identified as 10,593,626. Previously Recorded on Reel 060392 Frame 0603. Assignor(S) Hereby Confirms the Assignment.
May 18, 2023
From: INTEL CORPORATION
To: DAEDALUS PRIME LLC
Reel/Frame 063695/0134 →