Self-aligned gate edge and local interconnect
Self-aligned gate edge and local interconnect structures and methods of fabricating self-aligned gate edge and local interconnect structures are described. In an example, a semiconductor structure includes a semiconductor fin disposed above a substrate and having a length in a first direction. A gate structure is disposed over the semiconductor fin, the gate structure having a first end opposite a second end in a second direction, orthogonal to the first direction. A pair of gate edge isolation structures is centered with the semiconductor fin. A first of the pair of gate edge isolation structures is disposed directly adjacent to the first end of the gate structure, and a second of the pair of gate edge isolation structures is disposed directly adjacent to the second end of the gate structure.
1 . An integrated circuit structure, comprising:
a first semiconductor fin disposed above a substrate, the first semiconductor fin having a length in a first direction;
a first gate structure disposed over the first semiconductor fin, the first gate structure having a first end opposite a second end in a second direction, orthogonal to the first direction;
a second semiconductor fin disposed above the substrate, the second semiconductor fin having a length in the first direction;
a second gate structure disposed over the second semiconductor fin, the second gate structure having a first end opposite a second end in the second direction, and the second gate structure aligned with the first gate structure along the second direction;
a gate edge isolation structure between the first and second semiconductor fins, wherein the gate edge isolation structure is spaced equally from the first semiconductor fin as from the second semiconductor fin; and
a gate local interconnect disposed above and electrically coupling the first and second gate structures, thereby spanning the gate edge isolation structure between the first and second semiconductor fins,
wherein the gate edge isolation structure has a top surface above a top surface of the first and second gate structures.
2 . The integrated circuit structure of claim 1 , wherein the gate edge isolation structures is disposed directly adjacent to the second end of the first gate structure and to the first end of the second gate structure.
3 . The integrated circuit structure of claim 1 , wherein the first and second gate structures comprise a high-k gate dielectric layer and a metal gate electrode.
4 . The integrated circuit structure of claim 1 , further comprising:
source or drain regions disposed in the first and second semiconductor fins.
5 . The integrated circuit structure of claim 1 , wherein the first gate structure is an N-type gate structure, and the second gate structure is a P-type gate structure.
6 . The integrated circuit structure of claim 1 , wherein the first gate structure is an N-type gate structure, and the second gate structure is an N-type gate structure.
7 . The integrated circuit structure of claim 1 , wherein the first gate structure is a P-type gate structure, and the second gate structure is a P-type gate structure.
8 . The integrated circuit structure of claim 1 , wherein the gate edge isolation structure comprises a material selected from the group consisting of silicon oxide, silicon nitride, silicon carbide, and a combination thereof.
9 . The integrated circuit structure of claim 1 , wherein the gate edge isolation structure has a top surface above a top surface of the first and second semiconductor fins.
10 . The integrated circuit structure of claim 1 , wherein the first gate structure is a P-type gate structure, and the second gate structure is an N-type gate structure.
11 . A computing device, comprising:
a board; and
a component coupled to the board, the component including an integrated circuit structure, comprising:
a first semiconductor fin disposed above a substrate, the first semiconductor fin having a length in a first direction;
a first gate structure disposed over the first semiconductor fin, the first gate structure having a first end opposite a second end in a second direction, orthogonal to the first direction;
a second semiconductor fin disposed above the substrate, the second semiconductor fin having a length in the first direction;
a second gate structure disposed over the second semiconductor fin, the second gate structure having a first end opposite a second end in the second direction, and the second gate structure aligned with the first gate structure along the second direction;
a gate edge isolation structure between the first and second semiconductor fins, wherein the gate edge isolation structure is spaced equally from the first semiconductor fin as from the second semiconductor fin; and
a gate local interconnect disposed above and electrically coupling the first and second gate structures, thereby spanning the gate edge isolation structure between the first and second semiconductor fins,
wherein the gate edge isolation structure has a top surface above a top surface of the first and second gate structures.
12 . The computing device of claim 11 , further comprising: a memory coupled to the board.
13 . The computing device of claim 11 , further comprising: a communication chip coupled to the board.
14 . The computing device of claim 11 , further comprising: a camera coupled to the board.
15 . The computing device of claim 11 , further comprising: a battery coupled to the board.
16 . The computing device of claim 11 , further comprising: an antenna coupled to the board.
17 . The computing device of claim 11 , wherein the component is a packaged integrated circuit die.
18 . The computing device of claim 11 , wherein the computing device is selected from the group consisting of a mobile phone, a laptop, a desk top computer, a server, and a set-top box.