Column IV transistors for PMOS integration
Techniques are disclosed for forming column IV transistor devices having source/drain regions with high concentrations of germanium, and exhibiting reduced parasitic resistance relative to conventional devices. In some example embodiments, the source/drain regions each includes a thin p-type silicon or germanium or SiGe deposition with the remainder of the source/drain material deposition being p-type germanium or a germanium alloy (e.g., germanium:tin or other suitable strain inducer, and having a germanium content of at least 80 atomic % and 20 atomic % or less other components). In some cases, evidence of strain relaxation may be observed in the germanium rich cap layer, including misfit dislocations and/or threading dislocations and/or twins. Numerous transistor configurations can be used, including both planar and non-planar transistor structures (e.g., FinFETs and nanowire transistors), as well as strained and unstrained channel structures.
1. An integrated circuit device, comprising:
a semiconductor nanowire comprising at least one of silicon and germanium;
a gate structure around the semiconductor nanowire, the gate structure including a gate electrode and a gate dielectric between the semiconductor nanowire and the gate electrode;
a source structure or drain structure adjacent the semiconductor nanowire, the source structure or drain structure including a first portion and a second portion, the first portion comprising at least one of silicon and germanium, and the second portion comprising a p-type dopant and germanium, the second portion having a germanium concentration in excess of 80 atomic %, wherein the first portion is thinner than the second portion, and wherein the first portion is between the second portion and the semiconductor nanowire; and
a contact structure on the second portion of the source structure or drain structure.
2. The device of claim 1 , wherein the semiconductor nanowire consists essentially of silicon, and the first portion of the source structure or drain structure consists essentially of silicon or silicon and germanium.
3. The device of claim 1 , wherein the semiconductor nanowire consists essentially of germanium, and the first portion of the source structure or drain structure consists essentially of silicon or silicon and germanium.
4. The device of claim 1 , wherein the semiconductor nanowire consists essentially of silicon and germanium, and the first portion of the source structure or drain structure consists essentially of silicon or silicon and germanium.
5. The device of claim 1 , wherein gate structure wraps around the semiconductor nanowire.
6. The device of claim 1 , wherein the second portion further comprises tin, the tin concentration being in the range of 3 atomic % to 8 atomic %.
7. An integrated circuit device, comprising:
a semiconductor fin comprising at least one of silicon and germanium;
a gate structure around the semiconductor fin, the gate structure including a gate electrode and a gate dielectric between the semiconductor fin and the gate electrode;
a source structure or drain structure adjacent the semiconductor fin, the source structure or drain structure including a first portion and a second portion, the first portion comprising at least one of silicon and germanium, and the second portion comprising a p-type dopant and germanium, the second portion having a germanium concentration in excess of 80 atomic %, wherein the first portion is thinner than the second portion, and wherein the first portion is between the second portion and the semiconductor fin; and
a contact structure on the second portion of the source structure or drain structure.
8. The device of claim 7 , wherein the semiconductor fin consists essentially of silicon, and the first portion of the source structure or drain structure consists essentially of silicon or silicon and germanium.
9. The device of claim 7 , wherein the semiconductor fin consists essentially of germanium, and the first portion of the source structure or drain structure consists essentially of silicon or silicon and germanium.
10. The device of claim 7 , wherein the semiconductor fin consists essentially of silicon and germanium, and the first portion of the source structure or drain structure consists essentially of silicon or silicon and germanium.
11. The device of claim 7 , wherein gate structure is on three sides of the semiconductor fin.
12. The device of claim 7 , wherein the second portion further comprises tin, the tin concentration being in the range of 3 atomic % to 8 atomic %.
13. A computing device, comprising:
a board; and
a component coupled to the board, the component including an integrated circuit structure, comprising:
a semiconductor nanowire comprising at least one of silicon and germanium;
a gate structure around the semiconductor nanowire, the gate structure including a gate electrode and a gate dielectric between the semiconductor nanowire and the gate electrode;
a source structure or drain structure adjacent the semiconductor nanowire, the source structure or drain structure including a first portion and a second portion, the first portion comprising at least one of silicon and germanium, and the second portion comprising a p-type dopant and germanium, the second portion having a germanium concentration in excess of 80 atomic %, wherein the first portion is thinner than the second portion, and wherein the first portion is between the second portion and the semiconductor nanowire; and
a contact structure on the second portion of the source structure or drain structure.
14. The computing device of claim 13 , further comprising:
a memory coupled to the board.
15. The computing device of claim 13 , further comprising:
a communication chip coupled to the board.
16. The computing device of claim 13 , wherein the component is a packaged integrated circuit die.
17. A computing device, comprising:
a board; and
a component coupled to the board, the component including an integrated circuit structure, comprising:
a semiconductor fin comprising at least one of silicon and germanium;
a gate structure around the semiconductor fin, the gate structure including a gate electrode and a gate dielectric between the semiconductor fin and the gate electrode;
a source structure or drain structure adjacent the semiconductor fin, the source structure or drain structure including a first portion and a second portion, the first portion comprising at least one of silicon and germanium, and the second portion comprising a p-type dopant and germanium, the second portion having a germanium concentration in excess of 80 atomic %, wherein the first portion is thinner than the second portion, and wherein the first portion is between the second portion and the semiconductor fin; and
a contact structure on the second portion of the source structure or drain structure.
18. The computing device of claim 17 , further comprising:
a memory coupled to the board.
19. The computing device of claim 17 , further comprising:
a communication chip coupled to the board.
20. The computing device of claim 17 , wherein the component is a packaged integrated circuit die.