High speed low temperature method for manufacturing and repairing semiconductor processing equipment and equipment produced using same
A method for the joining of ceramic pieces into an assembly adapted to be used in semiconductor processing. The joined pieces are adapted to withstand the environments within a process chamber during substrate processing, chamber cleaning processes, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck. The ceramic pieces may be aluminum nitride and the pieces may be brazed with aluminum. The joint material is adapted to withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck. The joint is adapted to provide a hermetic seal across the joint. The joined pieces are adapted to be separated at a later time should rework or replacement of one of the pieces be desired.
1. A plate and shaft device used in semiconductor processing, said plate and shaft device comprising:
a plate, said plate comprising a first ceramic, said plate comprising a joining interface surface of said first ceramic;
a shaft, said shaft comprising a second ceramic, said shaft comprising an interior space and an exterior, said shaft comprising a joining interface surface of said second ceramic, said shaft coupled to a bottom surface of said plate;
a first metal joining layer directly disposed between said joining interface surface of said plate and said joining interface surface of said shaft, wherein said first metal joining layer hermetically seals said interior space of said shaft from said exterior of said shaft through said first metal joining layer, said first metal joining layer comprising aluminum,
wherein the conductive heat coefficient of said first ceramic is higher than the conductive heat coefficient of said second ceramic.
2. The plate and shaft device of claim 1 wherein said first ceramic comprises aluminum nitride and said second ceramic comprises zirconia.
3. The plate and shaft device of claim 1 wherein said first metal joining layer comprises greater than 89% by weight aluminum.
4. The plate and shaft device of claim 1 wherein said first metal joining layer comprises greater than 89% by weight aluminum.
5. The plate and shaft device of claim 2 wherein said first metal joining layer comprises greater than 99% by weight aluminum.
6. The plate and shaft device of claim 2 wherein said first metal joining layer comprises greater than 99% by weight aluminum.
7. A plate and shaft device used in semiconductor processing, said plate and shaft device comprising:
a plate, said plate comprising aluminum nitride, said plate comprising a joining interface surface of aluminum nitride;
a shaft, said shaft comprising aluminum nitride, said shaft comprising an interior space and an exterior, said shaft comprising a joining interface surface of aluminum nitride, said shaft coupled to a bottom surface of said plate;
a first metal joining layer directly disposed between said joining interface surface of said plate and said joining interface surface of said shaft, wherein said first metal joining layer hermetically seals said interior space of said shaft from said exterior of said shaft through said first metal joining layer, said first metal joining layer comprising aluminum, wherein said first metal joining layer comprises greater than 99% by weight aluminum.