Integrated circuits and methods for forming integrated circuits
An example relates to an integrated circuit including a semiconductor substrate, and a wiring layer stack located on the semiconductor substrate. The integrated circuit further includes a transistor embedded in the wiring layer stack. The transistor includes an embedded layer. The embedded layer has a thickness of less than 10 nm. The embedded layer includes at least one two-dimensional crystalline layer including more than 10% metal atoms. Further examples relate to methods for forming integrated circuits.
1. An integrated circuit comprising:
a semiconductor substrate,
a wiring layer stack located on the semiconductor substrate, and
a transistor embedded in the wiring layer stack,
wherein the transistor comprises an embedded layer,
wherein the embedded layer has a thickness of less than 10 nm,
wherein the embedded layer comprises at least one two-dimensional crystalline layer comprising more than 10% metal atoms.
2. The integrated circuit according to claim 1 ,
wherein the embedded layer is a thin film crystal layer.
3. The integrated circuit according to claim 2 ,
wherein the thin film crystal layer comprises less than 20 two-dimensional crystalline monolayers.
4. The integrated circuit according to claim 2 ,
wherein a first portion of the thin film crystal layer is a channel region of the transistor and a second portion of the thin film crystal layer is a source region of the transistor.
5. The integrated circuit according to claim 4 ,
wherein at least the first portion of the thin film crystal layer has a first crystal phase, and
wherein the second portion of the thin film crystal layer has a second crystal phase differing from the first crystal phase.
6. The integrated circuit according to claim 5 ,
wherein the first crystal phase is an H-phase and the second crystal phase is a T-phase.
7. The integrated circuit according to claim 5 ,
wherein at least 70% of the material of the second portion has a T-phase crystal structure.
8. The integrated circuit according to claim 2 ,
wherein the thin film crystal layer comprises at least 10% of metal atoms, wherein the metal atoms are Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Rf, Db, Sg, Bh, Hs, Mt, Ds, or Rg.
9. The integrated circuit according to claim 2 ,
wherein the thin film crystal layer comprises at least 10% of secondary atoms,
wherein the secondary atoms are S, Cl, H, O, Se, or Te.
10. The integrated circuit according to claim 2 ,
wherein the thin film crystal layer comprises at least 10% of tertiary atoms, wherein the tertiary atoms are S, Cl, H, O, Se, or Te.
11. The integrated circuit according to claim 2 ,
wherein the thin film crystal layer comprises one of MoS 2 , MoTe 2 , or Ti 2 SC, Ti 2 CdC, Hf 2 InC, Hf 2 SSc, or Ti 3 SiC 2 .
12. The integrated circuit according to claim 2 ,
wherein the thin film crystal layer is a transition metal dichalcogenide layer.
13. The integrated circuit according to claim 4 ,
wherein the transistor comprises a gate dielectric layer and a gate electrode, wherein the gate dielectric layer is located between the first portion of the thin film crystal layer and the gate electrode.
14. The integrated circuit according to claim 6 ,
wherein the transistor comprises a source metal contact structure electrically connected to the second portion of the thin film crystal layer.