Photoresist topcoat compositions and methods of processing photoresist compositions
Photoresist topcoat compositions, comprising: a first polymer that is aqueous base soluble and is present in an amount of from 70 to 99 wt % based on total solids of the composition; a second polymer comprising a repeat unit of general formula (IV) and a repeat unit of general formula (V): wherein: R 5 independently represents H, halogen atom, C1-C3 alkyl, or C1-C3 haloalkyl; R 6 represents linear, branched or cyclic C1 to C20 fluoroalkyl; R 7 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L 3 represents a multivalent linking group; and m is an integer of from 1 to 5; wherein the second polymer is free of non-fluorinated side chains; and wherein the second polymer is present in an amount of from 1 to 30 wt % based on total solids of the composition and a solvent. The invention finds particular applicability in the manufacture of semiconductor devices.
1. A photoresist topcoat composition, comprising:
a first polymer that is aqueous base soluble and is present in an amount of from 70 to 99 wt % based on total solids of the composition;
a second polymer comprising a repeat unit of general formula (IV) and a repeat unit of general formula (V):
wherein: R 5 independently represents H, halogen atom, C1-C3 alkyl, or C1-C3 haloalkyl; R 6 represents linear, branched or cyclic C1 to C20 fluoroalkyl; R 7 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L 3 represents a multivalent linking group; and m is an integer of from 1 to 5; wherein the second polymer is free of non-fluorinated side chains; and wherein the second polymer is present in an amount of from 1 to 30 wt % based on total solids of the composition;
a photoacid generator compound or a thermal acid generator compound; and
a solvent.
2. The photoresist topcoat composition of claim 1 , wherein L 3 represents —C(O)OCH2—.
3. The photoresist topcoat composition of claim 1 , wherein R 6 is branched.
4. The photoresist topcoat composition of claim 1 , wherein R 6 is perfluorinated.
5. The photoresist topcoat composition of claim 1 , wherein the first polymer comprises a repeat unit of general formula (I) and a repeat unit of general formula (II):
wherein: R 1 independently represents H, halogen atom, C1-C3 alkyl, or C1-C3 haloalkyl; R 2 represents optionally substituted linear, branched or cyclic C1-C20 alkyl; L 1 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5.
6. The photoresist topcoat composition of claim 1 , wherein the first polymer comprises a repeat unit of general formula (III):
wherein: R 3 is chosen from H, halogen atom, C1-C3 alkyl, or C1-C3 haloalkyl; R 4 is independently chosen from substituted or unsubstituted C1-C12 alkyl or substituted or unsubstituted C5-C18 aryl; X is a C2-C6 substituted or unsubstituted alkylene group; wherein X can optionally comprise one or more rings and together with R 4 can optionally form a ring; L 2 is a single bond or a linking group; p is an integer of from 1 to 50; and q is an integer of from 1 to 5.
7. The photoresist topcoat composition of claim 1 , wherein the solvent is an organic-based solvent.
8. A coated substrate, comprising:
a photoresist layer on a substrate; and
a topcoat layer formed from a photoresist topcoat composition of claim 1 on the photoresist layer.
9. A method of processing a photoresist composition, comprising:
(a) applying a photoresist composition over a substrate to form a photoresist layer;
(b) applying over the photoresist layer a photoresist topcoat composition of claim 1 to form a topcoat layer;
(c) exposing the topcoat layer and the photoresist layer to activating radiation; and
(d) contacting the exposed topcoat layer and photoresist layer with a developer to form a resist pattern.
10. The method of claim 9 , wherein the topcoat layer is formed by spin-coating, and the second polymer migrates to an upper surface of the topcoat layer during the spin-coating, wherein an upper surface of the topcoat layer consists essentially of the second polymer.
11. The method of claim 9 , wherein L 3 represents —C(O)OCH2—.
12. The method of claim 9 , wherein R 6 is branched.
13. The method of claim 9 , wherein R 6 is perfluorinated.
14. The method of claim 9 , wherein the first polymer comprises a repeat unit of general formula (I) and a repeat unit of general formula (II):
wherein: R 1 independently represents H, halogen atom, C1-C3 alkyl, or C1-C3 haloalkyl; R 2 represents optionally substituted linear, branched or cyclic C1-C20 alkyl; L 1 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5.
15. The method of claim 9 , wherein the first polymer comprises a repeat unit of general formula (III):
wherein: R 3 is chosen from H, halogen atom, C1-C3 alkyl, or C1-C3 haloalkyl; R 4 is independently chosen from substituted or unsubstituted C1-C12 alkyl or substituted or unsubstituted C5-C18 aryl; X is a C2-C6 substituted or unsubstituted alkylene group; wherein X can optionally comprise one or more rings and together with R 4 can optionally form a ring; L 2 is a single bond or a linking group; p is an integer of from 1 to 50; and q is an integer of from 1 to 5.
16. The method of claim 9 , wherein the solvent is an organic-based solvent.
17. The photoresist topcoat composition of claim 1 , wherein the second polymer consists of the repeat unit of general formula (IV) and the repeat unit of general formula (V).