Semiconductor device

1. A semiconductor device comprising:

a controller configured to sequentially generate a plurality of temperature section signals, the plurality of temperature section signals corresponding to a plurality of temperature sections, respectively, each of the plurality of temperature sections corresponding to a divided portion of a temperature measurement range by a specific number, the specific number being a positive integer that is equal to or greater than 2;

a reference voltage generator configured to sequentially generate first reference voltages according to the plurality of temperature section signals;

a temperature voltage generator configured to sequentially generate temperature voltages according to the plurality of temperature section signals and a plurality of second reference voltages; and

a comparator configured to sequentially compare the first reference voltages and the temperature voltages.

2. The semiconductor device of claim 1 , wherein the reference voltage generator comprises:

a voltage divider configured to divide a driving voltage into a plurality of divided voltages; and

a first selector configured to sequentially select one of the plurality of divided voltages as one of the first reference voltages according to the plurality of temperature section signals.

3. The semiconductor device of claim 2 , wherein the reference voltage generator further comprises a second selector configured to sequentially select one of the plurality of divided voltages as one of the second reference voltages according to the plurality of temperature section signals.

4. The semiconductor device of claim 1 further comprising:

a voltage divider configured to divide a driving voltage into a plurality of divided voltages; and

a selector configured to sequentially select one of the plurality of divided voltages as one of the second reference voltages according to the plurality of temperature section signals.

5. The semiconductor device of claim 1 , wherein the temperature voltage generator comprises:

a control voltage generator configured to sequentially generate a plurality of control voltages according to the plurality of temperature section signals; and

a temperature voltage output block configured to sequentially output the plurality of temperature voltages according to the plurality of temperatures section signals and the plurality of control voltages.

6. The semiconductor device of claim 5 , wherein the control voltage generator comprises:

a first resistor block having a first resistance value sequentially controlled by the plurality of temperature section signals; and

a second resistor block having a second resistance value sequentially controlled by the plurality of second reference voltages,

wherein the plurality of control voltages are determined by a ratio between the first resistance value and the second resistance value.

7. The semiconductor device of claim 6 , wherein the temperature voltage output block comprises:

a third resistor block having a third resistance value sequentially controlled by the plurality of temperature section signals; and

a fourth resistor block having a fourth resistance value sequentially controlled by the plurality of control voltages,

wherein the plurality of temperature voltages are determined by a ratio of the third resistance value and the fourth resistance value.

8. The semiconductor device of claim 1 further comprising:

a plurality of latches configured to sequentially receive outputs from the comparator according to the plurality of temperature signals, and to store values corresponding to the outputs; and

a decoder configured to generate a temperature code according to the stored values of the plurality of latches.

9. The semiconductor device of claim 1 , wherein each of the temperature voltages has a value that varies with a temperature in a corresponding one of the plurality of temperature sections.