Reflection type phase shifter with active device tuning
A phase shifter having a four port hybrid coupler is provided. The four port hybrid coupler has first and second input ports and first and second output ports. The four port hybrid coupler is configured to shift the phase of an RF signal as between the first and second input ports. First and second active semiconductor devices are connected to first and second output ports. The first and second active semiconductor devices are configured to change the phase shift of the RF signal as between the first and second input ports based upon a varying voltage.
1. A phase shifter, comprising:
a four port hybrid coupler comprising first and second input ports and first and second output ports, the four port hybrid coupler being configured to shift the phase of an RF signal as between the first and second input ports;
a reference potential terminal;
a second independent voltage terminal;
first and second active semiconductor devices, each of the first and second active semiconductor devices comprising a control terminal and first and second output terminals,
wherein the first and second active semiconductor devices are configured to change the phase shift of the RF signal as between the first and second input ports based upon a varying voltage,
wherein the first output terminals of the first and second active semiconductor devices are respectively electrically coupled to the first and second output ports of the four port hybrid coupler,
wherein the second output terminals of the first and second active semiconductor devices are each electrically connected to the reference potential terminal,
wherein the first output terminals of the first and second active semiconductor devices are each electrically coupled to the second independent voltage terminal, and
wherein the impedance of the first and second active semiconductor devices is independently controllable via an external voltage applied to the second independent voltage terminal.
2. The phase shifter of claim 1 , wherein the first active semiconductor device is configured to present a varying capacitance and resistance to the first output port in response to the varying voltage, and wherein the second active semiconductor device is configured to present a varying capacitance and resistance to the second output port in response to the varying voltage.
3. The phase shifter of claim 1 , wherein the first and second active semiconductor devices are configured to tune the phase shift of the RF signal by at least forty degrees.
4. The phase shifter of claim 3 , wherein the phase shifter has an insertion loss variation less than −0.3 dB across a tuning range and bandwidth of the phase shifter.
5. The phase shifter of claim 1 , wherein the phase shifter is configured to electrically isolate a DC signal applied to the second independent voltage terminal from the four port hybrid coupler and to apply the electrically isolated DC signal to the first output terminals of the first and second active semiconductor devices.
6. The phase shifter of claim 5 , wherein the phase shifter further comprises:
first and second DC blocking capacitors electrically connected between the first output terminals of the first and second active semiconductor devices and the first and second output ports, respectively; and
third and fourth RF chokes electrically connected between the second independent voltage terminal and the first output terminals of the first and second active semiconductor devices.