IP Library Granted Patent US 10,573,779
Granted Patent B2
US 10,573,779 · App. 16/231,914 · Granted Feb 25, 2020

Method for manufacturing light emitting unit

Inventors: Shao-Ying Ting (Tainan, TW); Kuan-Chieh Huang (Tainan, TW); Jing-En Huang (Tainan, TW); Yi-Ru Huang (Tainan, TW); Sie-Jhan Wu (Tainan, TW); Long-Lin Ke (Tainan, TW)
Assignee: Genesis Photonics Inc.
H01L33/0095H01L25/0753H01L33/005H01L33/08H01L33/486H01L33/50H01L33/502H01L33/507H01L33/52H01L33/62H01L33/64H05B33/0803H05B33/0806H05B33/0827H01L27/15H01L2224/04105H01L2224/18H01L2224/19H01L2224/24137H01L2924/0002H01L2933/005H01L2933/0016H01L2933/0041H01L2933/0066
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Quick Facts
Patent No.
US 10,573,779
App. No.
16/231,914
Granted
Feb 25, 2020
Kind
B2
Abstract

A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.

Claims (15)

1. A method for manufacturing light emitting unit, comprising:

providing a substrate;

forming a resin layer over the substrate;

providing a plurality of light emitting chips adhering to the resin layer, each chip having electrodes disposed at a same side thereof, wherein the resin layer at least covers a surface of each chip and exposes the electrodes;

performing a cutting process to form a plurality of light emitting units, each light emitting unit at least comprising a portion of the resin layer and two or more of the light emitting chips, wherein the light emitting units each has a first unit and a second unit emitting light in different colors; and

providing a carrier board having a patterned circuit layer disposed thereon;

coupling the light emitting units to the carrier board, wherein the light emitting chips in the light emitting units electrically connect to the patterned circuit layer via the electrodes.

2. The method for manufacturing the light emitting unit as claimed in claim 1 , wherein the light emitting chips comprises a first chip and a second chip, the first chip and the second chip emit light in different colors.

3. The method for manufacturing the light emitting unit as claimed in claim 1 , wherein the resin layer is doped with a phosphor material comprising a yellow phosphor, a red phosphor, a green phosphor, a blue phosphor, a yttrium aluminium garnet phosphor or combinations thereof.

4. The method for manufacturing the light emitting unit as claimed in claim 1 , wherein the substrate at least comprises a substantially flat top surface.

5. The method for manufacturing the light emitting unit as claimed in claim 1 further comprising:

providing a heat dissipation element disposed on the carrier board.

6. The method for manufacturing the light emitting unit as claimed in claim 1 , wherein a material of the substrate comprises resin, glass, ceramic or sapphire.

7. The method for manufacturing the light emitting unit as claimed in claim 1 , wherein each of the chips further has a light emitting element comprising a first type semiconductor layer, a second type semiconductor layer and a light emitting layer disposed therebetween, wherein the electrodes electrically connect to the first type and the second type semiconductors respectively.

8. The method for manufacturing the light emitting unit as claimed in claim 7 , wherein the light emitting element further comprises a chip substrate and the first type semiconductor layer is disposed between the light emitting layer and the chip substrate.

Assignments (2)
ADDRESS CHANGE REGISTRATION FORM Recorded Dec 15, 2023
From: GENESIS PHOTONICS INC.
To: GENESIS PHOTONICS INC.
Reel/Frame 066044/0133 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 15, 2023
From: GENESIS PHOTONICS INC.
To: NICHIA CORPORATION
Reel/Frame 066044/0807 →
Priority Claims (1)
TW 103124160 A · Jul 14, 2014 · national
Continuity (4)
Continuation 15859714 · Jan 1, 2018
Continuation 14957630 · Dec 3, 2015
Continuation 14474283 · Sep 1, 2014
Related Publication 20190131490A1 · May 2, 2019