Package contact structure, semiconductor package and manufacturing method thereof

1. A package contact structure, comprising:

a conductive contact, comprising a first portion and a second portion disposed on the first portion, wherein materials of the first portion and the second portion are different; and

a dielectric barrier, sleeved on the first portion and extending to cover at least a part of the second portion, wherein a maximum height of the dielectric barrier is less than a maximum height of the conductive contact, and a minimum height of the dielectric barrier is less than a maximum height of the first portion of the conductive contact.

2. The package contact structure of claim 1 , wherein a thickness of the dielectric barrier decreases from the first portion of the conductive contact to the second portion of the conductive contact.

3. The package contact structure of claim 1 , wherein a maximum thickness of the dielectric barrier on the second portion of the conductive contact is less than about 3 μm.

4. The package contact structure of claim 1 , wherein the dielectric barrier has a curvilinear surface surrounding the conductive contact.

5. The package contact structure of claim 1 , wherein

the package contact structure is configured to electrically connect a first package component to a second package component, and

the package contact structure is configured to be covered by an underfill layer disposed between the first package component and the second package component, wherein the dielectric barrier and a part of the second portion unmasked by the dielectric barrier are in contact with the underfill layer.

6. The package contact structure of claim 1 , wherein a surface area of the second portion of the conductive contact covered by the dielectric barrier is at least about 5% of a total surface area of the second portion of the conductive contact.

7. The package contact structure of claim 1 , wherein a boundary of the dielectric barrier on the second portion of the conductive contact ends between an interface between the first portion and the second portion and a plane where a maximum diameter of the second portion is located.

8. A semiconductor package, comprising:

an integrated circuit (IC) component structure;

an insulating encapsulation, laterally encapsulating the IC component structure;

a redistribution structure, disposed on the insulating encapsulation and the IC component structure, and electrically coupled to the IC component structure;

a plurality of conductive contacts, disposed on the redistribution structure opposite to the insulating encapsulation, and electrically connected to the redistribution structure, wherein each of the conductive contacts comprises a first portion connected to the redistribution structure, and a second portion connected to the first portion;

a dielectric barrier, disposed on the redistribution structure, extending between respective ones of the conductive contacts, and being in contact with the conductive contacts to separate the second portions of the conductive contacts from one another, wherein a minimum height of the dielectric barrier is less than a maximum height of the respective first portion;

a package component, disposed on the second portions of the conductive contacts and electrically connected to the conductive contacts; and

an underfill layer, disposed between the redistribution structure and the package component, distributed between the conductive contacts, wherein the underfill layer is separated from the first portions and at least a part of the corresponding second portions through the dielectric barrier.

9. The semiconductor package of claim 8 , wherein the dielectric barrier laterally covers the first portions of the conductive contacts and extends to cover at least a part of each of the second portions of the conductive contacts.

10. The semiconductor package of claim 8 , wherein a viscosity of the underfill layer comprising a plurality of fillers is greater than a viscosity of the dielectric barrier that is free of fillers.

11. The semiconductor package of claim 8 , wherein a thickness of the dielectric barrier between respective ones of the conductive contacts decreases from the first portions of the conductive contacts to the second portions of the conductive contacts.

12. The semiconductor package of claim 11 , wherein a maximum thickness of the dielectric barrier on one of the second portions of the conductive contacts is less than about 3 μm.

13. The semiconductor package of claim 8 , wherein the IC component structure comprises:

a first die and a second die, disposed side by side; and

a third die, disposed on the first and the second die, wherein the first die and the second die are electrically coupled through the third die.

14. A manufacturing method of a semiconductor package, comprising:

forming a redistribution structure on an insulating encapsulation and an integrated circuit (IC) component structure, wherein the insulating encapsulation laterally encapsulates the IC component structure;

forming a plurality of conductive features on the redistribution structure, wherein each of the conductive features comprises a first portion and a second portion, the first portion is in contact with the redistribution structure, and the second portion formed on the first portion comprises a material different from the first portion;

forming a dielectric material on the redistribution structure to cover the first portions of the conductive features and extend to cover at least a part of the second portions of the conductive features, wherein the dielectric material comprises a rough top surface; and

reshaping the conductive features and the dielectric material to respectively form a plurality of conductive contacts and a dielectric barrier so that adjacent ones of the conductive contacts are spaced apart by the dielectric barrier, wherein the rough top surface of the dielectric material is smoothened when reshaping the dielectric material.

15. The manufacturing method according to claim 14 , wherein the dielectric material is dispensed in semi-liquid form on the redistribution structure, and then the dielectric material is cured to form the dielectric barrier.

16. The manufacturing method according to claim 15 , wherein curing the dielectric material comprises:

subjecting the dielectric material to a temperature ranging from about 80° C. to about 150° C.

17. The manufacturing method according to claim 14 , wherein forming the conductive features comprises:

forming a copper-containing material on the redistribution structure to form the first portions of the conductive features; and

forming a solder-containing material on the copper containing material to form the second portions of the conductive features.

18. The manufacturing method according to claim 17 , wherein reshaping the conductive features comprises:

reflowing the second portions of the conductive features such that a top of each of the conductive contacts forms a hemispherical profile.

19. The manufacturing method according to claim 14 , wherein before forming the redistribution structure, the method of laterally covering the IC component structure by the insulating encapsulation comprises:

forming a first encapsulant to encapsulate a first die and a second die, wherein the first die and the second die are disposed side by side;

forming a plurality of conductive connectors on the first die and the second die;

disposing a third die on the first die and the second die in a flip-chip manner, wherein the third die is surrounded by the conductive connectors; and

forming a second encapsulant to encapsulate the third die and the conductive connectors.

20. The manufacturing method according to claim 19 , wherein

before disposing the third die, a redistribution layer is formed on the first die, the second die, and the first encapsulant, and

after disposing the third die, the third die and the conductive connectors are electrically coupled to the first die and the second die through the redistribution layer.