IP Library Granted Patent US 10,777,479
Granted Patent B2
US 10,777,479 · App. 16/236,824 · Granted Sep 15, 2020

Semiconductor memory device

Inventor: Yoshiaki Goto (Nishikasugai-gun, JP)
Assignee: Toshiba Memory Corporation
H01L23/3142H01L23/4951H01L23/4952H01L23/49513H01L23/49524H01L23/49541H01L23/49575H01L24/32H01L24/49H01L23/49544H01L23/49555H01L23/49861H01L24/45H01L24/48H01L24/73H01L2224/32057H01L2224/32145H01L2224/32245H01L2224/45144H01L2224/45147H01L2224/48091H01L2224/48145H01L2224/48147H01L2224/48247H01L2224/49H01L2224/73265H01L2224/83385H01L2224/97H01L2225/06562H01L2924/01004H01L2924/01005H01L2924/01006H01L2924/01029H01L2924/01033H01L2924/01057H01L2924/01079H01L2924/01082H01L2924/07802H01L2924/181
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Quick Facts
Patent No.
US 10,777,479
App. No.
16/236,824
Granted
Sep 15, 2020
Kind
B2
Abstract

A lead frame includes a first outer lead portion and a second outer lead portion which is arranged to oppose to the first outer lead portion with an element-mounting region between them. An inner lead portion has first inner leads connected to the first outer leads and second inner leads connected to the second outer leads. At least either the first or second inner leads are routed in the element-mounting region. An insulation resin is filled in the gaps between the inner leads located on the element-mounting region. A semiconductor device is configured with semiconductor elements mounted on both the top and bottom surfaces of the lead frame.

Claims (15)

1. A semiconductor memory device, comprising:

an element-mounting region;

a semiconductor memory element mounted on the element-mounting region via an adhesive layer, the semiconductor memory element including an element surface and a pad on the element surface;

a metal wire;

a sealing region sealing the semiconductor memory element, the adhesive layer, and the metal wire with resin, the sealing region including first and second long edge sides and first and second short edge sides when the semiconductor memory element is projected from the element-mounting region;

an element-supporting portion supporting the semiconductor memory element;

at least two hanging elements provided at the first long edge side of the sealing region, one end of the hanging elements being connected to the element-supporting portion, and a second end of the hanging elements being exposed to a first lateral face of the resin containing the first long edge sides of the sealing region;

an outer lead portion including first outer leads arranged at the first short edge side of the sealing region and second outer leads arranged at the second short edge side of the sealing region; and

an inner lead portion including a plurality of inner leads, at least a part of the inner leads being routed in the element-mounting region, and one end of at least one of the inner leads being arranged at the second long edge side of the sealing region,

wherein the pad and the one end of at least one of the inner leads are connected through the metal wire,

wherein at least a part of the element-supporting portion is in the element-mounting region,

wherein the inner leads include first inner leads and second inner leads,

wherein each of the first inner leads includes at least a first portion, a second portion, and a third portion, the first portion extending to the one end of at least one of the inner leads, the second portion extending to the first outer leads, and the third portion routing in the element-mounting region to extend in a direction which intersects the first and second portions,

wherein each of the second inner leads includes at least a fourth portion, a fifth portion, and a sixth portion, the fourth portion extending to the one end of at least one of the inner leads, the fifth portion extending to the second outer leads, and the sixth portion routing in the element-mounting region to extend in a direction which intersects the fourth and fifth portions, and

wherein at least a part of the element-supporting portion is provided in a region between the third portion and the sixth portion.

Assignments (3)
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
Priority Claims (1)
JP 2007-268775 · Oct 16, 2007 · national
Continuity (6)
Continuation 15428801 · Feb 9, 2017
Continuation 14875287 · Oct 5, 2015
Continuation 14086253 · Nov 21, 2013
Continuation 13177257 · Jul 6, 2011
Continuation 12252584 · Oct 16, 2008
Related Publication 20190139849A1 · May 9, 2019