Monomers, polymers and lithographic compositions comprising same

1. A method for providing a photoresist relief image comprising:

a) applying a coating layer of a photoresist composition on a substrate; and

b) exposing the photoresist composition layer to activating radiation and developing the exposed photoresist composition layer,

wherein: the photoresist composition comprises:

i) one or more polymers that comprise repeating units formed by the polymerization of a tellurium-containing monomer: wherein the tellurium containing monomer

repeating units formed by the polymerization of a tellurium-containing monomer: wherein the tellurium containing monomer comprises a tellurophene heterocycle and one or more ethylenically polymerizable groups, or

the tellurium-containing monomer is of Formula (IIIC); and

ii) one or more acid generator compounds

wherein,

R is hydrogen or an optionally substituted C 1-16 alkyl;

S is a chemical bond or a chain having from 1 to 20 carbon and oxygen atoms that are optionally substituted;

each R 1 is the same or different non-hydrogen substituent;

R 2 is a non-hydrogen substituent; and

n is an integer of 0 to 4,

wherein the tellurium-containing monomer of Formula (IIIC) further comprises one or more acid-cleavable groups.

2. The method of claim 1 , wherein the tellurium-containing monomer comprises one or more optionally substituted acrylate moiety, optionally substituted acrylamide moiety, optionally substituted vinyl ether moiety or a cyclic olefin moiety.

3. The method of claim 1 , wherein the tellurium-containing monomer comprises one more optionally substituted methacrylate, fluoromethacrylate, cyanoacrylate, methylacrylamide, vinyl ether, norbornyl acrylate moiety, optionally substituted acrylamide moiety, optionally substituted lactone, optionally substituted vinyl ether moiety or a cyclic olefin moiety.

4. The method of claim 1 wherein the tellurium-containing monomer comprises one or more alkyl, fluoroalkyl, carbocyclic aryl, heteroaryl, sulfonic ester or sulfonamide.

5. The method of claim 1 , wherein the tellurium-containing monomer is selected from:

6. The method of claim 1 , wherein the tellurium-containing monomer is selected from the group consisting of:

7. A method for providing a photoresist relief image, comprising:

a) applying a layer of an underlayer coating composition on a substrate;

b) applying a layer of a photoresist composition above the underlayer coating composition layer, wherein the underlayer coating composition and the photoresist composition are different; and

c) exposing the photoresist composition layer to activating radiation and developing the exposed photoresist composition layer,

wherein the underlayer coating composition comprises: one or more polymers that comprise repeating units formed by the polymerization of a tellurium-containing monomer: wherein the tellurium containing monomer

repeating units formed by the polymerization of a tellurium-containing monomer: wherein the tellurium containing monomer comprises a tellurophene heterocycle and one or more ethylenically polymerizable groups, or

the tellurium-containing monomer is of Formula (IIIC);

wherein,

R is hydrogen or an optionally substituted C 1-16 alkyl;

S is a chemical bond or a chain having from 1 to 20 carbon and oxygen atoms that are optionally substituted;

each R 1 is the same or different non-hydrogen substituent;

R 2 is a non-hydrogen substituent; and

n is an integer of 0 to 4.

8. The method of claim 7 , wherein the tellurium-containing monomer further comprises one or more acid-cleavable groups, polar groups and/or base reactive groups.

9. The method of claim 7 , wherein tellurium-containing monomer comprises one or more optionally substituted acrylate moiety, optionally substituted acrylamide moiety, optionally substituted vinyl ether moiety or a cyclic olefin moiety.

10. The method of claim 7 , wherein the tellurium-containing monomer comprises one more optionally substituted methacrylate, fluoromethacrylate, cyanoacrylate, methylacrylamide, vinyl ether, norbornyl acrylate moiety, optionally substituted acrylamide moiety, optionally substituted lactone, optionally substituted vinyl ether moiety or a cyclic olefin moiety.

11. The method of claim 7 wherein the tellurium-containing monomer comprises one or more of alkyl, fluoroalkyl, carbocyclic aryl, heteroaryl, sulfonic ester or sulfonamide.

12. The method of claim 7 wherein the tellurium monomer is selected from among:

13. The method of claim 7 , wherein the monomer is selected from the group consisting of:

14. A photoresist composition, comprising:

one or more polymers comprising repeating units formed by the polymerization of a tellurium-containing monomer: wherein the tellurium containing monomer

repeating units formed by the polymerization of a tellurium-containing monomer: wherein the tellurium containing monomer that comprises a tellurophene heterocycle and one or more ethylenically polymerizable groups, or

the tellurium-containing monomer is of Formula (IIIC); and

one or more acid generator compounds,

wherein,

R is hydrogen or an optionally substituted C 1-16 alkyl;

S is a linker;

each R 1 is the same or different non-hydrogen substituent;

R 2 is a non-hydrogen substituent; and

n is an integer of 0 to 4;

wherein the tellurium-containing monomer represented by the formula (IIIC) comprises one or more acid-cleavable groups.

15. The photoresist of claim 14 , wherein the tellurium-containing monomer further comprises one or more polar groups, base reactive groups, or a combination thereof.

16. A method for providing a photoresist relief image, the method comprising:

applying a coating layer of a photoresist composition of claim 14 on a substrate; and

exposing the coating layer to activating radiation and developing the exposed coating layer.

17. The photoresist composition of claim 14 , wherein the tellurium-containing monomer is selected from the group consisting of: