Semiconductor package with in-package compartmental shielding and fabrication method thereof
A semiconductor package includes a substrate. At least a high-frequency chip and a circuit component susceptible to high-frequency interference are disposed on a top surface of the substrate. A first ground ring is disposed on the substrate surrounding the high-frequency chip. A first metal-post reinforced glue wall is disposed on the first ground ring surrounding the high-frequency chip. A second ground ring is disposed on the top of the substrate surrounding the circuit component. A second metal-post reinforced glue wall is disposed on the second ground ring surrounding the circuit component. A molding compound covers at least the high-frequency chip and the circuit component. A conductive layer is disposed on the molding compound and is coupled to the first metal-post reinforced glue wall and/or the second metal-post reinforced glue wall.
1. A semiconductor package with an in-package compartmental shielding, comprising:
a substrate having at least one high-frequency chip and a circuit component susceptible to high-frequency signal interference on a top surface of the substrate;
a first ground ring, on the top surface of the substrate, surrounding the high-frequency chip;
a first metal-post reinforced glue wall disposed on the first ground ring, surrounding the high-frequency chip, wherein the first metal-post reinforced glue wall comprises a plurality of first metal posts, wherein one end of each of the plurality of first metal posts is fixed on the first ground ring, and the other end is suspended, and the plurality of first metal posts surrounds the high-frequency chip;
a second ground ring surrounding the circuit component on the top surface of the substrate;
a second metal-post reinforced glue wall disposed on the second ground ring surrounding the circuit component, wherein the second metal-post reinforced glue wall comprises a plurality of second metal posts, wherein one end of each of the plurality of second metal posts is fixed on the second ground ring, and the other end is suspended, and the plurality of second metal posts surrounds the circuit component;
a molding compound disposed only inside the first metal-post reinforced glue wall and the second metal-post reinforced glue wall and covering at least the high-frequency chip and the circuit component, respectively; and
a conductive layer disposed on the molding compound and in contact with the first metal-post reinforced glue wall and/or the second metal-post reinforced glue wall.
2. The semiconductor package with an in-package compartmental shielding according to claim 1 , wherein the first metal-post reinforced glue wall or the second metal-post reinforced glue wall further comprises a glue attached to a surface of each of the plurality of the first or second metal posts.
3. The semiconductor package with an in-package compartmental shielding according to claim 2 , wherein the glue comprises a thermosetting resin, a thermoplastic resin or an ultraviolet (UV) curing resin.
4. The semiconductor package with an in-package compartmental shielding according to claim 2 , wherein the glue comprises a conductive paste.
5. The semiconductor package with an in-package compartmental shielding according to claim 2 , wherein the glue comprises conductive particles.
6. The semiconductor package with an in-package compartmental shielding according to claim 5 , wherein the conductive particles comprise copper, silver, gold, aluminum, nickel, palladium, any combination or alloy thereof, or graphene.
7. The semiconductor package with an in-package compartmental shielding according to claim 5 , wherein a composition of the molding compound is different from a composition of the glue.
8. The semiconductor package with an in-package compartmental shielding according to claim 1 , wherein a top surface of the molding compound is flush with a top surface of the first metal-post reinforced glue wall and a top surface of the second metal-post reinforced glue wall.
9. A semiconductor package, comprising:
a substrate having at least one semiconductor chip disposed directly on a top surface of the substrate;
a ground ring surrounding the semiconductor chip on the top surface of the substrate;
a metal-post reinforced glue wall disposed on the ground ring to surround the semiconductor chip; and
a molding compound disposed only inside the metal-post reinforced glue wall and covering the semiconductor chip.
10. The semiconductor package according to claim 9 , wherein the metal-post reinforced glue wall comprises a plurality of metal posts, wherein one end of each of the plurality of metal posts is fixed on the ground ring, and the other end is suspended, and the plurality of metal posts surrounds the semiconductor chip.
11. The semiconductor package according to claim 10 , wherein the metal-post reinforced glue wall further comprises a glue attached to a surface of each of the plurality of the metal posts.
12. The semiconductor package according to claim 11 , wherein the glue comprises a thermosetting resin, a thermoplastic resin or an ultraviolet (UV) curing resin.
13. The semiconductor package according to claim 11 , wherein the glue comprises a conductive paste.
14. The semiconductor package according to claim 13 , wherein the glue comprises conductive particles.
15. The semiconductor package according to claim 14 , wherein the conductive particles comprise copper, silver, gold, aluminum, nickel, palladium, any combination or alloy thereof, or graphene.
16. The semiconductor package according to claim 11 , wherein a composition of the molding compound is different from a composition of the glue.
17. The semiconductor package according to claim 9 , wherein a top surface of the molding compound is flush with a top surface of the metal-post reinforced glue wall.