IP Library Granted Patent US 10,522,457
Granted Patent B2
US 10,522,457 · App. 16/238,786 · Granted Dec 31, 2019

Microelectronic components with features wrapping around protrusions of conductive vias protruding from through-holes passing through substrates

Inventors: Cyprian Emeka Uzoh (San Jose, CA); Charles G. Woychik (San Jose, CA); Arkalgud R. Sitaram (Cupertino, CA); Hong Shen (Palo Alto, CA); Zhuowen Sun (Campbell, CA); Liang Wang (Milpitas, CA); Guilian Gao (San Jose, CA)
Assignee: Invensas Corporation
H01L23/5223H01L21/76802H01L21/76877H01L21/823431H01L21/823475H01L23/5226H01L28/60H01L2924/0002
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,522,457
App. No.
16/238,786
Granted
Dec 31, 2019
Kind
B2
Abstract

In a microelectronic component having conductive vias ( 114 ) passing through a substrate ( 104 ) and protruding above the substrate, one or more conductive features ( 120 E.A, 120 E.B, or both) are provided above the substrate that wrap around the conductive vias' protrusions ( 114 ′) to form capacitors, electromagnetic shields, and possibly other elements. Other features and embodiments are also provided.

Claims (43)

1. A microelectronic component comprising:

a substrate comprising one or more first through-holes;

one or more conductive vias, each conductive via comprising a portion inside a corresponding first through-hole, and comprising a conductive protrusion protruding from the corresponding first through-hole for attachment to circuitry outside the microelectronic component;

for each conductive protrusion:

a first dielectric region wrapping around the conductive protrusion and covering the corresponding first through-hole adjacent to the conductive protrusion; and

a first conductive sleeve region wrapping around the conductive protrusion, the first conductive sleeve region being separated from the corresponding first through-hole and the conductive protrusion by the corresponding first dielectric region;

wherein the microelectronic component is configured to operate with the first conductive sleeve region receiving a voltage to act as an electromagnetic shield for the conductive protrusion.

2. The microelectronic component of claim 1 wherein the voltage is a constant voltage.

3. The microelectronic component of claim 1 further comprising said circuitry which is outside the microelectronic component and which has one or more contact pads attached to the one or more conductive protrusions.

4. The microelectronic component of claim 1 further comprising, for each conductive protrusion:

a second conductive sleeve region wrapping around the conductive protrusion, the second conductive sleeve region being separated from the corresponding first through-hole and the conductive protrusion by the corresponding first dielectric region; and

a second dielectric region wrapping around the second conductive sleeve region and separating the second dielectric region from the corresponding first dielectric region.

5. A microelectronic component comprising:

a substrate comprising one or more first through-holes;

one or more conductive vias, each conductive via comprising a portion inside a corresponding first through-hole, and comprising a conductive protrusion protruding from the corresponding first through-hole for attachment to circuitry outside the microelectronic component;

for each conductive protrusion, a first dielectric region wrapping around the conductive protrusion and covering the corresponding first through-hole adjacent to the conductive protrusion; and

a conductive layer comprising, for each conductive protrusion, a first conductive sleeve region wrapping around the conductive protrusion, the first conductive sleeve region being separated from the corresponding first through-hole and the conductive protrusion by the corresponding first dielectric region;

wherein the conductive layer covers one side surface of the substrate except for an area surrounded by any first conductive sleeve region;

wherein the microelectronic component is configured to operate with the conductive layer receiving a voltage to act as an electromagnetic shield for the substrate.

6. The microelectronic component of claim 5 wherein each first conductive sleeve region is a protrusion of the conductive layer.

7. The microelectronic component of claim 5 wherein each said protrusion of the conductive layer is on a side opposite from the substrate.

8. The microelectronic component of claim 5 further comprising said circuitry which is outside the microelectronic component and which has one or more contact pads attached to the one or more conductive protrusions.

9. The microelectronic component of claim 8 wherein each said conductive protrusion is on a first side of the substrate, and the substrate comprises a second side opposite to the first side;

wherein the microelectronic component further comprises one or more integrated circuits attached to the second side of the substrate.

10. The microelectronic component of claim 9 wherein the conductive layer is configured to operate with the conductive layer electromagnetically shielding said circuitry from the one or more integrated circuits attached to the second side of the substrate.

11. A microelectronic component comprising:

a substrate comprising one or more first through-holes;

one or more conductive vias, each conductive via comprising a portion inside a corresponding first through-hole, and comprising a conductive protrusion protruding from the corresponding first through-hole for attachment to circuitry outside the microelectronic component;

for each conductive protrusion:

a first dielectric region wrapping around the conductive protrusion and covering the corresponding first through-hole adjacent to the conductive protrusion; and

a first conductive sleeve region wrapping around the conductive protrusion, the first conductive sleeve region being separated from the corresponding first through-hole and the conductive protrusion by the corresponding first dielectric region;

wherein the microelectronic component is configured to operate with the first conductive sleeve region receiving a constant voltage.

12. The microelectronic component of claim 11 further comprising a conductive layer comprising each first conductive sleeve region; and

wherein the conductive layer covers one side surface of the substrate except for an area surrounded by any first conductive sleeve region.

13. The microelectronic component of claim 12 further comprising said circuitry which is outside the microelectronic component and which has one or more contact pads attached to the one or more conductive protrusions.

14. The microelectronic component of claim 13 further comprising one or more integrated circuits attached to a second side of the substrate opposite the said one side surface of the substrate.

15. The microelectronic component of claim 12 wherein each first conductive sleeve region is a protrusion of the conductive layer.

16. The microelectronic component of claim 15 wherein each said protrusion of the conductive layer is on a side opposite from the substrate.

17. The microelectronic component of claim 11 further comprising a conductive layer comprising each first conductive sleeve region;

wherein the one or more conductive protrusions are a plurality of the conductive protrusions; and

the conductive layer covers one side surface of the substrate between the first conductive sleeve regions.

18. The microelectronic component of claim 17 further comprising said circuitry which is outside the microelectronic component and which has one or more contact pads attached to the one or more conductive protrusions.

19. The microelectronic component of claim 18 further comprising one or more integrated circuits attached to a second side of the substrate opposite the said one side surface of the substrate.

Assignments (4)
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS CORPORATION
To: INVENSAS LLC
Reel/Frame 073508/0668 →
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS LLC
To: ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
Reel/Frame 073508/0751 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 3, 2019
From: UZOH, CYPRIAN EMEKA; WOYCHIK, CHARLES G.; SITARAM, ARKALGUD R.; SHEN, HONG; SUN, ZHUOWEN; WANG, LIANG; GAO, GUILIAN
To: INVENSAS CORPORATION
Reel/Frame 047895/0494 →
Continuity (5)
Continuation 15952935 · Apr 13, 2018
Continuation 15619160 · Jun 9, 2017
Continuation 15200554 · Jul 1, 2016
Continuation 14633746 · Feb 27, 2015
Related Publication 20190157199A1 · May 23, 2019