Metal contamination reduction in substrate processing systems with transformer coupled plasma
A substrate processing system includes a processing chamber including a substrate support to support a substrate. A coil includes at least one terminal. An RF source configured to supply RF power to the coil. A dielectric window is arranged on one surface of the processing chamber adjacent to the coil. A contamination reducer includes a first plate that is arranged between the at least one terminal of the coil and the dielectric window.
1. A substrate processing system, comprising:
a processing chamber including a substrate support to support a substrate;
an inner coil including a first conductor including first terminals and a second conductor including second terminals;
an outer coil including a third conductor including third terminals and a fourth conductor including fourth terminals;
an RF source configured to supply RF power to the inner and outer coils;
a dielectric window arranged on one surface of the processing chamber adjacent to the inner and outer coils; and
a contamination reducer including:
a first plate arranged between (a) the dielectric window and (b) a first one of the third terminals of the third conductor and a first one of the fourth terminals of the fourth conductor;
a second plate arranged between (a) the dielectric window and (b) the first terminals of the first conductor;
a third plate arranged between (a) the dielectric window and (b) the second terminals of the second conductor; and
a fourth plate arranged between (a) the dielectric window and (b) a second one of the third terminals of the third conductor and a second one of the fourth terminals of the fourth conductor.
2. The substrate processing system of claim 1 , further comprising a gas delivery system configured to supply gas mixtures to the processing chamber.
3. The substrate processing system of claim 2 , further comprising a gas injector configured to deliver the gas mixtures to the processing chamber, wherein the gas injector is arranged in a center portion of the dielectric window.
4. The substrate processing system of claim 1 , wherein the first plate, the second plate, the third plate and the fourth plate have a shape selected from a group consisting of rectangular, polygonal, circular and elliptical.
5. The substrate processing system of claim 1 , wherein the first plate is made of a material selected from a group consisting of copper and aluminum.
6. The substrate processing system of claim 1 , wherein the first plate is made of silver-plated copper.
7. The substrate processing system of claim 1 , wherein the inner coil and the outer coil are arranged in a range from 0.1″ to 1.0″ from the dielectric window.
8. The substrate processing system of claim 1 , wherein the inner coil and the outer coil are arranged in a range from 0.1″ to 0.5″ from the dielectric window.
9. The substrate processing system of claim 1 , wherein the inner coil and the outer coil are arranged at the same height above the dielectric window.
10. The substrate processing system of claim 1 , wherein the inner coil and the outer coil are arranged at different heights above the dielectric window.
11. The substrate processing system of claim 1 , wherein a thickness of the first plate is greater than or equal to 0.5 mm and less than or equal to 2 mm.
12. The substrate processing system of claim 1 , wherein:
the dielectric window includes a coating material on a plasma-facing surface thereof, and
the contamination reducer reduces contamination of the substrate by species of the coating material.
13. The substrate processing system of claim 12 , wherein the coating material includes metal species and wherein the contamination reducer reduces metal contamination of the substrate.
14. The substrate processing system of claim 1 , wherein the inner and outer coils are boated along a first plane that is parallel to a second plane of an upper surface of the dielectric window.