Field effect transistor devices having gate contacts formed in active region overlapping source/drain contacts

1. A method for fabricating a semiconductor device, comprising:

forming a field effect transistor (FET) device on a semiconductor substrate, the FET device comprising a source/drain layer, and a gate structure comprising a gate electrode layer, a gate capping layer, and a gate sidewall spacer;

forming a first interlevel dielectric (ILD) layer which encapsulates the FET device;

forming a gate contact opening in the first ILD layer and the gate capping layer to expose a portion of the gate electrode layer of the gate structure, wherein a portion of the gate contact opening has width that is greater than a width of the gate structure;

forming an insulating spacer on vertical sidewalls of the gate contact opening in the first ILD layer;

forming a vertical gate contact in the gate contact opening in contact with the exposed portion of the gate electrode layer of the gate structure of the FET device;

forming a source/drain contact opening in the first ILD layer down to the source/drain layer of the FET device, wherein the source/drain contact opening exposes a portion of the insulating spacer formed on the vertical sidewalls of the gate contact opening; and

forming a vertical source/drain contact in the source/drain contact opening in contact with the source/drain layer, wherein the exposed portion of the insulating spacer serves to electrically insulate the vertical gate contact from the vertical source/drain contact.

2. The method of claim 1 , further comprising:

forming a gate contact capping layer on an upper surface of the vertical gate contact prior to forming the vertical source/drain contact; and

forming a source/drain contact capping layer on an upper surface of the vertical source/drain contact;

wherein the source/drain contact capping layer is formed of an insulating material that has etch selectivity with respect to insulating materials that form the insulating spacer and the gate contact capping layer.

3. The method of claim 2 , wherein the gate contact capping layer is formed of silicon nitride (SiN) and wherein the source/drain contact capping layer is formed of silicon oxycarbide (SiCO).

4. The method of claim 2 , wherein forming the source/drain contact capping layer on the upper surface of the vertical source/drain contact comprises:

recessing a portion of the upper surface of the vertical source/drain contact;

depositing a conformal layer of insulating material to cover the recessed portion of the upper surface of the vertical source/drain contact; and

performing a planarization process to remove an overburden portion of the conformal layer of insulating material and form the source/drain contact capping layer;

wherein the planarization process results in upper surfaces of the source/drain contact capping layer and gate contact capping layer being coplanar.

5. The method of claim 2 , further comprising:

forming a second ILD layer which comprises a gate via contact opening that exposes a portion of the gate contact capping layer, and a portion of the source/drain contact capping layer formed on the vertical source/drain contact;

etching the exposed portion of the gate contact capping layer selective to the exposed portion of the source/drain contact capping layer to expose a portion of the vertical gate contact; and

forming a gate via contact in the gate via contact opening of the second ILD layer in contact with the exposed portion of the vertical gate contact and the exposed portion of the source/drain contact capping layer;

wherein a portion of the gate via contact overlaps a portion of the vertical source/drain contact; and

wherein the source/drain contact capping layer electrically insulates the overlapping portions of the gate via contact and the vertical source/drain contact.

6. The method of claim 1 , wherein the vertical source/drain contact and the vertical gate contact are formed of tungsten.

7. The method of claim 1 , wherein forming the insulating spacer on the vertical sidewalls of the gate contact opening in the first ILD layer comprises:

depositing a conformal layer of insulating material; and

anisotropically etching the conformal layer of insulating material.

8. The method of claim 1 , wherein the insulating spacer on the vertical sidewalls of the gate contact opening in the first ILD layer comprises silicon boron carbon nitride (SiBCN).

9. The method of claim 1 , wherein the gate contact opening is formed of a width which extends past the gate sidewall spacer of the gate structure.

10. The method of claim 1 , wherein the FET device comprises a FinFET device.

11. A semiconductor device, comprising:

a field effect transistor (FET) device disposed on a semiconductor substrate, wherein the FET device comprises a source/drain layer, and a gate structure comprising a gate electrode layer, a gate capping layer, and a gate sidewall spacer;

a vertical source/drain contact disposed in contact with the source/drain layer of the FET device;

a source/drain contact capping layer disposed on an upper surface of the vertical source/drain contact;

a vertical gate contact disposed in contact with a portion of the gate electrode layer of the gate structure of the FET device, which is exposed through an etched opening in the gate capping layer;

an insulating spacer disposed between overlapping sidewalls of the vertical gate contact and the vertical source/drain contact to thereby electrically insulate the vertical gate contact from the vertical source/drain contact;

a gate contact capping layer disposed on an upper surface of the vertical gate contact; and

a gate via contact disposed in contact with a portion of the vertical gate contact that is exposed through an etched opening in the gate contact capping layer, wherein a portion of the gate via contact overlaps a portion of the vertical source/drain contact;

wherein the source/drain contact capping layer electrically insulates the overlapping portions of the gate via contact and the vertical source/drain contact.

12. The semiconductor device of claim 11 , wherein the gate contact capping layer and the source/drain contact capping layer are formed of insulating materials that have etch selectivity with respect to each other.

13. The semiconductor device of claim 12 , wherein the gate contact capping layer is formed of silicon nitride (SiN) and wherein the source/drain contact capping layer is formed of silicon oxycarbide (SiCO).

14. The semiconductor device of claim 11 , wherein an upper surface of the source/drain contact capping layer is coplanar with an upper surface of the gate contact capping layer.

15. The semiconductor device of claim 11 , further comprising a source/drain via contact disposed in contact with a portion of the vertical source/drain contact that is exposed through an etched opening in the source/drain contact capping layer.

16. The semiconductor device of claim 11 , wherein the insulating spacer comprises silicon boron carbon nitride (SiBCN).

17. The semiconductor device of claim 11 , wherein the vertical source/drain contact and the vertical gate contact are formed of tungsten.

18. The semiconductor device of claim 11 , wherein the FET device comprises a FinFET device.

19. The semiconductor device of claim 11 , wherein the source/drain contact capping layer is formed of silicon oxycarbide (SiCO).

20. The semiconductor device of claim 11 , wherein the gate contact capping layer is formed of a material that has etch selectivity with respect to materials that form the source/drain contact capping layer and the insulating spacer.