Cleaning method and apparatus

1. A method, comprising:

transferring a wafer to a position over a wafer chuck;

lifting a lifting pin through the wafer chuck to a first position to receive the wafer;

introducing a gas to a region between the wafer and the wafer chuck through a plurality of first openings on a sidewall of the lifting pin; and

after introducing the gas to the region between the wafer and the wafer chuck, lowering the lifting pin from the first position to a second position lower than the first position such that the wafer reaches the wafer chuck.

2. The method of claim 1 , wherein introducing the gas is performed prior to lowering the lifting pin.

3. The method of claim 1 , further comprising:

holding the wafer on the lifting pin through a second opening on a top surface of the lifting pin using a vacuum suction force.

4. The method of claim 3 , wherein introducing the gas is performed after holding the wafer.

5. The method of claim 1 , wherein introducing the gas comprises supplying the gas into a first gas passage inside the lifting pin, wherein the first gas passage is gaseously communicated with the first openings on the sidewall of the lifting pin.

6. The method of claim 1 , further comprising:

performing a lithography process to the wafer after introducing the gas.

7. The method of claim 1 , further comprising:

performing a thermal process to the wafer after introducing the gas.

8. The method of claim 1 , wherein introducing the gas is performed until the wafer reaches the wafer chuck.

9. The method of claim 1 , wherein transferring the wafer comprises gripping the wafer using a gripper, and the method further comprises:

stopping gripping the wafer; and

moving the gripper away from the wafer chuck prior to performing introducing the gas.

10. A method, comprising:

transferring a wafer from a load port to a position above a lifting pin, wherein the lifting pin extends through a wafer chuck;

holding the wafer using a negative pressure source in gaseous communication with a first gas passage of the lifting pin;

blowing the wafer and the wafer chuck using a positive pressure source in gaseous communication with a second gas passage of the lifting pin;

lowering the lifting pin such that the wafer is in contact with the wafer chuck; and

evacuating a gas from the wafer chuck to hold the wafer after the wafer is in contact with the wafer chuck.

11. The method of claim 10 , wherein blowing the wafer and the wafer chuck comprises:

ejecting a gas through a plurality of openings on an outer tube wall of the lifting pin, wherein the openings are in gaseous communication with the second gas passage.

12. The method of claim 10 , wherein blowing the wafer and the wafer chuck is performed after holding the wafer.

13. The method of claim 10 , wherein lowering the lifting pin is performed after blowing the wafer and the wafer chuck.

14. The method of claim 10 , further comprising:

continuing blowing the wafer and the wafer chuck until the wafer is in contact with the wafer chuck.

15. The method of claim 10 , further comprising:

halting blowing the wafer and the wafer chuck; and

after halting blowing the wafer and the wafer chuck, performing a lithography process to the wafer.

16. The method of claim 10 , further comprising:

halting blowing the wafer and the wafer chuck; and

after halting blowing the wafer and the wafer chuck, performing a thermal process to the wafer.

17. The method of claim 10 , wherein transferring the wafer is performed using a gripper, and the method further comprises:

moving the gripper away from the wafer prior to blowing the wafer and the wafer chuck.

18. An apparatus, comprising:

a chuck having a hole;

a lifting pin penetrating through the hole of the chuck, wherein the lifting pin comprises an inner gas passage and an outer gas passage concentrically arranged in the lifting pin, and wherein the lifting pin comprises a first opening on a top surface of the lifting pin and at least one second opening on a sidewall of the lifting pin, the first opening in gaseous communication with the inner gas passage, and the at least one second opening in gaseous communication with the outer gas passage;

a vacuum source in gaseous communication with the inner gas passage in the lifting pin; and

a gas source in gaseous communication with the outer gas passage in the lifting pin.

19. The apparatus of claim 18 , wherein the inner gas passage is gaseously isolated from the outer gas passage.

20. The apparatus of claim 18 , wherein the at least one second opening is circumferentially arranged on the sidewall of the lifting pin.