Vapor deposition of molybdenum using a bis(alkyl-arene) molybdenum precursor
Described are vapor deposition methods for depositing molybdenum materials onto a substrate by the use of bis(alkyl-arene) molybdenum, also referred to herein as (alkyl-arene) 2 Mo, for example bis(ethyl-benzene) molybdenum ((EtBz) 2 Mo), as a precursor for such deposition, as well as structures that contain the deposited material.
1. A method of forming a molybdenum-containing material on a substrate, the method comprising contacting the substrate with bis(alkyl-arene) molybdenum vapor under chemical vapor deposition conditions to deposit a molybdenum carbide seed layer having a thickness in a range of from 6 to 100 angstroms on the substrate followed by depositing a layer of metallic molybdenum onto the molybdenum carbide seed layer wherein the molybdenum carbide seed layer comprises Mo 2 C or MoC and where the molybdenum carbide seed layer consists essentially of molybdenum carbide.
2. The method of claim 1 wherein the bis(alkyl-arene) molybdenum is bis(ethyl-benzene) molybdenum ((EtBz) 2 Mo).
3. The method of claim 1 , wherein the molybdenum carbide seed layer comprises carbon and molybdenum in an atomic ratio of from 1:99 to 60:40 (carbon:molybdenum).
4. The method of claim 1 comprising depositing the molybdenum carbide seed layer onto the substrate by chemical vapor deposition at a substrate temperature that is not greater than 300 degrees Celsius.
5. The method of claim 1 comprising depositing the molybdenum carbide seed layer onto the substrate in a deposition chamber having an internal pressure between 10 and 50 Torr.
6. The method of claim 1 , wherein the molybdenum carbide seed layer comprises carbon and molybdenum in an atomic ratio of from 4:96 to 40:60 (carbon:molybdenum).
7. The method of claim 1 , wherein the molybdenum carbide seed layer is deposited onto a surface of the substrate that includes titanium nitride.
8. The method of claim 1 , wherein the molybdenum carbide seed layer is deposited onto a three-dimensional surface of the substrate.
9. The method of claim 8 , wherein the three-dimensional surface is a feature of a 3D NAND device comprising vertical walls separated by wells, the walls including horizontally-extending ribs and pockets, and the method comprises depositing the layer of metallic molybdenum over surfaces of ribs and pockets.
10. The method of claim 8 , wherein the three-dimensional surface includes an opening having an aspect ratio of depth to lateral dimension that is in a range of from 2:1 to 200:1.
11. The method of claim 1 , wherein the metallic molybdenum is derived from molybdenum halide precursor or molybdenum oxyhalide precursor.
12. The method of claim 1 , wherein the metallic molybdenum is derived from precursor selected from molybdenum pentachloride (MoCl 5 ), molybdenum oxytetrachloride (MoOCl 4 ), and molybdenum hexafluoride (MoF 6 ).
13. The method of claim 1 comprising depositing the metallic molybdenum onto the substrate by chemical vapor deposition at a substrate temperature that is below 500 degrees Celsius.
14. The method of claim 1 , wherein the metallic molybdenum has a thickness of at least 50 angstroms.
15. A method of forming a molybdenum-containing material on a substrate, the method comprising:
contacting the substrate with bis(alkyl-arene) molybdenum vapor under chemical vapor deposition conditions to deposit a molybdenum carbide seed layer having a thickness in a range of from 6 to 100 angstroms on the substrate, wherein the molybdenum carbide seed layer consists essentially of molybdenum carbide; and
depositing a layer of metallic molybdenum onto the molybdenum carbide seed layer.
16. The method of claim 15 , wherein the deposition of the metallic molybdenum onto the molybdenum carbide seed layer occurs at less than 500 degrees Celsius.
17. The method of claim 15 , wherein the molybdenum carbide seed layer is deposited on a titanium nitride substrate.