Semiconductor and ferromagnetic insulator heterostructure
A first aspect provides a topological quantum computing device comprising a network of semiconductor-superconductor nanowires, each nanowire comprising a length of semiconductor formed over a substrate and a coating of superconductor formed over at least part of the semiconductor; wherein at least some of the nanowires further comprise a coating of ferromagnetic insulator disposed over at least part of the semiconductor. A second aspect provides a method of fabricating a quantum or spintronic device comprising a heterostructure of semiconductor and ferromagnetic insulator, by: forming a portion of the semiconductor over a substrate in a first vacuum chamber, and growing a coating of the ferromagnetic insulator on the semiconductor by epitaxy in a second vacuum chamber connected to the first vacuum chamber by a vacuum tunnel, wherein the semiconductor comprises InAs and the ferromagnetic insulator comprises EuS.
1. A topological quantum computing device comprising:
a network of semiconductor-superconductor nanowires, each nanowire comprising a length of semiconductor formed over a substrate and a coating of superconductor formed over and physically contacting at least part of the semiconductor,
wherein at least some of said nanowires further comprise a coating of ferromagnetic insulator disposed over at least part of the semiconductor.
2. The topological quantum computing device of claim 1 , wherein at least some of the ferromagnetic insulator is formed on at least part of the semiconductor.
3. The topological quantum computing device of claim 2 , wherein the semiconductor comprises InAs and the ferromagnetic insulator comprises EuS.
4. The topological quantum computing device of claim 3 , wherein at least some of the coating of ferromagnetic insulator is disposed between the semiconductor and the superconductor, with at least some of the superconductor being formed on at least part of the ferromagnetic insulator; and wherein the superconductor comprises Al.
5. The topological quantum computing device of claim 1 , wherein at least some of the coating of ferromagnetic insulator is disposed between the semiconductor and the superconductor, with at least some of the superconductor being formed on at least part of the ferromagnetic insulator.
6. The topological quantum computing device of claim 5 , wherein the ferromagnetic insulator comprises EuS and the superconductor comprises Al.
7. The topological quantum computing device of claim 1 , wherein the semiconductor comprises InAs, GaSb or InSb or a combination thereof.
8. The topological quantum computing device of claim 1 , wherein the ferromagnetic insulator comprises EuS, EuO, Y3Fe5O12, Bi3Fe5O12, YFeO3, Fe2O3, Fe3O4, GdN, Sr2CrReO6, CrBr3, CrI3, YTiO3 or a diluted magnetic semiconductor, or a combination thereof.
9. The topological quantum computing device of claim 1 , wherein the superconductor comprises Al.