IP Library › Granted Patent US 12,480,046
Granted Patent B2
US 12,480,046 · App. 17/756,813 · Granted Nov 25, 2025

Method of selectively etching a metal component

Inventors: Shivendra Upadhyay (Copenhagen, DK); Saulius Vaitiekenas (Copenhagen, DK); Charles Masamed Marcus (Copenhagen, DK)
Assignee: Microsoft Technology Licensing, LLC
C09K13/00H01L21/0272H01L21/32134H01L21/32139
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Quick Facts
Patent No.
US 12,480,046
App. No.
17/756,813
Granted
Nov 25, 2025
Kind
B2
Abstract

A method of selectively etching a metal component of a workpiece further comprising a ferromagnetic insulator component. The method comprises contacting the metal component with an etchant solution. The etchant solution comprises a basic etchant and a solvent. The method is useful in the context of the fabrication of semiconductor-superconductor-ferromagnetic insulator hybrid devices, for example. The etchant solution may not attack the ferromagnetic insulator component. Also provided is a composition for etching a metal, and a kit comprising the composition and a composition for depositing a styrene-acrylate co-polymer on a surface.

Claims (25)

1 . A method of selectively etching a metal component of a workpiece comprising a ferromagnetic insulator component situated on a semiconductor component, the metal component having a least a first portion situated on the semiconductor component, the method comprising:

forming a layer of resist over the metal component and the ferromagnetic insulator component;

developing the layer of resist to form a mask which exposes at least a portion of the metal component and an edge portion of the ferromagnetic insulator component;

contacting the exposed portion of the metal component and the edge portion of the ferromagnetic insulator component with an etchant solution, wherein the etchant solution comprises a basic etchant and a solvent, thereby removing the exposed portion of the metal component while preserving the edge portion of the ferromagnetic insulator component.

2 . The method according to claim 1 , wherein the ferromagnetic insulator component comprises a material selected from europium sulfide and europium oxide.

3 . The method according to claim 1 , wherein the basic etchant is a compound of Formula 1:

wherein R1 to R4 are each independently selected C1 to C6 alkyl groups.

4 . The method according to claim 3 , wherein the basic etchant is tetramethyl ammonium hydroxide.

5 . The method according to claim 1 , wherein the solvent comprises a mixture of water and a C1 to C5 alkanol.

6 . The method according to claim 5 , wherein the C1 to C5 alkanol is propan-2-ol.

7 . The method according to claim 5 , wherein the water is present in an amount in a range 3% to 10% by weight based on a total weight of the solvent.

8 . The method according to claim 1 , wherein the basic etchant is present in the etchant solution at a concentration in a range 5 to 20 mM.

9 . The method according to claim 1 , wherein the metal component comprises a metal selected from aluminium, gallium, and indium.

10 . The method according to claim 9 , wherein the metal is aluminium.

11 . The method according to claim 1 , wherein the workpiece further comprises a protective layer arranged on the ferromagnetic insulator component.

12 . The method according to claim 11 , wherein the protective layer comprises aluminium oxide.

13 . The method according to claim 1 , wherein the workpiece further comprises a semiconductor component; and

wherein the semiconductor component comprises a material of a formula InAs x Sb 1-x , wherein x is in a range 0 to 1.

14 . The method according to claim 13 , wherein the semiconductor component comprises indium arsenide.

15 . The method according to claim 1 , further comprising, before the contacting:

forming a layer of resist over the metal component and the ferromagnetic insulator component;

selectively exposing a portion of the layer of resist; and

developing the layer of resist to form a mask which exposes a portion of the metal component.

16 . The method according to claim 15 , wherein the layer of resist comprises a methylmethacrylate-methacrylic acid copolymer.

17 . The method according to claim 15 , wherein the layer of resist comprises a poly(alpha-methylstyrene-co-methyl chloroacrylate).

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 17, 2023
From: UPADHYAY, SHIVENDRA; VAITIEKENAS, SAULIUS; MARCUS, CHARLES MASAMED
To: MICROSOFT TECHNOLOGY LICENSING, LLC
Reel/Frame 062736/0420 →
Continuity (1)
Related Publication 20230008150A1 · Jan 12, 2023
References Cited (115)
US 4904980A · Przybysz · 1990 [cited by applicant]
US 5084437A · Talvacchio · 1992 [cited by applicant]
US 5696392A · Char · 1997 [cited by applicant]
US 10224475B2 · Cybart · 2019 [cited by applicant]
US 10665701B2 · Freedman et al. · 2020 [cited by applicant]
US 10692010B2 · Freedman et al. · 2020 [cited by applicant]
US 10879464B2 · Krogstrup Jeppesen et al. · 2020 [cited by applicant]
US 11024792B2 · Ramakers et al. · 2021 [cited by applicant]
US 11088312B2 · Schueffelgen · 2021 [cited by applicant]
US 11380836B2 · Holmes et al. · 2022 [cited by applicant]
US 11678590B2 · Schueffelgen · 2023 [cited by applicant]
US 12171147B2 · Gardner · 2024 [cited by applicant]
US 12275921B2 · Takahashi · 2025 [cited by examiner]
US 20030027724A1 · Rose · 2003 [cited by applicant]
US 20030194867A1 · Kudelka · 2003 [cited by examiner]
US 20060012000A1 · Estes · 2006 [cited by examiner]
US 20070059645A1 · Tang · 2007 [cited by examiner]
US 20130037895A1 · Lee et al. · 2013 [cited by applicant]
US 20180248103A1 · Ivry · 2018 [cited by applicant]
US 20200227636A1 · Krogstrup et al. · 2020 [cited by applicant]
US 20210126180A1 · Winkler et al. · 2021 [cited by applicant]
US 20210126181A1 · Winkler et al. · 2021 [cited by applicant]
US 20210175408A1 · Gardner et al. · 2021 [cited by applicant]
US 20210324271A1 · Eto · 2021 [cited by examiner]
US 20220149262A1 · Gardner et al. · 2022 [cited by applicant]
US 20220282156A1 · Narita · 2022 [cited by examiner]
US 20230012371A1 · Krogstrup Jeppesen et al. · 2023 [cited by applicant]
AU 2015282876A1 · 2017 [cited by applicant]
CA 2064362A1 · 1992 [cited by applicant]
CN 1252398A · 2004 [cited by applicant]
CN 101971273A · 2011 [cited by applicant]
CN 106575667A · 2017 [cited by applicant]
CN 106663691A · 2017 [cited by applicant]
CN 108364951A · 2018 [cited by applicant]
CN 109314174A · 2019 [cited by applicant]
CN 109804477A · 2019 [cited by applicant]
EP 0968979A1 · 2000 [cited by applicant]
EP 3351658A1 · 2018 [cited by applicant]
JP S6224677A · 1987 [cited by applicant]
JP 2002094370A · 2002 [cited by applicant]
JP 2009048778A · 2009 [cited by applicant]
JP 2010232562A · 2010 [cited by applicant]
JP 2019532506A · 2019 [cited by applicant]
KR 20120050235A · 2012 [cited by applicant]
KR 101535386B1 · 2015 [cited by applicant]
KR 20190033634A · 2019 [cited by applicant]
KR 20190040061A · 2019 [cited by applicant]
WO 2015017659A1 · 2015 [cited by applicant]
WO 2017217960A1 · 2017 [cited by applicant]
WO 2018052424A1 · 2018 [cited by applicant]
WO 2018171823A1 · 2018 [cited by applicant]
WO 2019099171A3 · 2019 [cited by applicant]
WO WO2019151141A1 · 2019 [cited by examiner]
WO 2021093977A1 · 2021 [cited by applicant]
Dow, Microposit™ MF™—321 Developer (Year: 2008). [cited by examiner]
“AR-P 6200 (CSAR 62)”, Retrieved from: http://web.archive.org/web/20190807053946/https://www.allresist.com/csar-62-ar-p-6200/, Aug. 7, 2019, 1 Page. [cited by applicant]
Stanescu, et al., “Majorana Fermions in Semiconductor Nanowires”, In Journal of Physical Review B, vol. 84, Issue 14, Oct. 28, 2011, 29 Pages. [cited by applicant]
“Nano™ MC PMMA and Copolymer”, Retrieved from: https://kayakuam.com/wp-content/uploads/2019/09/PMMA_Data_Sheet.pdf, Sep. 2019, 8 Pages. [cited by applicant]
Alicea, Jason, “Majorana Fermions in a Tunable Semiconductor Device”, In the Repository of arXiv:0912.2115v1, Dec. 10, 2009, 10 Pages. [cited by applicant]
Shabani, et al., “Two-dimensional Epitaxial Superconductor-Semiconductor Heterostructures: A Platform for Topological Superconducting Networks”, In Journal of Physical Review B, vol. 93, Issue 15, Apr. 1, 2016, 6 Pages. [cited by applicant]
Sau, et al., “Generic New Platform for Topological Quantum Computation Using Semiconductor Heterostructures”, In Journal of Physical Review Letters, vol. 104, Issue 4, Jan. 27, 2010, 4 Pages. [cited by applicant]
Tinkham, Michael, “Introduction to Superconductivity”, In Publication McGraw Hill, Inc., 1996, 472 Pages. [cited by applicant]
Winkler, et al., “Unified Numerical Approach to Topological Semiconductor-Superconductor Heterostructures”, In Journal of Physical Review B, vol. 99, Issue 24, Jun. 13, 2019, 14 Pages. [cited by applicant]
Court, et al., “Energy gap measurement of nanostructured thin aluminium films for use in single Cooper-pair devices”, In Journal of Superconductor Science and Technology, vol. 21, No. 1, Nov. 27, 2007, 9 Pages. [cited by applicant]
Vaitiekėnas, et al., “Selective-Area-Grown Semiconductor-Superconductor Hybrids: A Basis for Topological Networks”, In Journal of Physical Review Letters, vol. 121, Issue 14, Oct. 3, 2018, 5 Pages. [cited by applicant]
Chang, et al., “Hard Gap in Epitaxial Semiconductor-Superconductor Nanowires”, In Journal of Nature Nanotechnology vol. 10, Issue 3, Mar. 2015, pp. 232-236. [cited by applicant]
Cherkez, et al., “Proximity Effect between Two Superconductors Spatially Resolved by Scanning Tunneling Spectroscopy”, In Journal of Physical Review X, vol. 4, No. 1, Mar. 11, 2014, 13 Pages. [cited by applicant]
Drachmann, et al., “High-critical-field superconducting heterostructures using anodic oxidation”, In Proceedings of the APS March Meeting, Mar. 4, 2019, 01 Page. [cited by applicant]
Drachmann, “Proximity Effect Transfer from NbTi into a Semiconductor Heterostructure via Epitaxial Aluminum”, In Journal of Nano Letters, vol. 17, Issue 2, Jan. 10, 2017, 8 Pages. [cited by applicant]
Evertsson, et al., “The thickness of native oxides on aluminum alloys and single crystals”, In Journal of Applied Surface Science, Sep. 15, 2015, pp. 826-832. [cited by applicant]
Housecroft, et al., “Chapter 15: The group 15 elements”, In Book of Inorganic Chemistry, Pearson Inc, 2008, pp. 433-489. [cited by applicant]
Kittel, Charles, “Introduction to Solid State Physics”, In Publication of John Wiley & Sons, 2005, 700 Pages. [cited by applicant]
Naergaard, et al., “Quantized Conductance Doubling and Hard Gap in a Two-Dimensional Semiconductor-Superconductor Heterostructure”, In Journal of Nature communications, vol. 7, Issue 1, Sep. 29, 2016, 6 Pages. [cited by applicant]
Krizek, et al., “Field effect enhancement in buffered quantum nanowire networks”, In Journal of Physical Review Materials, vol. 2, Issue 9, Sep. 7, 2018, 08 Pages. [cited by applicant]
Wolf, et al., “Fabrication and magnetic characterization of nanometer-size ellipses of the ferromagnetic insulator EuS”, In Journal of Magnetism and Magnetic Materials, vol. 368, May 9, 2014, pp. 49-53. [cited by applicant]
Krogstrup, et al., “Epitaxy of Semiconductor-Superconductor Nanowires”, In Journal of Nature Materials, vol. 14, Issue 4, Apr. 2015, pp. 400-406. [cited by applicant]
Liu, et al., “Semiconductor—Ferromagnetic Insulator—Superconductor Nanowires: Stray Field and Exchange Field”, In Repository of arXiv:1910.03364v1, Oct. 8, 2019, 29 Pages. [cited by applicant]
Ocola, et al., “Development Characteristics of Polymethyl Methacrylate in Alcohol/Water Mixtures: A Lithography and Raman Spectroscopy Study”, In Journal of Nanotechnology, vol. 27, Issue 3, Dec. 9, 2015, 13 Pages. [cited by applicant]
Oreg, et al., “Helical Liquids and Majorana Bound States in Quantum Wires”, In Journal of Physical Review Letter, vol. 105, Issue 17, Oct. 20, 2010, 4 Pages. [cited by applicant]
Pauka, et al., “Repairing the Surface of InAs-based Topological Heterostructures”, In Repository of arXiv:1908.08689v1, Aug. 23, 2019, 7 Pages. [cited by applicant]
“International Search Report and Written Opinion Issued in PCT Application No. PCT/EP2019/083906”, Mailed Date: Jul. 22, 2020, 14 Pages. [cited by applicant]
“International Search Report and Written Opinion Issued in PCT Application No. PCT/US20/063459”, Mailed Date: Mar. 12, 2021, 11 Pages. [cited by applicant]
“International Search Report and Written Opinion Issued in PCT Application No. PCT/EP19/083904”, Mailed Date: Oct. 7, 2020, 12 Pages. [cited by applicant]
Linder, et al., “Majorana Fermions Manifested as Interface-States in Semiconductor Hybrid Structures”, In the Repository of arXiv:1004.3786v1, Apr. 21, 2010, 4 Pages. [cited by applicant]
Wu, et al., “Chiral Majorana Fermion Edge States in a Heterostructure of Superconductor and Semiconductor With Spin-Orbit Coupling”, In The Journal of Physics: Conference Series, vol. 393, Jul. 9, 2012, 6 pages. [cited by applicant]
Grosfeld, et al., “Observing Majorana Bound States of Josephson Vortices in Topological Superconductors”, In the Repository of arXiv:1012.2492v2, Aug. 18, 2011, 10 Pages. [cited by applicant]
Notice of Allowance mailed on Feb. 27, 2024, in U.S. Appl. No. 17/561,330, 9 pages. [cited by applicant]
Communication under Rule 71(3) EPC Received for European Application No. 20830437.8, mailed on Apr. 17, 2024, 7 pages. [cited by applicant]
Notice of Allowance Received for Korea Application No. 10-2022-7017934, mailed on Apr. 25, 2024, 8 pages (English Translation Provided). [cited by applicant]
“Non Final Office Action Issued in U.S. Appl. No. 17/561,330”, Mailed Date: Oct. 6, 2023, 19 Pages. [cited by applicant]
“Notice of Allowance Issued in European Patent Application No. 19817246.2”, Mailed Date: Aug. 10, 2023, 7 Pages. [cited by applicant]
He, et al., “Chiral Majorana fermion modes in a quantum anomalous Hall insulator-superconductor structure”, In Journal of Science, vol. 357, Issue 6348, Jul. 21, 2017, 8 Pages. [cited by applicant]
Zhang, et al., “Quantized Majorana Conductance”, INature, vol. 556, Issue 7699, Apr. 5, 2018, 14 Pages. [cited by applicant]
U.S. Appl. No. 16/796,671 / US-2021-0175408-A1 /U.S. Pat. No. 11,211,543, filed Feb. 20, 2020 / Jun. 10, 2021 / Dec. 28, 2021. [cited by applicant]
U.S. Appl. No. 17/561,330 / US-2022-0149262-A1, filed Dec. 23, 2021 / May 12, 2022. [cited by applicant]
U.S. Appl. No. 17/756,815 / US-2023-0012371-A1, filed Jun. 2, 2022 / Jan. 12, 2023. [cited by applicant]
Intention to Grant received for European Application No. 20830437.8, mailed on Nov. 15, 2023, 7 Pages. [cited by applicant]
Office Action Received for Korean Application No. 10-2022-7017934, mailed on Jan. 22, 2024, 7 pages (with English translation). [cited by applicant]
Office Action Received in Japanese Application No. 2022-533642, mailed on Nov. 14, 2023, 7pages (English Translation Provided). [cited by applicant]
Decision to Grant Received for Japan Application No. 2022-533642, mailed on May 7, 2024, 5 pages. [cited by applicant]
Office Action Received for Indian Application No. 202247030042, mailed on May 1, 2024, 6 pages. [cited by applicant]
Decision to Grant Received for European Application No. 20830437.8, mailed on Aug. 8, 2024, 2 pages. [cited by applicant]
Office Action Received for Chinese Application No. 201980102748.3, mailed on Aug. 7, 2024, 9 pages. (English Translation Provided). [cited by applicant]
Office Action Received for Japanese Application No. 2022-530890, mailed on Sep. 10, 2024, 10 pages (English Translation Provided). [cited by applicant]
Extended European Search Report and Written Opinion received for PCT Application No. 24160621.9, Jun. 21, 2024, 6 pages. [cited by applicant]
Notice of Allowance mailed on Jul. 31, 2024, in U.S. Appl. No. 17/561,330, 8 pages. [cited by applicant]
Communication pursuant to Article 94(3) received for PCT Application No. 24160621.9, Dec. 20, 2024, 05 pages. [cited by applicant]
Decision to grant a European patent pursuant to Article 97(1) Received for European Application No. 19817246.2, mailed on Jan. 5, 2024, 02 pages. [cited by applicant]
Duddles, et al., “Control of nitrogen incorporation in ZnTe: N grown by molecular-beam epitaxy using Ar dilution in a N plasma source”, In Journal of applied physics, vol. 76, Issue No. 9, Nov. 1, 1994, pp. 5214-5217. [cited by applicant]
Notice of Allowance mailed on Aug. 25, 2021, in U.S. Appl. No. 16/796,671, 09 pages. [cited by applicant]
Office Action Received for Korean Application No. 10-2022-7021272, mailed on Nov. 22, 2024, 08 pages. (English translation Provided). [cited by applicant]
Communication under Rule 71(3) Received in European Patent Application No. 19817248.8, mailed on Jan. 16, 2025, 08 pages. [cited by applicant]
Decision to grant for Japanese Application No. 2022530890,mailed on Jan. 28, 2025, 6 pages. (English Translation Provided). [cited by applicant]
First Office Action Received for Chinese Application No. 202080084194.1, mailed on Feb. 13, 2025, 16 Pages (English Translation Provided). [cited by applicant]
Extended European Search Report received for European Application No. 25169961.7, Mailed on Jul. 17, 2025, 10 pages. [cited by applicant]