Treatment liquid and substrate treatment method
A treatment liquid for a semiconductor device contains water, a removing agent, and a copolymer. The copolymer has a first repeating unit having at least one group selected from a primary amino group, a secondary amino group, a tertiary amino group, and a quaternary ammonium cation, and a second repeating unit different from the first repeating unit. A substrate treatment method using the treatment liquid is also provided.
1. A treatment liquid for a semiconductor device, comprising:
water;
a removing agent; and
a resin,
wherein the resin has a first repeating unit having at least one selected from the group consisting of a primary amino group, a secondary amino group, a tertiary amino group, and a quaternary ammonium cation, and a second repeating unit different from the first repeating unit, and
the second repeating unit comprises a sulfonyl group, or a repeating unit represented by Formula (2a),
in Formula (2a), A 21 , A 22 , and A 23 each independently represent a hydrogen atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or -L 2 -X 21 ,
where X 21 represents a hydrophilic group selected from the group consisting of a carboxy group, an alkoxy group, a polyoxyalkylene group, an amide group, a carbamoyl group, a nitrile group, a sulfonamide group, and a sulfamoyl group,
L 2 represents a divalent linking group, and
in a case where two or more X 21 's or two or more L 2 's are present, the two or more X 21 's or two or more L 2 's may be the same or different from each other.
2. The treatment liquid according to claim 1 ,
wherein the first repeating unit has the primary amino group.
3. The treatment liquid according to claim 1 ,
wherein the resin has at least one selected from the group consisting of skeleton structures represented by Formulae (P-3), (P-7), (P-13) and (P-14),
in Formulae (P-3), (P-7), (P-13) and (P-14), a ratio m:n of the number of moles m of the first repeating unit to the number of moles n of the second repeating unit is 1:20 to 20:1, and
in Formula (P-7), 1 represents an integer of 1 to 30.
4. The treatment liquid according to claim 1 ,
wherein a ratio men of the number of moles m of the first repeating unit to the number of moles n of the second repeating unit is 5:1 to 1:5, where the first repeating unit and the second repeating unit are contained in the resin.
5. The treatment liquid according to claim 1 ,
wherein the resin has a weight-average molecular weight of 1,000 to 150,000.
6. The treatment liquid according to claim 1 ,
wherein a content of the resin is 10 to 10,000 ppm by mass with respect to a total mass of the treatment liquid.
7. The treatment liquid according to claim 1 ,
wherein the removing agent comprises at least one selected from the group consisting of hydrofluoric acid, ammonium fluoride, tetramethylammonium fluoride, a hydroxylamine compound, ammonium hydroxide, a water-soluble amine, a quaternary ammonium compound, sulfuric acid, hydrochloric acid, phosphoric acid, carboxylic acid, sulfonic acid, and phosphonic acid.
8. The treatment liquid according to claim 1 ,
wherein the removing agent comprises a water-soluble amine and at least one organic acid selected from the group consisting of carboxylic acid, sulfonic acid, and phosphonic acid.
9. The treatment liquid according to claim 8 ,
wherein the water-soluble amine is at least one selected from the group consisting of methylamine, ethylamine, propylamine, butylamine, pentylamine, methoxyethylamine, methoxypropylamine, 2-amino-2-methyl-1-propanol, and allylamine, and
the organic acid is at least one selected from the group consisting of acetic acid, propionic acid, methanesulfonic acid, ethanesulfonic acid, allylglycine, maleic acid, citraconic acid, fumaric acid, and itaconic acid.
10. The treatment liquid according to claim 1 , further comprising an oxidizing agent.
11. The treatment liquid according to claim 10 ,
wherein the oxidizing agent is at least one selected from the group consisting of hydrogen peroxide, nitric acid, peracetic acid, periodic acid, perchloric acid, chloric acid, hypochlorous acid, a cerium ammonium nitrate salt, iron nitrate, and ammonium persulfate.
12. The treatment liquid according to claim 1 , further comprising a corrosion inhibitor.
13. The treatment liquid according to claim 12 ,
wherein the corrosion inhibitor comprises at least one compound selected from the group consisting of a compound represented by Formula (A), a compound represented by Formula (B), a compound represented by Formula (C), and a substituted or unsubstituted tetrazole,
in Formula (A), R 1A to R 5A each independently represent a hydrogen atom, a substituted or unsubstituted hydrocarbon group, a hydroxyl group, a carboxy group, or a substituted or unsubstituted amino group, provided that a structure of Formula (A) comprises at least one group selected from the hydroxyl group, the carboxy group, or the substituted or unsubstituted amino group,
in Formula (B), R 1B to R 4B each independently represent a hydrogen atom or a substituted or unsubstituted hydrocarbon group, and
in Formula (C), R 1C , R 2C , and R N each independently represent a hydrogen atom or a substituted or unsubstituted hydrocarbon group, where R 1C and R 2C may be bonded to each other to form a ring.
14. The treatment liquid according to claim 1 , further comprising a surfactant.
15. The treatment liquid according to claim 14 ,
wherein the surfactant is at least one selected from the group consisting of a phosphoric acid ester-based surfactant, a carboxylic acid-based surfactant, a sulfonic acid-based surfactant, and a sulfuric acid ester-based surfactant.
16. The treatment liquid according to claim 15 ,
wherein the phosphoric acid ester-based surfactant is at least one selected from the group consisting of an alkyl phosphoric acid ester, a mono- or polyoxyalkyl ether phosphoric acid ester, and a salt thereof.
17. The treatment liquid according to claim 15 ,
wherein the carboxylic acid-based surfactant is a polyoxyalkylene alkyl ether carboxylic acid.
18. The treatment liquid according to claim 15 ,
wherein the sulfonic acid-based surfactant is an alkyl diphenyl ether disulfonic acid, and
the sulfuric acid ester-based surfactant is a polyoxyalkylene ether sulfuric acid ester or a salt thereof.
19. The treatment liquid according to claim 1 , further comprising an organic solvent.
20. The treatment liquid according to claim 1 , further comprising an antifoaming agent.
21. The treatment liquid according to claim 20 ,
wherein the antifoaming agent is a silicone-based antifoaming agent.
22. The treatment liquid according to claim 1 ,
wherein the treatment liquid is a treatment liquid for a substrate having a metal-containing substance, and
the metal-containing substance contains at least one component selected from the group consisting of copper, cobalt, a cobalt alloy, tungsten, a tungsten alloy, ruthenium, a ruthenium alloy, tantalum, a tantalum alloy, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium aluminum, titanium, titanium nitride, titanium oxide, zirconium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, and a yttrium alloy.
23. The treatment liquid according to claim 1 ,
wherein the treatment liquid is used as a washing solution for removing etching residues, a solution for removing a resist film used in a pattern formation, a washing solution for removing residues from a substrate after chemical mechanical polishing, or an etchant.
24. A substrate treatment method comprising a step A of removing a metal-containing substance on a substrate by using the treatment liquid according to claim 1 .
25. The substrate treatment method according to claim 24 , further comprising a step B, after the step A, of subjecting the substrate obtained in the step A to a rinsing treatment by using a rinsing liquid.
26. A substrate treatment method for treating a substrate having a metal-containing layer on a surface, the substrate treatment method comprising:
a step P of carrying out a liquid treatment of bringing the surface of the substrate into contact with
a chemical liquid selected from the group consisting of water, hydrogen peroxide water, a mixed aqueous solution of ammonia water and hydrogen peroxide water, a mixed aqueous solution of hydrofluoric acid and hydrogen peroxide water, a mixed aqueous solution of sulfuric acid and hydrogen peroxide water, a mixed aqueous solution of hydrochloric acid and hydrogen peroxide water, oxygen-dissolved water, and ozone-dissolved water, an ozone treatment of bringing an ozone gas into contact with the substrate, a heating treatment of the substrate in an oxygen atmosphere, or a plasma treatment of the substrate using an oxygen gas,
and oxidizing a surface layer of the metal-containing layer to form a metal oxide layer; and
a step Q of bringing the treatment liquid according to claim 1 into contact with a surface of the metal oxide layer formed in the step P to remove the metal oxide layer.
27. The treatment method according to claim 26 ,
wherein the step P and the step Q are repeatedly carried out.
28. The treatment method according to claim 26 ,
wherein the metal-containing layer contains at least one selected from the group consisting of cobalt, copper, tungsten, titanium, and aluminum.