Treatment liquid and method for washing substrate
A treatment liquid is a treatment liquid for a semiconductor device containing an oxidizing agent, a corrosion inhibitor, water, and Fe, in which the content ratio of the Fe to the oxidizing agent is 10 −10 to 10 −4 in terms of mass ratio.
1. A treatment liquid for a semiconductor device, comprising:
an oxidizing agent;
a corrosion inhibitor;
water; and
Fe,
wherein the content ratio of the Fe to the oxidizing agent is 10 −10 to 10 −4 in terms of mass ratio.
2. The treatment liquid according to claim 1 ,
wherein the oxidizing agent is hydrogen peroxide.
3. The treatment liquid according to claim 1 ,
wherein the content ratio of the Fe to the corrosion inhibitor is 10 −10 to 10 −4 in terms of mass ratio.
4. The treatment liquid according to claim 1 ,
wherein the content of the Fe is 0.1 ppt by mass to 10 ppb by mass with respect to the total mass of the treatment liquid.
5. The treatment liquid according to claim 1 , further comprising an organic solvent.
6. The treatment liquid according to claim 5 ,
wherein the content of the water is 20% to 98% by mass, and
the content of the organic solvent is 1% to 40% by mass,
with respect to the total mass of the treatment liquid.
7. The treatment liquid according to claim 5 ,
wherein the content of the water is 1% to 40% by mass, and
the content of the organic solvent is 20% to 98% by mass,
with respect to the total mass of the treatment liquid.
8. The treatment liquid according to claim 1 , further comprising a polyfunctional organic acid.
9. The treatment liquid according to claim 8 ,
wherein the content ratio of the Fe to the polyfunctional organic acid is 10 −10 to 10 −4 in terms of mass ratio.
10. The treatment liquid according to claim 8 ,
wherein the concentration of a complex salt formed by complexing the polyfunctional organic acid with the Fe ion in the treatment liquid is 10 ppt by mass to 5 ppb by mass.
11. The treatment liquid according to claim 1 , further comprising a halide.
12. The treatment liquid according to claim 1 ,
wherein the pH of the treatment liquid is −3.0 to 5.0.
13. The treatment liquid according to claim 1 ,
wherein in the case where the viscosity of the treatment liquid at 25° C. is measured using a rotational viscometer, the ratio of the viscosity of the treatment liquid at a rotation speed of 100 rpm to the viscosity of the treatment liquid at a rotation speed of 1,000 rpm is 1 to 20.
14. The treatment liquid according to claim 1 ,
wherein the semiconductor device has a substrate comprising a metal layer including Co, and
the treatment liquid is used in a treatment for the metal layer.
15. The treatment liquid according to claim 1 ,
wherein the semiconductor device has a substrate comprising a metal layer including W, and
the treatment liquid is used in a treatment for the metal layer.
16. The treatment liquid according to claim 1 ,
wherein the semiconductor device has a substrate comprising an insulating layer including any one selected from SiOx, SiOC, or SiN, and
the treatment liquid is used in a treatment for the insulating layer.
17. The treatment liquid according to claim 1 ,
wherein the corrosion inhibitor includes at least one compound selected from a triazole represented by Formula (A), a boronic acid represented by Formula (B), a metal chloride represented by Formula (C), a substituted or unsubstituted tetrazole, or a surfactant,
in Formula (A), R 1C , R 2C , and R N each independently represent a hydrogen atom, or a substituted or unsubstituted hydrocarbon group, and R 1C and R 2C may be bonded to each other to form a ring;
R—B(OH) 2 Formula (B)
in Formula (B), R represents a hydroxyl group, or a substituted or unsubstituted hydrocarbon group; and
M(Cl) x Formula (C)
in Formula (C), M represents a cerium atom or a metal atom selected from Group 4, and x represents the valence of M.