Plasma generating device, substrate processing apparatus, and method of manufacturing semiconductor device

1. A plasma generating device, comprising:

a first rod-shaped electrode and a second rod-shaped electrode connected to a high-frequency power supply;

a third rod-shaped electrode installed between the first rod-shaped electrode and the second rod-shaped electrode, and that is grounded;

a gas supplier configured to supply gas; and

at least one buffer structure that forms a buffer chamber configured to accommodate the first rod-shaped electrode, the second rod-shaped electrode, the third rod-shaped electrode, and the gas supplier,

wherein high-frequency power is applied to the first rod-shaped electrode from the high-frequency power supply to convert gas into plasma in a plasma generation region between the first rod-shaped electrode and the third rod-shaped electrode, and high-frequency power is applied to the second rod-shaped electrode from the high-frequency power supply to convert gas into plasma in a plasma generation region between the second rod-shaped electrode and the third rod-shaped electrode, and

wherein gas supply ports that supply gas into a process chamber are located between the first rod-shaped electrode and the third rod-shaped electrode and between the second rod-shaped electrode and the third rod-shaped electrode, on a side wall surface of the buffer structure.

2. The device of claim 1 , wherein the side wall surface of the buffer structure is formed to face a side surface of a substrate.

3. The device of claim 1 , wherein the gas supply ports are opened to face a center of a substrate.

4. A substrate processing apparatus, comprising:

a process chamber in which a substrate is processed;

a gas supplier configured to supply gas into the process chamber; and

a plasma generating device configured to activate the gas by converting the gas into plasma; and

an exhaust system configured to evacuate an interior of the process chamber,

wherein the plasma generating device includes:

a first rod-shaped electrode and a second rod-shaped electrode connected to a high-frequency power supply;

a third rod-shaped electrode installed between the first rod-shaped electrode and the second rod-shaped electrode, and that is grounded; and

at least one buffer structure that forms a buffer chamber configured to accommodate the first rod-shaped electrode, the second rod-shaped electrode, the third rod-shaped electrode, and the gas supplier,

wherein high-frequency power is applied to the first rod-shaped electrode from the high-frequency power supply to convert the gas into plasma in a plasma generation region between the first rod-shaped electrode and the third rod-shaped electrode, and high-frequency power is applied to the second rod-shaped electrode from the high-frequency power supply to convert the gas into plasma in a plasma generation region between the second rod-shaped electrode and the third rod-shaped electrode, and

wherein gas supply ports that supply gas into the process chamber are located between the first rod-shaped electrode and the third rod-shaped electrode and between the second rod-shaped electrode and the third rod-shaped electrode, on a side wall surface of the buffer structure.

5. The apparatus of claim 4 , wherein the side wall surface of the buffer structure is formed to face a side surface of the substrate.

6. The apparatus of claim 4 , wherein the gas supply ports are opened to face a center of the substrate.

7. The apparatus of claim 4 , further comprising:

a controller configured to control the high-frequency power supply,

wherein the controller controls the high-frequency power supply by monitoring an impedance of the plasma generating device.

8. The apparatus of claim 4 , wherein the at least one buffer structure includes a plurality of buffer structures, and different reaction gases are supplied to the plurality of buffer structures respectively.

9. The apparatus of claim 4 , wherein the at least one buffer structure includes a plurality of buffer structures, and the same reaction gas is supplied to the plurality of buffer structures.

10. The apparatus of claim 4 , wherein the at least one buffer structure includes a plurality of buffer structures, and the plurality of buffer structures are installed, with the exhaust system interposed between the plurality of buffer structures, in a line-symmetrical manner with respect to a line passing through the exhaust system and a center of the process chamber.

11. The apparatus of claim 4 , wherein the gas supplier includes a gas supply hole that supplies gas into the buffer chamber, and

wherein the buffer structure includes a wall surface formed of an arc-shape and a wall surface formed in a radial direction, and the gas supply hole is opened to face the wall surface of the buffer structure that is formed in the radial direction.

12. The apparatus of claim 11 , wherein the first rod-shaped electrode or the second rod-shaped electrode is installed adjacent to the wall surface formed in the radial direction.

13. The apparatus of claim 4 , wherein the gas supply ports include:

a first gas supply port that supplies the plasma-converted gas, which is generated in the plasma generation region between the first rod-shaped electrode and the third rod-shaped electrode, to the process chamber; and

a second gas supply port that supplies the plasma-converted gas, which is generated in the plasma generation region between the second rod-shaped electrode and the third rod-shaped electrode, to the process chamber.

14. The apparatus of claim 4 , wherein the buffer structure is made of insulating material.