Etching method
There is provided an etching method which includes: supplying an etching gas to a workpiece including a first SiGe-based material and a second SiGe-based material having different Ge concentrations; and selectively etching the first SiGe-based material and the second SiGe-based material with respect to the other using a difference in incubation time until the first SiGe-based material and the second SiGe-based material begin to be etched by the etching gas.
1. An etching method, comprising:
supplying an etching gas to a workpiece including a first SiGe-based material having a Ge concentration of 20 to 50 at % and a second SiGe-based material having a Ge concentration of 5 to 15 at %; and
selectively etching one of the first SiGe-based material and the second SiGe-based material with respect to the other for a time during which one of the first SiGe-based material and the second SiGe-based material is etched while the other is not etched,
wherein temperature during the etching is 100 degrees C. or greater.
2. The method of claim 1 , wherein the temperature during the etching falls within a range of 100 to 125 degrees C.
3. The method of claim 1 , wherein the etching gas includes a fluorine-containing gas.
4. The method of claim 3 , wherein the fluorine-containing gas is at least one selected from a group consisting of a ClF 3 gas, a F 2 gas and an IFS gas.
5. The method of claim 3 , wherein the first SiGe-based material is a first film, and the second SiGe-based material is a second film,
the method comprising:
selectively etching the first film with respect to the second film using the fluorine-containing gas as the etching gas.
6. The method of claim 5 , wherein the workpiece is configured by stacking the first film and the second film one above another on a substrate at least once.
7. The method of claim 5 , wherein the workpiece includes a structure portion having the first film as an etching target, an SiGe film not to be etched which is provided outside the structure portion and has a Ge concentration equivalent to the Ge concentration of the first film, and the second film provided as a protective layer of the SiGe film not to be etched between the structure portion and the SiGe film not to be etched, which are formed on a substrate.
8. The method of claim 3 , wherein the first SiGe-based material is a first film, and the second SiGe-based material is a second film,
the method comprising:
selectively etching the second film with respect to the first film using the fluorine-containing gas and an NH 3 gas as the etching gas.
9. The method of claim 1 , wherein a pressure during the etching falls within a range of 1.33 to 133 Pa.
10. The method of claim 5 , wherein the first film has a Ge concentration of 25 to 35 at %.
11. An etching method, comprising:
repeating, a multiple number of times, an etching process of supplying an etching gas to a workpiece including a first SiGe-based material having a Ge concentration of 20 to 50 at % and a second SiGe-based material having a Ge concentration of 5 to 15 at % for an etching time during which one of the first SiGe-based material and the second SiGe-based material is etched while the other is not etched, and a purging process of purging a process space, to selectively etch one of the first SiGe-based material and the second SiGe-based material with respect to the other,
wherein temperature during the etching is 100 degrees C. or greater.
12. The method of claim 11 , wherein a period of time required for the etching process is 1 to 10 seconds per process; and a period of time required for the purging process is 5 to 30 seconds per process.