Structured pedestal for MTJ containing devices
View Patent ↗A magnetic tunnel junction (MTJ) containing device is provided that includes an undercut conductive pedestal structure having a concave sidewall positioned between a bottom electrode and a MTJ pillar. The geometric nature of such a conductive pedestal structure makes the pedestal structure unlikely to be resputtered and deposited on a sidewall of the MTJ pillar, especially the sidewall of the tunnel barrier of the MTJ pillar. Thus, electrical shorts caused by depositing resputtered conductive metal particles on the sidewall of the tunnel barrier of the MTJ pillar are substantially reduced.
1. A magnetic tunnel junction (MTJ) containing device comprising:
a conductive pedestal structure having an outermost sidewall, as measured from a topmost surface of the conductive pedestal structure to the bottommost surface of the conductive pedestal structure, that is entirely concave, wherein the conductive pedestal structure is located on a bottom electrode;
a magnetic tunnel junction (MTJ) pillar located on the conductive pedestal structure;
a top electrode located on the MTJ pillar; and
a passivation material spacer located on the sidewall of each of the top electrode and the MTJ pillar and contacting the topmost surface of the conductive pedestal structure.
2. The MTJ containing device of claim 1 , wherein the outermost sidewall of the conductive pedestal structure is located directly beneath the passivation material spacer.
3. The MTJ containing device of claim 1 , wherein the conductive pedestal structure has a hour-glass shape.
4. The MTJ containing device of claim 1 , wherein the bottom electrode is located on a surface of an electrically conductive structure, and the electrically conductive structure is embedded in an interconnect dielectric material layer.
5. The MTJ containing device of claim 1 , wherein the conductive pedestal structure is located on a non-recessed surface of the bottom electrode, and wherein a dielectric capping layer is located laterally adjacent to the bottom electrode.
6. The MTJ containing device of claim 1 , wherein the MTJ pillar comprises a magnetic reference material, a tunnel barrier material, and a magnetic free material, wherein the magnetic reference material forms an interface with the conductive pedestal structure.
7. The MTJ containing device of claim 1 , wherein the conductive pedestal structure is composed of a conductive material having a lower atomic weight than a conductive material that provides the bottom electrode.
8. The MTJ containing device of claim 1 , wherein no resputtered conductive metal particles are present on a sidewall of the MTJ pillar.
9. The MTJ containing device of claim 1 , wherein the conductive pedestal structure, the MTJ pillar, and the top electrode are components of a memory device or a sensor.
10. A magnetic tunnel junction (MTJ) containing device comprising:
a conductive pedestal structure having an outermost sidewall, as measured from a topmost surface of the conductive pedestal structure to the bottommost surface of the conductive pedestal structure, that is entirely concave, wherein the conductive pedestal structure is located on a bottom electrode;
a magnetic tunnel junction (MTJ) pillar located on the conductive pedestal structure; and
a top electrode located on the MTJ pillar, wherein the bottom electrode is located on a surface of an electrically conductive structure, and the electrically conductive structure is embedded in an interconnect dielectric material layer.
11. A magnetic tunnel junction (MTJ) containing device comprising:
conductive pedestal structure having an outermost sidewall, as measured from a topmost surface of the conductive pedestal structure to the bottommost surface of the conductive pedestal structure, that is entirely concave, wherein the conductive pedestal structure is located on a non-recessed surface of a bottom electrode;
a magnetic tunnel junction (MTJ) pillar located on the conductive pedestal structure;
a top electrode located on the MTJ pillar; and
a dielectric capping layer located laterally adjacent to the bottom electrode.