Power semiconductor module device
A power semiconductor module device includes: a plurality of semiconductor elements that are arranged at intervals and flush with each other on a plane; an insulating support that fixes the semiconductor elements; a first thick-film plating layer that is formed as a first-surface-side electrode that electrically connects the semiconductor elements to each other on at least one surface of a front surface side and a rear surface side. The first thick-film plating layer supports the semiconductor elements from at least one of an upper direction and a lower direction.
1. A power semiconductor module device comprising:
a semiconductor element comprising a first electrode on a first surface of the semiconductor element;
an insulating support;
a first conductive wiring metal plate that comprises a first edge portion; and
a second conductive wiring metal plate;
wherein:
the insulating support supports the semiconductor element,
the insulating support supports the first conductive wiring metal plate on a first surface of the insulating support,
the first conducting wiring metal plate is connected at the first edge portion to the first electrode, whereby supporting the semiconductor element from a first direction,
the first edge portion is a wire or a ball,
the second conductive wiring metal plate is provided on a second surface opposite to the first surface of the insulating support,
the second conductive wiring metal plate comprises a second edge portion,
the semiconductor element comprises a second electrode on a second surface opposite to the first surface of the semiconductor element,
the second conducting wiring metal plate is connected at the second edge portion to the second electrode, whereby supporting the semiconductor element from a second direction opposite to the first direction, and
the second edge portion is a wire or a ball.
2. The power semiconductor module device according to claim 1 , wherein
a heat spreader that diffuses heat is formed on a surface of the first conductive wiring metal plate by plating.
3. A power semiconductor module device comprising:
a semiconductor element comprising a first electrode on a first surface of the semiconductor element;
an insulating support;
a first conductive wiring metal plate that comprises a first edge portion; and
a plating layer;
wherein:
the insulating support supports the semiconductor element, the insulating support supports the first conductive wiring metal plate on a first surface of the insulating support,
the first conducting wiring metal plate is connected at the first edge portion to the first electrode, whereby supporting the semiconductor element from a first direction,
the first edge portion is a wire or a ball, and
the plating layer is provided by plating on a second surface opposite to the first surface of the semiconductor element that electrically connects a second electrode provided on a second surface opposite to the first surface of the semiconductor element whereby supporting the semiconductor element.
4. The power semiconductor module device according to claim 3 , wherein
a heat spreader that diffuses heat is formed on a surface of the first conductive wiring metal plate by plating.
5. A power semiconductor module device comprising:
a semiconductor element comprising a first electrode on a first surface of the semiconductor element;
an insulating support;
a first conductive wiring metal plate that comprises a first edge portion; and
a second conductive wiring metal plate;
wherein:
the insulating support supports the first semiconductor element,
the insulating support supports the first conductive wiring metal plate on a first surface of the insulating support,
the first conducting wiring metal plate is connected at the first edge portion to the first electrode, whereby supporting the first semiconductor element from a first direction,
the first edge portion is in a chevron, a trapezoidal, an arc or a wavy shape,
the second conductive wiring metal plate is provided on a second surface opposite to the first surface of the insulating support, the second conductive wiring metal plate comprises a second edge portion,
the semiconductor element comprises a second electrode on a second surface opposite to the first surface of the semiconductor element,
the second conducting wiring metal plate is connected at the second edge portion to the second electrode, whereby supporting the semiconductor element from a second direction opposite to the first direction, and
the second edge portion is in a chevron, a trapezoidal, an arc or a wavy shape.
6. The power semiconductor module device according to claim 5 , wherein
a heat spreader that diffuses heat is formed on a surface of the first conductive wiring metal plate by plating.
7. A power semiconductor module device comprising:
a semiconductor element comprising a first electrode on a first surface of the semiconductor element;
an insulating support;
a first conductive wiring metal plate that comprises a first edge portion; and
a plating layer;
wherein:
the insulating support supports the first semiconductor element, the insulating support supports the first conductive wiring metal plate on a first surface of the insulating support,
the first conducting wiring metal plate is connected at the first edge portion to the first electrode, whereby supporting the first semiconductor element from a first direction,
the first edge portion is in a chevron, a trapezoidal, an arc or a wavy shape, and
the plating layer is provided by plating on a second surface opposite to the first surface of the semiconductor element that electrically connects a second electrode provided on a second surface opposite to the first surface of the semiconductor element whereby supporting the semiconductor element.
8. The power semiconductor module device according to claim 7 , wherein
a heat spreader that diffuses heat is formed on a surface of the first conductive wiring metal plate by plating.