Tight pitch wirings and capacitor(s)
The present disclosure relates to semiconductor structures and, more particularly, to tight pitch wirings and capacitors and methods of manufacture. The structure includes: a capacitor including: a bottom plate of a first conductive material; an insulator material on the bottom plate; and a top plate of a second conductive material on the insulator material; and a plurality of wirings on a same level as the bottom plate and composed of the second conductive material.
1. A structure comprising:
a capacitor comprising:
a bottom plate of a first conductive material;
an insulator layer on the bottom plate; and
a top plate of a second conductive material on the insulator layer; and
a plurality of wirings on a same level as the bottom plate, composed of a same continuous stack as the top plate of the capacitor, wherein both the bottom plate and the plurality of wirings contact a same underlying insulator material.
2. The structure of claim 1 , wherein the plurality of wirings and the bottom plate are spaced apart by an interlevel dielectric material.
3. The structure of claim 2 , wherein the plurality of wirings and the bottom plate are spaced apart by about 30 microns.
4. The structure of claim 1 , wherein the bottom plate and the plurality of wirings have a different height.
5. The structure of claim 1 , wherein the top plate and the plurality of wirings have a same height.
6. The structure of claim 5 , wherein the top plate and the plurality of wirings are a same continuous stack formed at different heights of the structure.
7. The structure of claim 5 , further comprising at least one sidewall spacer on a sidewall of the bottom plate and interlevel dielectric material separating the at least one sidewall spacer from the plurality of wirings.
8. The structure of claim 7 , wherein the at least one sidewall spacer, the top plate and the plurality of wirings are of a same material.
9. The structure of claim 8 , wherein the same material is AlCu.
10. The structure of claim 1 , wherein the first conductive material is different than the second conductive material, and the second conductive material is AlCu.
11. A structure comprises:
a metal insulator metal (MIM) capacitor comprising a bottom plate, an insulator material on the bottom plate, and a top plate on the insulator material;
a plurality of wirings on a same underlying insulator material as the bottom plate and composed of a same continuous stack as the top plate of the MIM capacitor, wherein the bottom plate and the plurality of wirings contact the same underlying insulator material;
interlevel dielectric material separating the plurality of wires from one another and from the bottom plate of the MIM capacitor;
interconnect structures extending within the interlevel dielectric material and contacting, from a top side, the top plate and the bottom plate of the MIM capacitor and at least one of the plurality of wirings; and
one or more metallized vias contacting one of the plurality of wirings from a bottom side.
12. The structure of claim 11 , wherein the top plate and the plurality of wirings are formed at different heights and of a same conductive material.
13. The structure of claim 12 , wherein the plurality of wirings are a same thickness as the top plate.
14. The structure of claim 12 , wherein the plurality of wirings are a different thickness than the bottom plate and formed of a different conductive material.
15. The structure of claim 12 , wherein the plurality of wirings and the bottom plate are spaced apart.
16. The structure of claim 12 , further comprising at least one sidewall spacer on the bottom plate.
17. The structure of claim 16 , wherein the at least one sidewall spacer, the top plate and the plurality of wirings are of a same material.
18. The structure of claim 17 , wherein the same material is AlCu.
19. The structure of claim 12 , wherein the bottom plate and the top plate are composed of different conductive materials.
20. The structure of claim 1 , further comprising:
interlevel dielectric material separating the plurality of wires from one another and from the bottom plate;
interconnect structures extending within the interlevel dielectric material and contacting, from a top side, the top plate, the bottom plate and at least one of the plurality of wirings; and
one or more metallized vias contacting at least one of the plurality of wirings from a bottom side.