Methods of fabricating dual threshold voltage devices

1. An annular device, comprising:

a cylindrical pillar, comprising:

a vertical cylindrical core; and

a plurality of layers that surround the vertical cylindrical core in succession, the plurality of layers including a first layer, a second layer, a third layer, and a fourth layer,

wherein:

the core, the first layer, and the second layer correspond to a first transistor including a first input terminal, wherein the first transistor is configured to have a first threshold voltage having a first magnitude; and

the second layer, the third layer, and the fourth layer correspond to a second transistor including a second input terminal, wherein the second transistor is configured to have a second threshold voltage having a second magnitude distinct from the first magnitude.

2. The annular device of claim 1 , wherein:

the second layer is a common channel having a channel source and a channel drain;

the first input terminal is coupled to the core, the first input terminal being configured to receive a first voltage for the first transistor; and

the second input terminal is coupled to the fourth layer, the second input terminal being configured to receive a second voltage for the second transistor.

3. The annular device of claim 2 , further comprising a magnetic tunnel junction (MTJ) coupled to the channel drain.

4. The annular device of claim 2 , further comprising a cylindrical source contact coupled to the channel source.

5. The annular device of claim 3 , wherein:

the MTJ includes a storage layer, a spacer layer, and a reference layer; and

the reference layer of the MTJ is coupled to the channel drain.

6. The annular device of claim 1 , wherein:

the first layer is a first dielectric layer;

the third layer is a third dielectric layer; and

the first threshold voltage and the second threshold voltage are based on respective thicknesses for the first dielectric layer and the third dielectric layer.

7. The annular device of claim 1 , wherein the first threshold voltage and the second threshold voltage are selected by changing one or more properties of the annular device selected from the group consisting of: a dopant of the annular device, a material composition of the first input terminal, a work function of the first input terminal, a material composition of the second input terminal, and a work function of the second input terminal.

8. The annular device of claim 1 , wherein:

the core is conductive;

the first layer is a first dielectric layer that surrounds the core;

the second layer surrounds the first dielectric layer and is composed of a semiconductor material;

the third layer is a third dielectric layer that surrounds the second layer; and

the fourth layer is conductive and surrounds the third dielectric layer.

9. The annular device of claim 1 , wherein the fourth layer is composed of a polycide.

10. The annular device of claim 1 , wherein the core is composed of a Tantalum material.

11. The annular device of claim 1 , wherein the second layer has a height that is distinct from a height of the core.

12. The annular device of claim 1 , wherein the second layer has a height that is distinct from a respective height of the third layer and the fourth layer.

13. The annular device of claim 1 , wherein the first input terminal and the second input terminal extend radially outward from the annular device.

14. The annular device of claim 1 , wherein the first input terminal is aligned with the second input terminal.

15. An annular device, comprising:

a core; and

a plurality of layers that surround the core in succession, the plurality of layers including a first layer, a second layer, a third layer, and a fourth layer, wherein:

the core, the first layer, and the second layer correspond to a first transistor including having a first input terminal; and

the second layer, the third layer, and the fourth layer correspond to a second transistor including having a second input terminal; and

the second layer is a common channel having a channel source and a channel drain;

the first input terminal is coupled to the core, the first input terminal being configured to receive a first voltage for the first transistor; and

the second input terminal is coupled to the fourth layer, the second input terminal being configured to receive a second voltage for the second transistor.