Method to improve profile control during selective etching of silicon nitride spacers
Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula C x H y F z where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.
1. A cyclic etch method for forming a vertically straight SiN gate spacer, the method comprising the steps of:
i) exposing a SiN layer covering a gate stack on a silicon-containing substrate in a reaction chamber to a plasma of a hydrofluorocarbon (HFC) selected from the group consisting of C 2 H 5 F and C 3 H 7 F to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer;
ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and
iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the gate stack.
2. The cyclic etch method of claim 1 , further comprising the steps of, after the step of i),
pumping the reaction chamber to a vacuum;
purging the reaction chamber with N 2 ;
pumping the reaction chamber to the vacuum; and
introducing the inert gas into the reaction chamber to generate the plasma of the inert gas.
3. The cyclic etch method of claim 2 , further comprising the steps of, after the step of ii),
pumping the reaction chamber to a vacuum;
purging the reaction chamber with N 2 ;
pumping the reaction chamber to the vacuum; and
introducing C 2 H 5 F or C 3 H 7 F gas into the reaction chamber to generate the plasma of C 2 H 5 F or C 3 H 7 F.
4. The cyclic etch method of claim 3 , wherein in the repeating step less than 10% of the thickness (a 2 ) of the SiN layer on the sidewall of the gate stack is removed.
5. The cyclic etch method of claim 3 , wherein the inert gas is Ar.
6. The cyclic etch method of claim 1 , wherein C 2 H 5 F and C 3 H 7 F selectively etch the SiN layer over the gate stack.
7. The cyclic etch method of claim 1 , wherein a footing (d) formed at each corner between the vertically straight SiN spacer and the substrate is 6.0 nm or less in size.
8. The cyclic etch method of claim 1 , wherein no fluoride residuals are left on the vertically straight SiN spacer and the etch front.
9. The cyclic etch method of claim 1 , wherein the step of removing the polymer layer in the step ii) is an ion bombardment process.
10. A cyclic etch method, the method comprising the steps of:
i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula C x H y F z where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC;
ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and
iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.
11. The cyclic etch method of claim 10 , further comprising the steps of, after the step of i),
pumping the reaction chamber to a vacuum;
purging the reaction chamber with N 2 ;
pumping the reaction chamber to the vacuum; and
introducing the inert gas into the reaction chamber to generate the plasma of the inert gas.
12. The cyclic etch method of claim 11 , further comprising the steps of, after the step of ii),
pumping the reaction chamber to a vacuum;
purging the reaction chamber with N 2 ;
pumping the reaction chamber to the vacuum; and
introducing the HFC into the reaction chamber to generate the plasma of the HFC.
13. The cyclic etch method of claim 10 , wherein in the repeating step less than 10% of the thickness (a 2 ) of the SiN layer on the sidewall of the structure is removed.
14. The cyclic etch method of claim 10 , wherein the inert gas is selected from N 2 , Ar, Kr or Xe.
15. The cyclic etch method of claim 10 , wherein the HFC is C 2 H 5 F.
16. The cyclic etch method of claim 10 , wherein the HFC is C 3 H 7 F.
17. The cyclic etch method of claim 10 , wherein the HFC selectively etches the SiN layer over the structure.
18. The cyclic etch method of claim 10 , wherein a footing (d) formed at each corner between the vertically straight SiN spacer and the substrate is 6.0 nm or less in size.
19. The cyclic etch method of claim 10 , wherein no fluoride residuals are left on the vertically straight SiN spacer and the etch front.
20. The cyclic etch method of claim 10 , wherein the step of removing the polymer layer in the step ii) is an ion bombardment process.